Solid State Amorphization in Silicide—Forming Systems

1993 ◽  
Vol 320 ◽  
Author(s):  
L.J. Chen ◽  
W.Y. Hsieh ◽  
J.H. Lin ◽  
T.L. Lee ◽  
J.F. Chen ◽  
...  
Keyword(s):  
Refractory Metal ◽  
Solid Phase ◽  
Function Analysis ◽  
Platinum Group Metal ◽  
Auto Correlation ◽  
Initial Stage ◽  
Auto Correlation Function ◽  
The Stability ◽  
State Amorphization ◽  
Amorphous Interlayer

ABSTRACTSolid phase amorphization has been found to occur in all refractory metal and a number of rare—earth and platinum group metal thin film on silicon systems. For Ti/Si, Zr/Si, Hf/Si, V/Si, Nb/Si and Ta/Si systems, the growth of amorphous interlayer (a—interlayer) was found to follow a linear law in the initial stage. Si atom was found to be the dominant diffusing species in the solid phase amorphization in Ti/Si, Zr/Si and Hf/Si systems. For the Y/Si system, the stability of amorphous interlayer depends critically on the composition of the amorphous films.Auto–correlation function analysis was utilized to determine the structure of the amorphous interlayers. HRTEM in conjunction with the fast Fourier transform were applied to determine the first nucleated crystalline phase. Simultaneous presence of multiphases was observed to occur in a number of refractory metal/Si systems. Interesting electrical properties of amorphous interlayers were found for Ti/Si, Zr/Si and Hf/Si systems.

KIC 5359678: A detached eclipsing binary with starspots

2021 ◽  
Author(s):  
Jiaxin Wang ◽  
Jianning Fu ◽  
Hubiao Niu ◽  
Yang Pan ◽  
Chunqian Li ◽  
...  
Keyword(s):  
Main Sequence ◽  
Function Analysis ◽  
Light Curves ◽  
Main Sequence Stars ◽  
Period Range ◽  
Eclipsing Binary ◽  
A Value ◽  
Auto Correlation ◽  
Auto Correlation Function ◽  
The Masses

Abstract We study the detached eclipsing binary, KIC 5359678, with starspot modulation using the high-quality Kepler photometry and LAMOST spectroscopy. The PHOEBE model, optimal for this binary, reveals that this system is a circular detached binary, composed of two F-type main-sequence stars. The masses and radii of the primary and the secondary are M1 = 1.31 ± 0.05M⊙, R1 = 1.52 ± 0.04R⊙, M2 = 1.12 ± 0.04M⊙, and R2 = 1.05 ± 0.06R⊙, respectively. The age of this binary is estimated to be about 2Gyr, a value much longer than the synchronization timescale of 17.8 Myr. The residuals of light curves show quasi-sinusoidal signals, which could be induced by starspots. We apply auto-correlation function analysis on the out-of-eclipse residuals and find that the spot with rotational period close to the orbital period, while, the decay timescale of starspots is longer than that on the single stars with the same temperature, period range, and rms scatter. A two-starspot model is adopted to fit the signals with two-dip pattern, whose result shows that the longitude decreases with time.

Auto-correlation function analysis of crystallization in amorphous SiGe thin films

2003 ◽  
Vol 212-213 ◽  
pp. 339-343 ◽  
Author(s):  
T.F. Chiang ◽  
W.W. Wu ◽  
S.L. Cheng ◽  
H.H. Lin ◽  
S.W. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Correlation Function ◽  
Function Analysis ◽  
Auto Correlation ◽  
Auto Correlation Function

Process and Mechanism of CoSi2/Si Solid Phase Epitaxy by Multilayer Reaction

1999 ◽  
Vol 580 ◽  
Author(s):  
Bing-Zong Li ◽  
Xin-Ping Qu ◽  
Guo-Ping Ru ◽  
Ning Wang ◽  
Paul Chu
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Solid Phase Epitaxy ◽  
Initial Stage ◽  
Vital Effect ◽  
Amorphous Si ◽  
Kinetics Of ◽  
State Amorphization

AbstractA multilayer structure of Co/a-Si/Ti/Si(100) together with Co/Ti/Si(100) is applied to investigate the process and mechanism of CoSi2 epitaxial growth on a Si(100) substrate. The experimental results show that by adding an amorphous Si layer with a certain thickness, the epitaxial quality of CoSi2 is significantly improved. A multi-element amorphous layer is formed by a solid state amorphization reaction at the initial stage of the multilayer reaction. This layer acts as a diffusion barrier, which controls the atomic interdiffusion of Co and Si and limits the supply of Co atoms. It has a vital effect on the multilayer reaction kinetics, and the epitaxial growth of CoSi2 on Si. The kinetics of the CoSi2 growth process from multilayer reactions is investigated.

