Misfit Dislocations at Metal/Ceramics Interfaces

1993 ◽  
Vol 319 ◽  
Author(s):  
G. Gutekunst ◽  
J. Mayer ◽  
M. RÜHle
Keyword(s):  
Lattice Mismatch ◽  
High Resolution Electron Microscopy ◽  
Dislocation Network ◽  
Misfit Dislocations ◽  
Burgers Vector ◽  
Resolution Electron ◽  
Substrate Surfaces ◽  
Atomistic Structure ◽  
Good Agreement

AbstractThe atomistic structure of the coherent regions of Nb/A12O3-interfaces of various substrate orientations have been determined by high-resolution electron microscopy (HREM). The substrate surfaces were parallel to (0001)A12O3, (0110)A12O3, (2110)A12O3 and (0112)A12O3. In all cases, the Al sublattice of the A12O3 substrate is continued in the first Nb layer at the interface. This principle results in the unique orientation relationship.The Burgers vectors of the misfit dislocations and the geometry of the dislocation network of all Nb/A12O3-interfaces have been determined by HREM. All Burgers vectors are lattice vectors. Thus no coherent regions with different atomistic structures are found. The Burgers vectors are of the type 1/2<111>. These Burgers vectors correspond to the Burgers vector of bulk dislocations. All Burgers vector components which do not accommodate the lattice mismatch are compensated in the networks. The network geometry is rectangular for the following interface planes: (0110)A12O3||(112)Nb (orientation 2) and (0112)A12O3||(001)Nb. If the interface is parallel to (0001)A12O3 and (111)Nb the geometry is rhombic.The core structure of misfit dislocations of orientation 2 with line direction ξ1=[110] are calculated with an atomistic model and a continuum approach. The calculated core structures are in good agreement with the experimental HREM-micrographs of misfit dislocations of orientation 2.

HIGH RESOLUTION ELECTRON MICROSCOPE STUDY OF CdTe-Cd0.6Mn0.4 Te SUPERLATTICES

1985 ◽  
Vol 56 ◽  
Author(s):  
C. CHOI ◽  
N. OTSUKA ◽  
L. A. KOLODZIEJSKI ◽  
R. L. GUNSHOR-a
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Phase Contrast ◽  
Electron Microscope Study ◽  
Lattice Mismatch ◽  
Thick Layer ◽  
High Resolution Electron Microscopy ◽  
Misfit Dislocations ◽  
Resolution Electron ◽  
High Resolution Electron Microscope

AbstractStructures of CdTe-Cd0.6Mn0.4Te superlattices which are caused by the lattice mismatch between suterlattice layers have been studied by high resolution electron microscopy (HREM). In thin-layer superlattices, the crystal lattice in each layeris elastically distorted, resulting in the change of the crystal symmetry from cubic to rhombohedral. The presence of the small rhombohedral distrotion has been confirmed through a phase contrast effect in HREM images. In a thick-layer superlattice, the lattice mismatch is accommodated by dissociated misfit dislocations. Burgers vectors of partial misfit dislocations have been identified from the shift of lattice fringes in HREM images.

Misfit Dislocations at II-VI/GaAs Interfaces

1990 ◽  
Vol 183 ◽  
Author(s):  
A. F. Schwartzman
Keyword(s):  
Lattice Mismatch ◽  
High Resolution Electron Microscopy ◽  
Interfacial Structure ◽  
Misfit Dislocations ◽  
Extended Defects ◽  
Partial Dislocations ◽  
Resolution Electron ◽  
Before And After ◽  
Slip Planes ◽  
Efficient Type

AbstractHigh-resolution electron microscopy -is used to characterize the defect structure of CdTe/GaAs and ZnTe/GaAs heterojunctions before and after annealing. For as-deposited films, a variety of defects exist both in the form of perfect misfit dislocations at the interface and extended defects into the thin film. The extended defects result from dissociation of 60° dislocations and reactions between perfect and partial dislocations lying on intersecting slip planes. The annealed interfaces consist of a periodic array of perfect edge Lomer dislocations, the most efficient type of misfit dislocation for accomodating the lattice mismatch, 14.6 % for CdTe/GaAs and 8 % for ZnTe/GaAs. In both cases, the spacing between dislocations corresponds to the value predicted for completely strain-free thin fims, 31 and 54 Å for CdTe and ZnTe respectively. This paper concentrates on the different dislocation reactions which transform the interfacial structure from the as-deposited case to the annealed case.

