In situ determination of optical constants of growing hydrogenated amorphous silicon film by p‐polarized light reflectance measurement on the surface

1993 ◽  
Vol 73 (11) ◽  
pp. 7987-7989 ◽  
Author(s):  
A. Takano ◽  
M. Kawasaki ◽  
H. Koinuma
Keyword(s):  
Optical Constants ◽  
Silicon Film ◽  
Hydrogenated Amorphous Silicon ◽  
Polarized Light ◽  
Reflectance Measurement ◽  
Amorphous Silicon Film ◽  
Light Reflectance ◽  
Hydrogenated Amorphous

Thickness and Optical Constants Calculation of Hydrogenated Amorphous Silicon Film Based on Transmission and Reflectance Spectra

2011 ◽  
Vol 40 (7) ◽  
pp. 1096-1100 ◽  
Author(s):  
丁文革 DING Wenge ◽  
苑静 YUAN Jing ◽  
李文博 LI Wenbo ◽  
李彬 LI Bin ◽  
于威 YU Wei ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Optical Constants ◽  
Silicon Film ◽  
Hydrogenated Amorphous Silicon ◽  
Reflectance Spectra ◽  
Amorphous Silicon Film ◽  
Hydrogenated Amorphous

Light-Induced Effects on Fluorinated Amorphous and Microcrystalline Silicon Films

1996 ◽  
Vol 420 ◽  
Author(s):  
Hong-Seok Choi ◽  
Keun-Ho Jang ◽  
Jhun-Suk Yoo ◽  
Min-Koo Han
Keyword(s):  
Band Gap ◽  
Vapor Deposition ◽  
Optical Band Gap ◽  
Silicon Film ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Microcrystalline Silicon ◽  
Amorphous Silicon Film ◽  
Hydrogenated Amorphous

AbstractThe fluorinated amorphous and microcrystalline silicon (a,μc-Si:H;F) films have been prepared by rf plasma enhanced chemical vapor deposition (PECVD) with SiH 4 and SiF 4 gas mixtures. The stretching Si-O (1085 cm-1) and SiH2 (2100 cm-1) bands estimated from infrared (IR) spectroscope data have related to the evolution of crystallinity and the optical band gap was shifted by introducing Si-O bonds. The sub-band gap absorption coefficient in a,μc-Si:H;F films was about one order lower than that in hydrogenated amorphous silicon film (a-Si:H). The subband gap absorption in a-Si:H;F film was comparable to that in tic-Si:H;F films. The lightinduced degradation of a,μc-Si:H;F films were also suppressed.

Determination of porous silicon film parameters by polarized light reflectance measurements

1993 ◽  
Vol 233 (1-2) ◽  
pp. 131-136 ◽  
Author(s):  
P. Basmaji ◽  
V.S. Bagnato ◽  
V. Grivickas ◽  
G.I. Surdutovich ◽  
R. Vitlina
Keyword(s):  
Porous Silicon ◽  
Silicon Film ◽  
Polarized Light ◽  
Light Reflectance ◽  
Reflectance Measurements
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