Use of Quantum-Well Superlattices to Obtain a High Figure of Merit from Nonconventional Thermoelectric Materials

1993 ◽  
Vol 326 ◽  
Author(s):  
L. D. Hicks ◽  
M. S. Dresselhaus
Keyword(s):  
Quantum Well ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
High Figure

Cubic AgPbmSbTe2+m: Bulk Thermoelectric Materials with High Figure of Merit.

ChemInform ◽  
2004 ◽  
Vol 35 (17) ◽  
Author(s):  
Kuei Fang Hsu ◽  
Sim Loo ◽  
Fu Guo ◽  
Wei Chen ◽  
Jeffrey S. Dyck ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
High Figure

A General Strategy for Designing Two-dimensional High-efficient Layered Thermoelectric Materials

2021 ◽  
Author(s):  
Xiwen Zhang ◽  
Yilv Guo ◽  
Zhaobo Zhou ◽  
Yunhai Li ◽  
Yunfei Chen ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
General Strategy ◽  
Two Dimensional ◽  
Energy Technology ◽  
The Core ◽  
High Efficient ◽  
High Figure

Two-dimensional (2D) thermoelectrics (TE) with high figure of merit (ZT > 2) is the core of the development of advanced energy technology. However, such a high ZT has never been...

Doping Studies of n-Type CsBi4Te6 Thermoelectric Materials

2000 ◽  
Vol 626 ◽  
Author(s):  
Melissa A. Lane ◽  
John R. Ireland ◽  
Paul W. Brazis ◽  
Theodora Kyratsi ◽  
Duck-Young Chung ◽  
...  
Keyword(s):  
Power Factor ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Doping Concentration ◽  
High Figure ◽  
P Type ◽  
Optimum Doping Concentration

ABSTRACTWe have previously reported the successful p-type doping of CsBi4Te6 which had a high figure of merit at temperatures below 300 K. In this study, several dopants were explored to make n-type CsBi4Te6. A program of measurements was performed to identify the optimum doping concentration for several series of dopants. The highest power factors occurred around 125 K for the 0.5% Sn doped CsBi4Te6 sample which had a power factor of 21.9 μW/cm•K2 and 1.0% Te doped CsBi4Te6 which had a power factor of 21.7 μW/cm•K2.

scholarly journals Realizing high figure of merit in heavy-band p-type half-Heusler thermoelectric materials

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Chenguang Fu ◽  
Shengqiang Bai ◽  
Yintu Liu ◽  
Yunshan Tang ◽  
Lidong Chen ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
High Figure ◽  
P Type

Rapid preparation of bulk Al x Yb0.25Co4Sb12 (x = 0, 0.1, 0.2, 0.3) skutterudite thermoelectric materials with high figure of merit ZT = 1.36

2017 ◽  
Vol 52 (9) ◽  
pp. 5324-5332 ◽  
Author(s):  
Mohamed Hamid Elsheikh ◽  
Mohd Faizul Mohd Sabri ◽  
Suhana Mohd Said ◽  
Yuzuru Miyazaki ◽  
H. H. Masjuki ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Rapid Preparation ◽  
High Figure

Thermoelectric power, electrical and thermal resistance, and magnetoresistance of nanowire composites.

2003 ◽  
Vol 793 ◽  
Author(s):  
Joseph P. Heremans
Keyword(s):  
Thermal Resistance ◽  
Thermoelectric Power ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Energy Gap ◽  
Size Quantization ◽  
Nanowire Diameter ◽  
Bismuth Nanowires ◽  
High Figure ◽  
Electron Wavefunction

ABSTRACTThe thermoelectric power of bismuth nanowires is theoretically calculated to be greatly enhanced over that of bulk Bi. This is a result of the size-quantization of the electron wavefunction in nanowires with diameters below 50 nm. The effect is expected to lead to the development of high figure of merit thermoelectric materials. We review here the experimental observation of such enhancement in composites containing nanowires with diameters down to 9 nm. When the wire diameter is further decreased, localization effects take over and limit the thermopower. The theory further predicts the appearance of an energy gap in bismuth nanowires with diameters below 50 nm. We observe such a gap in the temperature dependence of the resistivity. The dependence of the gap on nanowire diameter is consistent with theory. Comparisons of the transport properties of Bi nanowires with those in other nanowire systems show the influence of localization effects.

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