Diode Laser-Assisted Deposition of Gold and Copper from Thin Organometallic Films

1993 ◽  
Vol 323 ◽  
Author(s):  
Stephane Evoy ◽  
Marie-Hélène Bernier ◽  
Ricardo Izquierdo ◽  
Fabrice Pieri ◽  
Michel Meunier ◽  
...  

AbstractWe have developed a simple, compact and economical diode laser-assisted process for the direct writing of gold and copper on polyimide. Gold precursor films were deposited by spin-coating a commercially available organometallic compound onto the substrate. The local pyrolysis of these films was induced by the focused beam of an AlGaAs diode laser array ( Pmax = 1 W, λ = 796 nm). Direct writing was achieved in open air while moving the substrate at speeds up to 15 mm/s. Gold lines 13–17 μm wide, ∼0.1 μm thick, and having a resistivity of 30 μΩ·cm, were obtained on polyimide with good reproducibility using writing speeds > 10 mm/s. Following a simple annealing process, these gold lines successfully activated the electroless plating of copper. After 45 min of plating, 2 μm thick Cu/Au conductors, having a resistivity of 8 μΩ·cm, were deposited. A commercially available copper precursor was also studied for the direct deposition of copper.

1991 ◽  
Vol 236 ◽  
Author(s):  
P. Desjardins ◽  
R. Izquierdo ◽  
M. Meunier

AbstractWe have developed a compact and inexpensive laser direct writing system, based on the 796 nm radiation of a 1 W diode laser array for the deposition of tungsten silicides. The laser power incident on TiN substrates varies between 50 and 550 mW. Lines are deposited from a gas mixture of WF6 and SiH4, whose total pressure is kept below 15 Torr to avoid uncontrolled reactions. Experiments are performed in a static reactor with WF6/SiH4 ratios varying from 0.2 to 10. Lines written at speeds ranging from 2 to 100 μm/s have typical thicknesses and widths varying from 30 to 1000 μm and from 4 to 15 μm respectively. Auger Electron Spectroscopy (AES) shows that no fluorine is incorporated in the WSix film, within the limit of detection. Moreover, no oxygen, carbon or nitrogen are detected in the bulk, although some surface contamination is present. From AES measurements, the W/Si ratio is estimated to be between 1.1 and 1.4 for a reactive gas mixture of WF6: SiH4 (1: 3).


1991 ◽  
Vol 16 (22) ◽  
pp. 1717 ◽  
Author(s):  
L. Y. Pang ◽  
J. G. Fujimoto ◽  
E. S. Kintzer

2015 ◽  
Author(s):  
Jingwei Wang ◽  
Xiaoning Li ◽  
Feifei Feng ◽  
Yalong Liu ◽  
Dong Hou ◽  
...  

2016 ◽  
Vol 366 ◽  
pp. 227-232 ◽  
Author(s):  
Ming Lv ◽  
Jianguo Liu ◽  
Suhuan Wang ◽  
Jun Ai ◽  
Xiaoyan Zeng

2006 ◽  
Vol 89 (23) ◽  
pp. 231120 ◽  
Author(s):  
Qiang Li ◽  
Pengfei Zhao ◽  
Weirong Guo

1988 ◽  
Vol 52 (12) ◽  
pp. 939-941 ◽  
Author(s):  
N. W. Carlson ◽  
G. A. Evans ◽  
J. M. Hammer ◽  
M. Lurie ◽  
L. A. Carr ◽  
...  
Keyword(s):  

RSC Advances ◽  
2016 ◽  
Vol 6 (108) ◽  
pp. 106508-106515 ◽  
Author(s):  
Yan Li ◽  
Lifeng Wang ◽  
Juan Ge ◽  
Jun Wang ◽  
Qiyao Li ◽  
...  

GQDs surface modified ZnO + Cu heterostructure photocatalysts was prepared via a simple spin-coating and annealing process, which exhibits enhanced photocatalytic performance.


2006 ◽  
Vol 14 (22) ◽  
pp. 10469 ◽  
Author(s):  
Lei S. Meng ◽  
Boris Nizamov ◽  
Pratheepan Madasamy ◽  
Jason K. Brasseur ◽  
Tom Henshaw ◽  
...  

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