Characterization of Valence Band Offsets in P-SI/SIGE/SI by Space Charge Spectroscopy

1993 ◽  
Vol 326 ◽  
Author(s):  
K. Schmalz ◽  
H. RüCker ◽  
I. N. Yassievich ◽  
H. G. Grimmeiss ◽  
W. Mehr ◽  
...  
Keyword(s):  
Space Charge ◽  
Valence Band ◽  
Band Offsets

Characterization of the valence band offset in p-Si/Si1−xGex/Si by space charge spectroscopy

1994 ◽  
Vol 37 (4-6) ◽  
pp. 945-948 ◽  
Author(s):  
K. Schmalz ◽  
H. Rücker ◽  
I.N. Yassievich ◽  
H.G. Grimmeiss ◽  
B. Dietrich ◽  
...  
Keyword(s):  
Space Charge ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset

scholarly journals Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition

AIP Advances ◽  
2016 ◽  
Vol 6 (3) ◽  
pp. 035211 ◽  
Author(s):  
Kristen Collar ◽  
Tong-Ho Kim ◽  
Maria Losurdo ◽  
April S. Brown
Keyword(s):  
Valence Band ◽  
Band Offsets ◽  
Gan Heterostructure

scholarly journals Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Ya-Wei Huan ◽  
Ke Xu ◽  
Wen-Jun Liu ◽  
Hao Zhang ◽  
Dmitriy Anatolyevich Golosov ◽  
...  
Keyword(s):  
Valence Band ◽  
Transition Metal Dichalcogenides ◽  
Three Dimensional ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Band Offsets ◽  
Group Iii ◽  
Nanoelectronic Devices ◽  
Metal Dichalcogenides ◽  
Band Alignments

AbstractHybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional heterojunction composed of transferred MoS2 on β-Ga2O3($$ 2- $$2-01) with and without nitridation. The conduction and valence band offsets for unnitrided 2D-MoS2/3D-β-Ga2O3 heterojunction were determined to be respectively 0.43 ± 0.1 and 2.87 ± 0.1 eV. For the nitrided heterojunction, the conduction and valence band offsets were deduced to 0.68 ± 0.1 and 2.62 ± 0.1 eV, respectively. The modified band alignment could result from the dipole formed by charge transfer across the heterojunction interface. The effect of nitridation on the band alignments between group III oxides and transition metal dichalcogenides will supply feasible technical routes for designing their heterojunction-based electronic and optoelectronic devices.

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

An Investigation of the Distribution of Electric Potential and Space Charge in a Silicon Nanowire

2014 ◽  
Vol 69 (10-11) ◽  
pp. 597-605 ◽  
Author(s):  
A. Wesam Al-Mufti ◽  
Uda Hashim ◽  
Md. Mijanur Rahman ◽  
Tijjani Adam
Keyword(s):  
Finite Element Method ◽  
Space Charge ◽  
Electric Potential ◽  
Silicon Nanowire ◽  
Electrical Potential ◽  
Comsol Multiphysics ◽  
The Finite Element Method ◽  
Simulation Experiments ◽  
Different Dimensions

AbstractThe distribution of electric potential and space charge in a silicon nanowire has been investigated. First, a model of the nanowire is generated taking into consideration the geometry and physics of the nanowire. The physics of the nanowire was modelled by a set of partial differential equations (PDEs) which were solved using the finite element method (FEM). Comprehensive simulation experiments were performed on the model in order to compute the distribution of potential and space charge. We also determined, through simulation, how the characteristic of the nanowire is affected by its dimensions. The characterization of the resulting nanowire, calculated by COMSOL Multiphysics, shows different dimensions and their effect on space charge and electrical potential

Characterization of Si/Si1−xGex/Si quantum wells by space-charge spectroscopy

1994 ◽  
Vol 50 (19) ◽  
pp. 14287-14301 ◽  
Author(s):  
K. Schmalz ◽  
I. N. Yassievich ◽  
H. Rücker ◽  
H. G. Grimmeiss ◽  
H. Frankenfeld ◽  
...  
Keyword(s):  
Space Charge ◽  
Quantum Wells

Effect of Deposition Method on Valence Band Offsets of SiO2 and Al2O3 on (Al0.14Ga0.86)2O3

2018 ◽  
Vol 8 (7) ◽  
pp. Q3001-Q3006 ◽  
Author(s):  
Chaker Fares ◽  
F. Ren ◽  
David C. Hays ◽  
B. P. Gila ◽  
S. J. Pearton
Keyword(s):  
Valence Band ◽  
Deposition Method ◽  
Band Offsets

Valence band offsets in strained GaAs1−xPx/GaAs heterojunctions

1995 ◽  
Vol 24 (6) ◽  
pp. 713-717 ◽  
Author(s):  
Neal G. Anderson ◽  
Farid Agahi ◽  
Arvind Baliga ◽  
Kei May Lau
Keyword(s):  
Valence Band ◽  
Band Offsets
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