scholarly journals Realizing high figure of merit in heavy-band p-type half-Heusler thermoelectric materials

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
Chenguang Fu ◽  
Shengqiang Bai ◽  
Yintu Liu ◽  
Yunshan Tang ◽  
Lidong Chen ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
High Figure ◽  
P Type

Doping Studies of n-Type CsBi4Te6 Thermoelectric Materials

2000 ◽  
Vol 626 ◽  
Author(s):  
Melissa A. Lane ◽  
John R. Ireland ◽  
Paul W. Brazis ◽  
Theodora Kyratsi ◽  
Duck-Young Chung ◽  
...  
Keyword(s):  
Power Factor ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Doping Concentration ◽  
High Figure ◽  
P Type ◽  
Optimum Doping Concentration

ABSTRACTWe have previously reported the successful p-type doping of CsBi4Te6 which had a high figure of merit at temperatures below 300 K. In this study, several dopants were explored to make n-type CsBi4Te6. A program of measurements was performed to identify the optimum doping concentration for several series of dopants. The highest power factors occurred around 125 K for the 0.5% Sn doped CsBi4Te6 sample which had a power factor of 21.9 μW/cm•K2 and 1.0% Te doped CsBi4Te6 which had a power factor of 21.7 μW/cm•K2.

Fabrication of Bi-Te Based Thermoelectric Semiconductors by Using Hybrid Powders

2005 ◽  
Vol 297-300 ◽  
pp. 875-880
Author(s):  
Cheol Ho Lim ◽  
Ki Tae Kim ◽  
Yong Hwan Kim ◽  
Dong Choul Cho ◽  
Young Sup Lee ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Single Crystals ◽  
Thermoelectric Properties ◽  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Bending Strength ◽  
Mixing Ratio ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
P Type

P-type Bi0.5Sb1.5Te3 compounds doped with 3wt% Te were fabricated by spark plasma sintering and their mechanical and thermoelectric properties were investigated. The sintered compounds with the bending strength of more than 50MPa and the figure-of-merit 2.9×10-3/K were obtained by controlling the mixing ratio of large powders (PL) and small powders (PS). Compared with the conventionally prepared single crystal thermoelectric materials, the bending strength was increased up to more than three times and the figure-of-merit Z was similar those of single crystals. It is expected that the mechanical properties could be improved by using hybrid powders without degradation of thermoelectric properties.

Cubic AgPbmSbTe2+m: Bulk Thermoelectric Materials with High Figure of Merit.

ChemInform ◽  
2004 ◽  
Vol 35 (17) ◽  
Author(s):  
Kuei Fang Hsu ◽  
Sim Loo ◽  
Fu Guo ◽  
Wei Chen ◽  
Jeffrey S. Dyck ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
High Figure

Transparent conducting p-type thin films of c-axis self-oriented Bi2Sr2Co2Oy with high figure of merit

2014 ◽  
Vol 50 (68) ◽  
pp. 9697-9699 ◽  
Author(s):  
Renhuai Wei ◽  
Xianwu Tang ◽  
Ling Hu ◽  
Zhenzhen Hui ◽  
Jie Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Figure Of Merit ◽  
Solution Method ◽  
Transparent Conducting ◽  
High Figure ◽  
P Type

Transparent conducting p-type Bi2Sr2Co2Oy thin films show c-axis self-orientation with high figure of merit by a solution method.

High-performance p-type elemental Te thermoelectric materials enabled by the synergy of carrier tuning and phonon engineering

2020 ◽  
Vol 8 (24) ◽  
pp. 12156-12168
Author(s):  
Decheng An ◽  
Shaoping Chen ◽  
Xin Zhai ◽  
Yuan Yu ◽  
Wenhao Fan ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
High Performance ◽  
Figure Of Merit ◽  
Phonon Transport ◽  
P Type

An outstanding figure-of-merit zT ≈ 1.06 at 600 K for p-type elemental Te thermoelectrics is realized by synergistically tuning their carrier and phonon transport behaviors via a multicomponent alloying strategy.

Band engineering of high performance p-type FeNbSb based half-Heusler thermoelectric materials for figure of merit zT > 1

2015 ◽  
Vol 8 (1) ◽  
pp. 216-220 ◽  
Author(s):  
Chenguang Fu ◽  
Tiejun Zhu ◽  
Yintu Liu ◽  
Hanhui Xie ◽  
Xinbing Zhao
Keyword(s):  
Thermoelectric Materials ◽  
High Performance ◽  
Figure Of Merit ◽  
Heusler Compounds ◽  
Band Engineering ◽  
Engineering Approach ◽  
P Type

High performance p-type half-Heusler compounds FeNb1−xTixSb are developed via a band engineering approach and a record zT of 1.1 is achieved.

scholarly journals Synthesis of nanocrystalline Cu deficient CuCrO2 – a high figure of merit p-type transparent semiconductor

2016 ◽  
Vol 4 (1) ◽  
pp. 126-134 ◽  
Author(s):  
Leo Farrell ◽  
Emma Norton ◽  
Christopher M. Smith ◽  
David Caffrey ◽  
Igor V. Shvets ◽  
...  
Keyword(s):  
Figure Of Merit ◽  
Transparent Conducting Oxide ◽  
Process Temperature ◽  
Transparent Conducting ◽  
High Figure ◽  
Transparent Semiconductor ◽  
P Type ◽  
Conductive Properties

The delafossite structured CuCrO2 system is well known as p-type transparent conducting oxide. We have synthesized a Cu deficient form at low process temperature maintaining its good conductive properties.

scholarly journals Data analytics accelerates the experimental discovery of new thermoelectric materials with extremely high figure of merit

2021 ◽  
Author(s):  
Sergey Levchenko ◽  
Yaqiong Zhong ◽  
Xiaojuan Hu ◽  
Debalaya Sarker ◽  
Qingrui Xia ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
Figure Of Merit ◽  
Large Scale ◽  
Chemical Space ◽  
Small Data ◽  
Data Sets ◽  
High Performing ◽  
Learning Framework ◽  
Small Data Sets ◽  
P Type

Abstract Thermoelectric (TE) materials are among very few sustainable yet feasible energy solutions of present time. This huge promise of energy harvesting is contingent on identifying/designing materials having higher efficiency than presently available ones. However, due to the vastness of the chemical space of materials, only its small fraction was scanned experimentally and/or computationally so far. Employing a compressed-sensing based symbolic regression in an active-learning framework, we have not only identified a trend in materials’ compositions for superior TE performance, but have also predicted and experimentally synthesized several extremely high performing novel TE materials. Among these, we found polycrystalline p-type Cu0.45Ag0.55GaTe2 to possess an experimental figure of merit as high as ~2.8 at 827 K. This is a breakthrough in the field, because all previously known thermoelectric materials with a comparable figure of merit are either unstable or much more difficult to synthesize, rendering them unusable in large-scale applications. The presented methodology demonstrates the importance and tremendous potential of physically informed descriptors in material science, in particular for relatively small data sets typically available from experiments at well-controlled conditions.

Low lattice thermal conductivity and high figure of merit in p-type doped K3IO

2020 ◽  
Vol 29 (12) ◽  
pp. 126501
Author(s):  
Weiqiang Wang ◽  
Zhenhong Dai ◽  
Qi Zhong ◽  
Yinchang Zhao ◽  
Sheng Meng
Keyword(s):  
Thermal Conductivity ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
High Figure ◽  
P Type
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