Epitaxial Growth and Structure of Cubic and Pseudocubic Perovskite Films on Perovskite Substrates

1995 ◽  
Vol 401 ◽  
Author(s):  
P. A. Langjahr ◽  
T. Wagner ◽  
M. RÜhle ◽  
F. F. Lange
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
High Resolution Electron Microscopy ◽  
Lattice Parameter ◽  
Ternary Oxide ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Resolution Electron

AbstractCubic and pseudocubic perovskite films on perovskite substrates are used to study the influence of the lattice mismatch on the epitaxial growth of thin films on substrates of the same structure. For the growth of the films, a metalorganic decomposition route (MOD) using 2-ethylhexanoates and neodecanoates as precursors, was developed. The decomposition of the precursors was investigated with thermogravimetric analysis (TGA) and x-ray diffraction (XRD). The films were spin-coated on (001)-oriented SrTiO3- and LaAlO3-substrates, pyrolyzed and afterwards annealed between 600°C and 1200°C. XRD-nvestigations and conventional transmission electron microscopy (CTEM) show, that epitaxial films with the orientation relationship [100](001) film ║ [100](001) substrate can be grown. With XRD, it could be shown, that not only ternary oxide films (SrZrO3, BaZrO3 and BaCeO3), but also perovskite solid solution films (SrTi0.5Zr0.5O3and BaCe0.5Zr0.5O3) can be prepared. Strong interdiffusion, detected by a shift of the film lattice parameter towards the substrate lattice parameter was found in SrZrO3- and BaZrO3-films on SrTiO3, annealed at temperatures above 1050°C. High resolution electron microscopy (HREM) studies of SrZrO3 on SrTiO3 show that a crystalline semicoherent interface with a periodical array of misfit dislocations is present.

Relaxation of Metamorphic III-V Heterostructures Studied by Digital Processing of HREM Images

1998 ◽  
Vol 523 ◽  
Author(s):  
André Rocher ◽  
Etienne Snoeck ◽  
Léon Goldstein ◽  
Joël Jacquet ◽  
Catherine Fortin
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Transition Zone ◽  
Epitaxial Layer ◽  
Digital Processing ◽  
High Resolution Electron Microscopy ◽  
Dislocation Network ◽  
Misfit Dislocations ◽  
Misfit Stress ◽  
Resolution Electron

AbstractThe crystalline structure of metamorphic heterostructures grown by epitaxy has been studied by digital processing of High Resolution Electron Microscopy (HREM) images. Two systems have been investigated: the GaSb/(001)GaAs, known to be fully relaxed by a perfect Lomer dislocation network and the GaAs/(001)InP relaxed by partial and 60° dislocations randomly distributed. A transition zone can be defined between the perfect substrate and the relaxed epitaxial layer: its thickness is less than 20Å in GaSb/GaAs and more than 80Å in GaAs/InP. These results indicate that the misfit dislocations are only one of the elements involved in the relaxation of misfit stress.

Microstructure and Phase Stability Studies on Heusler Phase Ni2AlHf and G-phase Ni16Hf6Si7 in Directionally Solidified NiAl–Cr(Mo) Eutectic Alloyed with Hf

2000 ◽  
Vol 15 (6) ◽  
pp. 1261-1270 ◽  
Author(s):  
Y. X. Chen ◽  
C. Y. Cui ◽  
Z. Q. Liu ◽  
L. L. He ◽  
J. T. Guo ◽  
...  
Keyword(s):  
Hot Isostatic Pressing ◽  
Aging Treatment ◽  
High Resolution Electron Microscopy ◽  
Boundary Region ◽  
Dislocation Network ◽  
Directionally Solidified ◽  
Heusler Phase ◽  
Resolution Electron ◽  
Good Agreement ◽  
Nial Matrix

