In-situ Multilayer Film Growth Characterization by Brewster Angle Reflectance Differential Spectroscopy

1993 ◽  
Vol 324 ◽  
Author(s):  
N. Dietz ◽  
D.J. Stephens ◽  
G. Lucovsky ◽  
K.J. Bachmann
Keyword(s):  
Optical Constants ◽  
Multilayer Film ◽  
Film Growth ◽  
Polarized Light ◽  
Layer Growth ◽  
Brewster Angle ◽  
Film Deposition ◽  
In Situ Monitoring ◽  
Differential Spectroscopy

AbstractBrewster Angle Reflectance Differential Spectroscopy (BARDS) has been proposed as an optical method for real-time characterization of the growth of thin films. BARDS is based on changes in the reflectivity, Rp, of parallel (p)-polarized light incident at, or near, the Brewster angle of the substrate material. Changes in R are sufficiently large to monitor layer growth, and to determine the thickness and the optical constants of the deposited film. In this paper we extend the method to multilayer film deposition. The derivative properties of R are correlated with differences in the optical constants of the two materials, and with the sharpness of their interface. We present spectra for SiO2/Si3N4/SiO2/Si, demonstrating some of these aspects of this new and effective approach to in-situ monitoring.

Comparative Study on in-situ Ellipsometric Monitoring of III-Nitride Film Growth via Plasma-Enhanced Atomic Layer Deposition

2019 ◽  
Vol 28 (03n04) ◽  
pp. 1940020
Author(s):  
Adnan Mohammad ◽  
Deepa Shukla ◽  
Saidjafarzoda Ilhom ◽  
Brian Willis ◽  
Ali Kemal Okyay ◽  
...  
Keyword(s):  
Growth Rate ◽  
Real Time ◽  
Film Growth ◽  
Atomic Layer ◽  
Layer Growth ◽  
In Situ Monitoring ◽  
Rf Plasma ◽  
Nitride Film ◽  
The Impact

In this paper a comparative in-situ ellipsometric analysis is carried out on plasma-assisted ALD-grown III-nitride (AlN, GaN, and InN) films. The precursors used are TMA, TMG, and TMI for AlN, GaN, and InN respectively, while Ar is used as purge gas. For all of the films N2/H2/Ar plasma was used as the co-reactant. The work includes real-time in-situ monitored saturation curves, unit ALD cycle analysis, and >500 cycle film growth runs. In addition, the films are grown at different substrate temperatures to observe the impact of temperature not only on the growth rate but on how it influenced the precursor chemisorption, ligand removal, and nitrogen incorporation surface reactions. All three nitride films confirm fairly linear growth character. The growth rate per cycle (GPC) for each film is also measured with respect to rf-plasma power to obtain the surface saturation conditions during ALD growth. The real-time in-situ monitoring of the film growth can really be beneficial to understand the atomic layer growth and film formation in each individual ALD cycle.

Soft x-ray spectrometer for in situ monitoring of thin-film growth

1994 ◽  
Author(s):  
Per Skytt ◽  
Carl J. Englund ◽  
Nial Wassdahl ◽  
Derrick C. Mancini ◽  
Joseph Nordgren
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
In Situ Monitoring ◽  
X Ray

Optical in situ monitoring of MOVPE GaSb(100) film growth

2003 ◽  
Vol 248 ◽  
pp. 244-248 ◽  
Author(s):  
K. Möller ◽  
Z. Kollonitsch ◽  
Ch. Giesen ◽  
M. Heuken ◽  
F. Willig ◽  
...  
Keyword(s):  
Film Growth ◽  
In Situ Monitoring

Optical fiber-based sensor for in situ monitoring of cadmium sulfide thin-film growth

2013 ◽  
Vol 38 (24) ◽  
pp. 5385 ◽  
Author(s):  
Farzia Karim ◽  
Tanujjal Bora ◽  
Mayur B. Chaudhari ◽  
Khaled Habib ◽  
Waleed S. Mohammed ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Fiber ◽  
Cadmium Sulfide ◽  
Film Growth ◽  
Thin Film Growth ◽  
In Situ Monitoring

In situ monitoring of film deposition with an ellipsometer based on a four-detector photopolarimeter

1996 ◽  
Vol 35 (28) ◽  
pp. 5626 ◽  
Author(s):  
E. Masetti ◽  
M. Montecchi ◽  
R. Larciprete ◽  
S. Cozzi
Keyword(s):  
Film Deposition ◽  
In Situ Monitoring

Atomic Layer Growth of SiO2 on Si(100) Using the Sequential Deposition of SiCl4 and H2O

