Kinetic Study Of Crystallisation In Amorphous Thin Lpcvd Si Films
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ABSTRACTThe crystallisation behaviour of LPCVD silicon films has been investigated by TEM from in situ isothermal annealing of undoped a-Si films deposited from disilane (Si2H6) at temperatures 450,465 and 480 °C and at gas pressure of 200 MTorr. Nucleation kinetics, grain growth rates and crystallisation kinetics were determined for temperatures ranging from 600 to 675 °C. Nucleation kinetics have been experimentally determined in the early first stages of annealing : they do not show any steady-state rate and are fitted according to a power law. Experimental data for crystallisation kinetics are fitted by an Avrami law without introducing any incubation time.
1965 ◽
Vol 209
(4)
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pp. 811-814
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1970 ◽
Vol 40
(3)
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pp. 692-697
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1990 ◽
Vol 127
(2)
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pp. L15-L18
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1987 ◽
Vol 414
(1847)
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pp. 297-314
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1982 ◽
Vol 95
(3)
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pp. 465-487
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