Small additions of Hf to directionally solidified NiAl–Cr(Mo) eutectic resulted in precipitation of a high density of Heusler phase Ni2AlHf along with fine G-phase Ni16Hf6Si7. The Heusler phase was mainly located on the grain boundary region. The fine G-phase formed in the presence of Si, which was a contamination resulting from contact with ceramic shell molds during directional solidification of the alloy. These fine G-phases were cuboidal in shape and coherent with the NiAl matrix. After hot isostatic pressing and aging treatment, the fine G-phases completely disappeared. The density of the Heusler phase was partially reduced, and the Heusler particles precipitated preferentially on the NiAl/Cr(Mo) interfaces and grain boundaries of the NiAl matrix. Some Heusler particles precipitated locally within the NiAl matrix, and small amounts of them precipitated within the Cr(Mo) phase. The structures of the NiAl/Ni2AlHf and NiAl/Ni16Hf6Si7 interfaces were investigated by high-resolution electron microscopy. The habit plane of the fine G-phase was {001}NiAl. This result was in good agreement with calculation based on the linear elastic theory. The misfit dislocation network on the NiAl/Ni2AlHf (110) interface was calculated from the O-lattice model and compared with the observation, which showed good agreement.

EPITAXY OF CdTe ON (100) GaAs

1985 ◽  
Vol 56 ◽  
Author(s):  
L. A. KOLODZIEJSKI ◽  
R. L. GUNSHOR ◽  
N. OTSUKA ◽  
C. CHOI
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Strong Interaction ◽  
Gaas Substrate ◽  
Specific Growth ◽  
Lattice Mismatch ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Selection Of

AbstractTwo epitaxial orientations [(111) and (100)] of CdTe are grown on (100) GaAs in the presence of a 14.6% lattice mismatch. Consistent nucleation of a selected orientation is achieved by employing specific growth techniques. The growth techniques for selection of both orientations are described. High resolution electron microscopy has been used to investigate the interface between the CdTe epilayer and the GaAs substrate. For the (111) orientation strong interaction exists between the epitaxial deposit and the substrate, whereas a weakened interaction between deposit and substrate induces the (100) orientation.

In-Situ Studies of Epitaxial Thin-Film Growth

1964 ◽  
Vol 19 (7-8) ◽  
pp. 835-843 ◽  
Author(s):  
H. Poppa
Keyword(s):  
Film Growth ◽  
High Resolution Electron Microscopy ◽  
Thin Film Growth ◽  
Continuous Observation ◽  
Epitaxial Thin Film ◽  
Epitaxial Thin Film Growth ◽  
Resolution Electron ◽  
Substrate Surfaces ◽  
Kinetics Of

Early stages of oriented overgrowth of Ag, Au, and Pd on thin, single-crystal substrates of mica, molybdenite, Au and Pd were studied by high-resolution electron microscopy and diffraction. Cleaning of substrate surfaces and deposition of evaporated materials were conducted inside an electron microscope. High-magnification, continuous observation during growth permitted investigation of the kinetics of growth. A number of probably elementary epitaxial processes were studied in detail. Nucleation and growth behavior was examined for different supersaturations and free surface energies of substrate and overgrowth materials. The influence of alloying on growth and the spacing of parallel moiré structures was investigated.

Observation of GaAs/Si Epitaxial Interfaces by Atomic Resolution Electron Microscopy

1986 ◽  
Vol 67 ◽  
Author(s):  
N. Otsuka ◽  
C. Choi ◽  
Y. Nakamura ◽  
S. Nagakura ◽  
R. Fischer ◽  
...  
Keyword(s):  
Substrate Surface ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Si Substrates ◽  
Voltage Electron ◽  
Resolution Electron ◽  
Gaas Films ◽  
Substrate Surfaces

ABSTRACTRecent studies have shown that high quality GaAs films can be grown by MBE on Si substrates whose surfaces are slightly tilted from the (100) plane. In order to investigate the effect of the tilting of substrate surfaces on the formation of threading dislocations, the GaAs/Si epitaxial interfaces have been observed with a 1 MB ultra-high vacuum, high voltage electron microscope. Two types of misfit dislocations, one with Burgers vectors parallel to the interface and the other with Burgers vectors inclined from the interface, were found in these epitaxial interfaces. The observation of crosssectional samples perpendicular to each other has shown that the tilting of the substrate surface directly influences the generation of these two types of misfit dislocations. The mechanism of the reduction of threading dislocations by the tilting of the substrate surface is discussed based on these observations.