1993 ◽  
Vol 334 ◽  
Author(s):  
Ofer Sneh ◽  
Michael L. Wise ◽  
Lynne A. Okada ◽  
Andrew W. Ott ◽  
Steven M. George
Keyword(s):  
High Pressure ◽  
Film Growth ◽  
Atomic Layer ◽  
Reaction Scheme ◽  
Layer Growth ◽  
Film Deposition ◽  
Layer By Layer ◽  
High Pressure Cell ◽  
Experimental Apparatus ◽  
Binary Reaction

AbstractThis study explored the surface chemistry and the promise of the binary reaction scheme:(A) Si-OH+SiCl4 → Si-Cl + HCl(B) Si-Cl + H2O → Si-OH + HClfor controlled SiO2 film deposition. In this binary ABAB… sequence, each surface reaction may be self-terminating and ABAB… repetitive cycles may produce layer-by-layer controlled deposition. Using this approach, the growth of SiO2 thin films on Si(100) with atomic layer control was achieved at 600 K with pressures in the 1 to 50 Torr range. The experiments were performed in a small high pressure cell situated in a UHV chamber. This design couples CVD conditions for film growth with a UHV environment for surface analysis using laser-induced thermal desorption (LITD), temperature-programmed desorption (TPD) and Auger electron spectroscopy (AES). The controlled layer-by-layer deposition of SiO2 on Si(100) was demonstrated and optimized using these techniques. A stoichiometric and chlorine-free SiO2 film was also produced as revealed by TPD and AES analysis. SiO2 growth rates of approximately 1 ML of oxygen per AB cycle were obtained at 600 K. These studies demonstrate the methodology of using the combined UHV/high pressure experimental apparatus for optimizing a binary reaction CVD process.

scholarly journals A New Alternative Electrochemical Process for a Pre-Deposited UPD-Mn Mediated the Growth of Cu(Mn) Film by Controlling the Time during the Cu-SLRR

Coatings ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 164
Author(s):  
Jau-Shiung Fang ◽  
Yu-Fei Sie ◽  
Yi-Lung Cheng ◽  
Giin-Shan Chen
Keyword(s):  
Film Growth ◽  
Atomic Layer ◽  
Open Circuit ◽  
Electrochemical Process ◽  
Layer Growth ◽  
Film Deposition ◽  
Layer By Layer ◽  
Cu Interconnects ◽  
Electrochemical Growth ◽  
Growth Method

A layer-by-layer deposition is essential for fabricating the Cu interconnects in a nanoscale-sized microelectronics because the gap-filling capability limits the film deposition step coverage on trenches/vias. Conventional layer-by-layer electrochemical deposition of Cu typically works by using two electrolytes, i.e., a sacrificial Pb electrolyte and a Cu electrolyte. However, the use of a Pb electrolyte is known to cause environmental issues. This study presents an Mn monolayer, which mediated the electrochemical growth of Cu(Mn) film through a sequence of alternating an underpotential deposition (UPD) of Mn, replacing the conventionally used UPD-Pb, with a surface-limited redox replacement (SLRR) of Cu. The use of the sacrificial Mn monolayer uniquely provides redox replacement by Cu2+ owing to the standard reductive potential differences. Repeating the sequence of the UPD-Mn followed by the SLRR-Cu enables Cu(Mn) film growth in an atomic layer growth manner. Further, controlling the time of open circuit potential (OCP) during the Cu-SLRR yields a technique to control the content of the resultant Cu(Mn) film. A longer OCP time caused more replacement of the UPD-Mn by the Cu2+, thus resulting in a Cu(Mn) film with a higher Cu concentration. The proposed layer-by-layer growth method offers a wet, chemistry-based deposition capable of fabricating Cu interconnects without the use of the barrier layer and can be of interest in microelectronics.

Crossover Scaling in Thick Film Growth on Vicinal Surfaces

1997 ◽  
Vol 11 (31) ◽  
pp. 3647-3655 ◽  
Author(s):  
Alberto Pimpinelli ◽  
Philippe Peyla
Keyword(s):  
Thick Film ◽  
Particle Deposition ◽  
Film Growth ◽  
Kinetic Monte Carlo ◽  
Layer Growth ◽  
Film Deposition ◽  
Rate Equations ◽  
Layer By Layer ◽  
Step Flow ◽  
Step Step

Crystal growth by particle deposition on a vicinal surface is studied by kinetic Monte Carlo simulations as a model for molecular beam epitaxy. In particular, the crossover between step flow and layer-by-layer growth during thick film deposition is investigated as a function of the atom deposition rate F, temperature and step-step distance d. The crossover scaling function for the island density is derived analytically by coupling rate equations to the Burton, Cabrera and Frank theory for step flow.

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