Growth and characterization of undoped andinsitudoped Si1−xGexon patterned oxide Si substrates by very low pressure chemical vapor deposition at 700 and 625 °C

1991 ◽  
Vol 69 (12) ◽  
pp. 8158-8163 ◽  
Author(s):  
Curtis Tsai ◽  
Syun‐Ming Jang ◽  
Julie Tsai ◽  
Rafael Reif
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Si Substrates ◽  
Pressure Chemical

scholarly journals Characterization of TiN film grown by low-pressure-chemical-vapor-deposition

1997 ◽  
Vol 308-309 ◽  
pp. 594-598 ◽  
Author(s):  
Y.J Mei ◽  
T.C Chang ◽  
J.C Hu ◽  
L.J Chen ◽  
Y.L Yang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Tin Film ◽  
Pressure Chemical

Preparation and characterization of CrO2 films by Low Pressure Chemical Vapor Deposition from CrO3

2013 ◽  
Vol 539 ◽  
pp. 1-11 ◽  
Author(s):  
C. Aguilera ◽  
J.C. González ◽  
A. Borrás ◽  
D. Margineda ◽  
J.M. González ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

Properties of Single-Crystalline SiC Films Grown on Si by Low-Pressure Chemical Vapor Deposition at 750°C

1992 ◽  
Vol 282 ◽  
Author(s):  
I. Golecki ◽  
J. Marti ◽  
F. Reidinger
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Double Crystal ◽  
X Ray ◽  
Si Substrates ◽  
Pressure Chemical ◽  
Means Of Transmission ◽  
Sic Films

ABSTRACTMonocrystalline, epitaxial cubic (100) SiC films have been grown on (100) Si substrates at 750°C, the lowest temperature reported to date, by low-pressure chemical vapor deposition, using methylsilane, SiCH3H3, a single precursor with a Si:C ratio of 1:1, and H2. Hexagonal SiC films were obtained with the aid of a remote H2 plasma, which also increased the deposition rate through a reduction in the activation enthalpy. The films were characterized by means of transmission electron microscopy, single- and double-crystal X-ray diffraction, infra-red absorption, ellipsometry, thickness measurements, four-point probe measurements, and other methods. Based on X-ray diffractometry, the crystalline quality of our β-SiC films is equivalent to that of commercial films of similar thickness. We describe the novel growth apparatus and the properties of the films.

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