High-resolution electron microscopy of epitaxial YBCO/Y2O3/YSZ on Si(001)

1993 ◽  
Vol 8 (9) ◽  
pp. 2112-2127 ◽  
Author(s):  
A. Bardal ◽  
O. Eibl ◽  
Th. Matthée ◽  
G. Friedl ◽  
J. Wecker
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Thick Layer ◽  
Atomic Layer ◽  
High Resolution Electron Microscopy ◽  
Stacking Fault ◽  
Buffer Layers ◽  
Misfit Dislocations ◽  
Resolution Electron ◽  
Unit Cells

The microstructures of YBa2Cu3O7−δ (YBCO) thin films grown on Si with Y-stabilized ZrO2 (YSZ) and Y2O3 buffer layers were characterized by means of high-resolution electron microscopy. At the Si–YSZ interface, a 2.5 nm thick layer of regrown amorphous SiOx is present. The layer is interrupted by crystalline regions, typically 5 to 10 nm wide and 10 to 50 nm apart. Close to the crystalline regions, {111} defects are present in the Si substrate. The typical defect observed is an extrinsic stacking fault plus a perfect dislocation close to the stacking fault which terminates extra {111} planes in the upper part of the Si. These defects are probably formed by condensation of Si self-interstitials created during oxide regrowth. Precipitates are present in the Si close to the Si–YSZ interface and indicate that in-diffusion of Zr has occurred. The YSZ–Y2O3 interface is atomically sharp and essentially planar and contains no second phases. Perfect misfit dislocations with Burgers vector 1/2〈110〉 are present at this interface along with unrelaxed elastic misfit stresses. The Y2O3–YBCO interface is atomically sharp and planar, but contains steps. (001) stacking faults are present in the YBCO above these steps; the faults are, however, healed a few unit cells away from the interface. By HREM analysis of ultrathin specimen areas, the atomic layer of the YBCO closest to the Y2O3 was found to be a barium-oxygen layer.

Strain Relaxation in GaN/AlN Films Grown on Vicinal and On-Axis SiC Substrates

2006 ◽  
Vol 527-529 ◽  
pp. 1513-1516
Author(s):  
J. Bai ◽  
X. Huang ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
B. Wagner ◽  
...  
Keyword(s):  
High Resolution ◽  
Lattice Mismatch ◽  
Strain Relaxation ◽  
Crystalline Quality ◽  
Misfit Dislocations ◽  
Vicinal Surface ◽  
Burgers Vector ◽  
Surface Steps ◽  
Transmission Electron ◽  
Initial Stage

Strain relaxation in the GaN/AlN/6H-SiC epitaxial system grown by vicinal surface epitaxy (VSE) is investigated and compared with that in on-axis epitaxy. High resolution x-ray diffraction (HRXRD) measurements show that GaN films grown by VSE have improved crystalline quality. High resolution transmission electron microscope (HRTEM) studies reveal that there are two types of misfit dislocations (MDs) at AlN/6H-SiC interfaces: 60˚ complete dislocations along <1120 > directions with Burgers vector 1/3<1120 > and 60˚ Shockley partials along <10 10 > directions with Burgers vector 1/3<10 10 >. The latter are usually geometrical partial misfit dislocations (GPMDs) that are dominant in VSE to accommodate the lattice mismatch and stacking sequence mismatch simultaneously. In VSE, it is the high-density GPMDs formed at the vicinal surface steps that facilitate rapid strain relaxation at the initial stage of deposition and hence lead to superior crystalline quality of the subsequently grown GaN films.

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