Transverse laser dressing effects on the subband density of states in a 20-nm-wide GaAs/Al0.3Ga0.7As quantum well wire

2012 ◽  
Vol 44 (7-8) ◽  
pp. 1446-1453 ◽  
Author(s):  
A. Radu
Keyword(s):  
Quantum Well ◽  
Density Of States ◽  
Laser Dressing ◽  
Quantum Well Wire ◽  
20 Nm

Density of States of Hydrogenic Impurities in GaAs/GaAlAs Quantum Wires

1993 ◽  
Vol 325 ◽  
Author(s):  
Salviano A. LeÃo ◽  
O. HipÓlito ◽  
A. Ferreira Da Silva
Keyword(s):  
Binding Energy ◽  
Quantum Well ◽  
Density Of States ◽  
Impurity Concentration ◽  
Quantum Wires ◽  
Impurity Density ◽  
Peak Energy ◽  
Quantum Well Wire ◽  
Effects Of Disorder ◽  
Impurity Bands

AbstractWe investigate the occurrence of impurity density of states of hydrogenic impurities placed on the axis of a cylinder quantum-well wire of GaAs/GaAlAs structure. The effects of disorder are taken into account in the calculation. It is shown that for a specific radius of the wire, the peak energy of the density of states as a function of the impurity concentration increases very fast enlarging the bandwidth. The impurity bands are considered for the observed binding energy and radius as well as for the impurity concentration of experimental interest.

Effect of magnetic field on the donor impurity in CdTe/Cd1-xMnxTe quantum well wire

2016 ◽  
Author(s):  
P. Kalpana ◽  
A. Merwyn Jasper D. Reuben ◽  
P. Nithiananthi ◽  
K. Jayakumar
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Donor Impurity ◽  
Quantum Well Wire

Photoluminescence Characterization of SiGe/Si Quantum-Well Wire Structures

1995 ◽  
Vol 379 ◽  
Author(s):  
S. Nilsson ◽  
H. P. Zeindl ◽  
A. Wolff ◽  
K. Pressel
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Optical Quality ◽  
Photoluminescence Spectra ◽  
Single Quantum Well ◽  
Quantum Well Wire ◽  
Carbon Interstitial

ABSTRACTLow-temperature photoluminescence measurements were performed in order to probe the optical quality of SiGe/Si quantum-well wire structures fabricated by electron-beam lithography and subsequent reactive ion etching, having the patterned polymethylmethacrylate resist as an etch mask. In addition, one set of quantum-well wire structures was post-treated by means of annealing in a hydrogen environment. Our results show that even for the smallest wires of about 100nm in width, the wires exhibit phonon-resolved photoluminescence spectra, similar to that from the molecular beam eptitaxially grown SiGe single quantum well which was used as starting material for the patterning process. After the patterning process a new sharp peak appears in the photoluminescence spectra at 0.97eV in photon energy. Our investigation suggests that this feature is introduced by damage during the patterning process and most probably identical to the G-line, which previously was identified as originating from the dicarbon centre (substitutional carbon-interstitial carbon) in Si. This centre is known to be a very common endproduct of irradiating Si near room temperature which is the case at our patterning process.

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