scholarly journals X-ray Absorption Study of Pulsed Laser Deposited Boron Nitride Films

1993 ◽  
Vol 327 ◽  
Author(s):  
A. Chaiken ◽  
L.J. Terminello ◽  
J. Wong ◽  
G.L. Doll ◽  
T. Sato
Keyword(s):  
Single Phase ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Absorption Study ◽  
Secondary Phases ◽  
X Ray ◽  
Si Substrates ◽  
X Ray Absorption ◽  
Boron Nitride Films

AbstractB and N K-edge x-ray absorption spectroscopy measurements have been performed on three BN thin films grown on Si substrates using ion-assisted pulsed laser deposition. Comparison of the films’ spectra to those of several single-phase BN powder standards shows that the films consist primarily of sp2 bonds. Other features in the films’ spectra suggest the presence of secondary phases, possibly cubic or rhombohedral BN. Films grown at higher deposition rates and higher ion-beam voltages are found to be more disordered, in agreement with previous work.

Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

X-ray, absorption and photocurrent properties of thin-film GaAs on glass formed by pulsed-laser deposition

2004 ◽  
Vol 19 (11) ◽  
pp. 1322-1324 ◽  
Author(s):  
A Erlacher ◽  
M Ambrico ◽  
V Capozzi ◽  
V Augelli ◽  
H Jaeger ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
X Ray Absorption

Fabricating Two-Dimensional Metal Nanocrystal Arrays Using Pulsed-Laser Deposition and Focused Ion-Beam Technologies

2000 ◽  
Vol 636 ◽  
Author(s):  
Richard F. Haglund ◽  
Robert A. Weller ◽  
Cynthia E. Heiner ◽  
Matthew D. McMahon ◽  
Robert H. Magruder ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Silicon Surfaces ◽  
Silver Nanoclusters ◽  
Laser Evaporation ◽  
Si Substrates

AbstractWe describe recent experiments in which we attempted the initial steps for fabricating twodimensional arrays of metal nanocrystals. We use a commercial pulsed-laser deposition system in concert with a focused ion beam to attempt control over both lateral and vertical dimensions at the nanometer length scale. In our experiments, regular arrays of holes typically 80 nm in diameter were drilled in Si substrates using the focused ion beam. Silver atoms were then deposited onto these substrates by pulsed laser evaporation from a metallic target in high vacuum. Under certain conditions of substrate temperature, laser pulse repetition rate, and fluence, small silver nanoclusters form preferentially around the structures previously etched in the silicon surfaces by the focused ion beam.

Development of a Refractory Hexagonal Closed Packed High Entropy Alloy Based on Thin Film Screening

MRS Advances ◽  
2019 ◽  
Vol 4 (25-26) ◽  
pp. 1435-1440
Author(s):  
Azin Akbari ◽  
T. John Balk
Keyword(s):  
Thin Film ◽  
Single Phase ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Entropy Alloy ◽  
Electron Backscattered Diffraction ◽  
X Ray ◽  
High Entropy ◽  
Si Substrates ◽  
Hexagonal Closed Packed

In order to identify candidate high entropy alloys (HEAs) that have the hexagonal closed packed crystal structure, gradient thin films in the OsRuWMoRe system were deposited by sputtering from multiple elemental targets onto Si substrates. In addition to having compositional gradients, the films exhibited regions with different phases, some of which were single-phase and non-equiatomic. Such alloys have the potential to exhibit properties superior to the primarily equiatomic HEAs that have been the focus of most work in this area. To screen the phases that exist across the thin film gradient samples, a range of characterization techniques were employed, including focused ion beam and scanning electron microscopy, X-ray energy dispersive spectroscopy, X-ray diffraction and electron backscattered diffraction analysis. The combinatorial method described in this study enabled the identification of a candidate single-phase HEA that was subsequently fabricated as a bulk alloy.

ZrC Thin Films Grown by Pulsed Laser Deposition

2003 ◽  
Vol 780 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Surface Region ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Crystalline Films

AbstractZrC thin films were grown on Si substrates by the pulsed laser deposition (PLD) technique. X- ray photoelectron spectroscopy, x-ray diffraction and reflectivity, variable angle spectroscopic ellipsometry, and four point probe measurements were used to investigate the composition, density, thickness, surface morphology, optical and electrical properties of the grown structures. It has been found that crystalline films could be grown only by using fluences above 6 J/cm2 and substrate temperatures in excess of 500 °C. For a fluence of 10 J/cm2 and a substrate temperature of 700 °C, highly (100)-textured ZrC films exhibiting a cubic structure (a=0.469 nm) and a density of 6.7 g/cm3 were deposited. The use of a low-pressure atmosphere of C2H2 had a beneficial effect on crystallinity and stoichiometry of the films. All films contained high levels of oxygen contamination, especially in the surface region, because of the rather reactive nature of Zr atoms.

Heteroepitaxial Growth of Cubic Boron Nitride on Silicon

1992 ◽  
Vol 242 ◽  
Author(s):  
G. L. Doll ◽  
T. A. Perry ◽  
J. A. Sell ◽  
C. A. TAYLORS ◽  
R. Clarke
Keyword(s):  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Critical Value ◽  
Laser Deposition ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Present Evidence ◽  
X Ray ◽  
Si Substrates

ABSTRACTNew x-ray diffraction measurements performed on bonm nitride films deposited by pulsed excimer laser deposition are presented. The x-ray data, taken with both a molybdenum rotating anode source and synchrotron radiation, indicate that the epitaxial cBN films are ≤ 200 Å thick. We also report the successful growth of oriented crystalline diamond on the (001) surface of cBN/Si substrates using the method of pulsed laser deposition. X-ray diffraction measurements indicate that the diamond layer is 200 Å thick with a lattice constant of 3.56 Å. The structures of metastable films (cBN and diamond) are very sensitive to growth conditions: we present evidence that an epitaxial-crystalline to incoherent phase transition occurs when the thickness of the films exceeds a critical value (∼ 200 Å for our present growth conditions).

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