Density of States of Hydrogenic Impurities in GaAs/GaAlAs Quantum Wires

1993 ◽  
Vol 325 ◽  
Author(s):  
Salviano A. LeÃo ◽  
O. HipÓlito ◽  
A. Ferreira Da Silva

AbstractWe investigate the occurrence of impurity density of states of hydrogenic impurities placed on the axis of a cylinder quantum-well wire of GaAs/GaAlAs structure. The effects of disorder are taken into account in the calculation. It is shown that for a specific radius of the wire, the peak energy of the density of states as a function of the impurity concentration increases very fast enlarging the bandwidth. The impurity bands are considered for the observed binding energy and radius as well as for the impurity concentration of experimental interest.

1992 ◽  
Vol 06 (29) ◽  
pp. 1881-1885
Author(s):  
I.C. DA CUNHA LIMA ◽  
A. FERREIRA DA SILVA

Quasi-one-dimensional channels have already been fabricated by holographic lithography on semiconductor heterostructures. We study the formation of an impurity band for shallow donors located inside the channels assuming they have been created by applying a modulated gate voltage in a quantum well of AlxGa1−xAs−GaAs. We calculate the changes in the impurity density of states as a function of the gate voltage. It is shown that the increase of the applied gate voltage leads to higher binding energy and larger impurity bandwidth.


2002 ◽  
Vol 91 (1) ◽  
pp. 232 ◽  
Author(s):  
M. Bouhassoune ◽  
R. Charrour ◽  
M. Fliyou ◽  
D. Bria ◽  
A. Nougaoui

2001 ◽  
Vol 304 (1-4) ◽  
pp. 389-397 ◽  
Author(s):  
M. Bouhassoune ◽  
R. Charrour ◽  
M. Fliyou ◽  
D. Bria ◽  
A. Nougaoui

2000 ◽  
Vol 98 (1-2) ◽  
pp. 111-122 ◽  
Author(s):  
M. Bouhassoune ◽  
R. Charrour ◽  
M. Fliyou ◽  
D. Bria ◽  
A. Nougaoui

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