The Influence Of Stress on The Growth of Titanium Silicide Thin Films on (001) Silicon Substrates

1999 ◽  
Vol 564 ◽  
Author(s):  
S. L. Cheng ◽  
S. M. Chang ◽  
H. Y. Huang ◽  
Y. C. Peng ◽  
L. J. Chen ◽  
...  
Keyword(s):  
Tensile Stress ◽  
Silicon Substrate ◽  
Function Analysis ◽  
Titanium Silicide ◽  
Nucleation Density ◽  
Silicon Substrates ◽  
Auto Correlation ◽  
Nucleation Sites ◽  
Auto Correlation Function ◽  
Ti Films

AbstractThe influence of stress on the enhanced formation of C54-TiSi2 phase has been investigated. Tensile stress induced by backside CoSi2 film on the silicon substrate has been found to enhance the growth of C54-TiSi2 on (001)Si. The thickness of amorphous interlayers (a-interlayers) between Ti films and silicon substrates was found to be thicker and thinner in the tensilly and compressively stressed samples, respectively. From auto-correlation function analysis, the thicker a-interlayer was found to consist of a higher density of crystallites. The crystallites provide nucleation sites for C49-TiSi2 and facilitate the formation of C49-TiSi2 of small size. The larger total area of C49-TiSi2 grain boundaries supplies more nucleation sites for the phase transformation of C49- to C54-TiSi2. Therefore, the tensile stress present in the silicon substrate promotes the formation of a-interlayer and decreases the grain size of C49- TiSi2, which increases the nucleation density of the C54-TiSi2 phase. As a result, the transformation of C49- to C54-TiSi2 phase is enhanced.

Interfacial Reactions and Thermal Stability of Ultrahigh Vacuum Deposited Multilayered Mo/Si Structures

1995 ◽  
Vol 382 ◽  
Author(s):  
J.M. Liang ◽  
L.J. Chen
Keyword(s):  
Thermal Stability ◽  
Function Analysis ◽  
Ultrahigh Vacuum ◽  
Interfacial Reactions ◽  
Silicide Phase ◽  
Transmission Electron ◽  
Bilayer Period ◽  
Auto Correlation Function ◽  
The Stability ◽  
Thermal Stability Of

ABSTRACTInterfacial reactions and thermal stability of ultrahigh vacuum deposited multilayered Mo/Si structures have been investigated by high resolution transmission electron microscopy in conjunction with fast Fourier transform and auto–correlation function analysis. For samples with nominal atomic ratios Mo:Si = 1:2 and 3:1, well defined multilayered Mo/Si structures were obtained after annealing at 250 °C for 30 min. On the other hand, distinct multilayered MoSi2/Si structure was formed only for Mo:Si = 1:2 samples after annealing at 650 °C for 1 h.Multiphases were observed to form simultaneously in samples annealed at 400–500 °C. After 650 °C annealing for 1 h, tetragonal MoSi2 was the only silicide phase observed for the Mo:Si = 1:2 samples, whereas both tetragonal and hexagonal MoSi2 were present in Mo:Si = 3:1 samples. The stability of the multilayered Mo/Si structures was found to depend critically on the atomic ratios of constituent elements, bilayer period and annealing conditions. The results are interpreted in terms of the delicate balance between intermixing of constituent atoms and silicide formation.

AUTHENTICATION OF PERSONAL COMPUTERS WITH UNSTABLE INTERNAL NOISE

2020 ◽  
pp. 569-574
Author(s):  
Elena Nyemkova
Keyword(s):  
Correlation Function ◽  
Form Factor ◽  
Electronic Devices ◽  
Internal Noise ◽  
Personal Computers ◽  
Electrical Noise ◽  
Auto Correlation ◽  
Auto Correlation Function ◽  
The Stability ◽  
Stability Area

The article is devoted to the study of the stability authentication signs of personal computers; possibility of authentication follows from their physical differences as complex electronic devices. This approach provides the ability to remotely automatic authentication in real time. The authentication template was calculated from the sequence of values of the auto-correlation function of the internal electrical noise. It was demonstrated that the noise instability of noise leads to the error in the computer authentication. In order to reduce the error's probability, it was proposed to use the form-factor of autocorrelation function histogram for automatic sorting of noise files. The character of the noise instability had allowed the use of several authentication templates for one computer with instable noise. Each template was designed for the separate stability area. The probability of false authentication was reduced by using two authentication templates for one computer with instable noise, it was 30%. The recommendations were made about determining the priority of access to confidential information for computer with instable noise.

HRTEM Study of the Interfacial Reactions of High-Temperature Sputtered Ti Thin Films on Preamorphized (001)Si

1999 ◽  
Vol 564 ◽  
Author(s):  
S. M Chang ◽  
H. Y Yang ◽  
H. Y Huang ◽  
L. J. Chen
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Room Temperature ◽  
Function Analysis ◽  
Interfacial Reactions ◽  
Simultaneous Presence ◽  
Auto Correlation ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Auto Correlation Function

AbstractInterfacial reactions of high-temperature sputtered Ti thin films on preamorphized (001)Si have been investigated by high-resolution transmission electron microscopy in conjunction with auto-correlation function analysis. Simultaneous presence of multiphases was found to occur in the amorphous TiSix layer at the Ti/Si interface. The enhanced transformation of C54-TiSi2 in high-temperature deposited samples is attributed to the more extensive presence of silicide crystallites, which serve as nucleation sites, in the a-TiSix layer than that in samples deposited at room temperature.

Sign in / Sign up

Export Citation Format

Share Document