Growth of Buried CoSi2 Layers in Si(100) by Molecular Beam Allotaxy

1993 ◽  
Vol 320 ◽  
Author(s):  
S. Mantl ◽  
H.L. Bay ◽  
I. Michel ◽  
S. Mesters ◽  
H. Trinkaus
Keyword(s):  
Simple Model ◽  
Peak Concentration ◽  
Molecular Beam ◽  
Single Crystalline ◽  
Precipitate Layer ◽  
Local Coarsening

ABSTRACTBuried single crystalline CoSi2 layers in Si(100) have been grown using molecular beam allotaxy. In this paper, we investigated the diffusive interaction of two buried silicide precipitate layers, one with a small Co peak concentration of 10 at% and another one with 26 at%. Annealing causes first local coarsening in each layer, and then dissolution of the thinner precipitate layer. The accumulation of the Co atoms at the thicker layer is described by a simple model for the diffusional redistribution.

Single-crystalline BaTiO3films grown by gas-source molecular beam epitaxy

2014 ◽  
Vol 7 (12) ◽  
pp. 125502 ◽  
Author(s):  
Yuya Matsubara ◽  
Kei S. Takahashi ◽  
Yoshinori Tokura ◽  
Masashi Kawasaki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Crystalline ◽  
Gas Source

Properties of Epitaxial SrTiO3 Thin Films Grown on Silicon by Molecular Beam Epitaxy

1999 ◽  
Vol 567 ◽  
Author(s):  
Z. Yu ◽  
R. Droopad ◽  
J. Ramdani ◽  
J.A. Curless ◽  
C.D. Overgaard ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
State Density ◽  
Unit Cell ◽  
Ex Situ ◽  
Silicon Oxide Layer ◽  
Single Crystalline ◽  
X Ray

ABSTRACTSingle crystalline perovskite oxides such as SrTiO3 (STO) are highly desirable for future generation ULSI applications. Over the past three decades, development of crystalline oxides on silicon has been a great technological challenge as an amorphous silicon oxide layer forms readily on the Si surface when exposed to oxygen preventing the intended oxide heteroepitaxy on Si substrate. Recently, we have successfully grown epitaxial STO thin films on Si(001) surface by using molecular beam epitaxy (MBE) method. Properties of the STO films on Si have been characterized using a variety of techniques including in-situ reflection high energy electron diffraction (RHEED), ex-situ X-ray diffraction (XRD), spectroscopic ellipsometry (SE), Auger electron spectroscopy (AES) and atomic force microscopy (AFM). The STO films grown on Si(001) substrate show bright and streaky RHEED patterns indicating coherent two-dimensional epitaxial oxide film growth with its unit cell rotated 450 with respect to the underlying Si unit cell. RHEED and XRD data confirm the single crystalline nature and (001) orientation of the STO films. An X-ray pole figure indicates the in-plane orientation relationship as STO[100]//Si[110] and STO(001)// Si(001). The STO surface is atomically smooth with AFM rms roughness of 1.2 AÅ. The leakage current density is measured to be in the low 10−9 A/cm2 range at 1 V, after a brief post-growth anneal in O2. An interface state density Dit = 4.6 × 1011 eV−1 cm−2 is inferred from the high-frequency and quasi-static C-V characteristics. The effective oxide thickness for a 200 Å STO film is around 30 Å and is not sensitive to post-growth anneal in O2 at 500-700°C. These STO films are also robust against forming gas anneal. Finally, STO MOSFET structures have been fabricated and tested. An extrinsic carrier mobility value of 66 cm2 V−11 s−1 is obtained for an STO PMOS device with a 2 μm effective gate length.

Carbonization Dynamics of Silicon Surfaces By Hydrocarbon Gas Molecular Beams

1991 ◽  
Vol 220 ◽  
Author(s):  
Tatsuo Yoshinobu ◽  
Takashi Fuyuki ◽  
Hiroyuki Matsunami
Keyword(s):  
Substrate Temperature ◽  
Molecular Beam ◽  
Surface Reaction ◽  
Narrow Range ◽  
Gradual Increase ◽  
Molecular Beams ◽  
Silicon Surfaces ◽  
Surface Oxide Layer ◽  
Single Crystalline ◽  
Hydrocarbon Gas

ABSTRACTCarbonization dynamics of Si surfaces using a hydrocarbon gas molecular beam was investigated. In case of carbonizing atomically clean Si surfaces with C2H2, single crystalline 3C-SiC layers were obtained only In the narrow range of a substrate temperature near 780 °C. Control of surface reaction by a cap of very thin surface oxide layer and gradual increase of substrate temperature during carbonization were found to be effective in forming single crystalline 3C-SiC layers reproducibly.

Polycrystalline to Single-Crystalline InN Grown on Si(111) Substrates by Plasma-Assisted Molecular-Beam Epitaxy

2005 ◽  
Vol 44 (No. 34) ◽  
pp. L1076-L1079 ◽  
Author(s):  
Ching-Lien Hsiao ◽  
Li-Wei Tu ◽  
Min Chen ◽  
Zhi-Wei Jiang ◽  
Ni-Wan Fan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Crystalline

Two Step Growth of InN Films on Sapphire (0001) Substrates Without Nitridation Process by RF-MBE

2001 ◽  
Vol 693 ◽  
Author(s):  
Tomohiro Yamaguchi ◽  
Yoshiki Saito ◽  
Kenji Kano ◽  
Tomo Muramatsu ◽  
Tsutomu Araki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Radio Frequency Plasma ◽  
Single Crystalline ◽  
Nitridation Process ◽  
Frequency Plasma ◽  
Step Growth

AbstractInN films were grown on sapphire (0001) substrates by radio-frequency plasma-assisted molecular beam epitaxy. The InN buffer layers deposited at low temperature were either grown on a substrate with nitridation or on a substrate without nitridation. The InN buffer layers on the nitridated substrates were always single crystalline, whereas the buffer layers on non-nitridated substrates were always polycrystalline. However, even without nitridation process, single crystalline InN films could be grown on the polycrystalline InN buffer layers; in this case, the orientation was always [1120] InN//[1120] sapphire epitaxy, which differed from the [1010] InN//[1120] sapphire epitaxy in films grown with nitridation.

Thick single crystalline vanadyl phthalocyanine film epitaxially grown on KBr crystal by molecular beam epitaxy

1996 ◽  
Vol 160 (3-4) ◽  
pp. 279-282 ◽  
Author(s):  
Kenko Yamada ◽  
Hajime Hoshi ◽  
Ken Ishikawa ◽  
Hideo Takezoe ◽  
Atsuo Fukuda ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Crystalline
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