Atomic structure of the diamond (100) surface studied using scanning tunneling microscopy

1996 ◽  
Vol 14 (2) ◽  
pp. 929 ◽  
Author(s):  
R. E. Stallcup II
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Atomic Structure ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Direct Imaging Using Scanning Tunneling Microscopy of the Atomic Structure in Amorphous Co1-xPx

1992 ◽  
pp. 348-355
Author(s):  
J. M. Gonzalez ◽  
F. Cebollada ◽  
M. Vazquez ◽  
M. Aguilar ◽  
M. Pancorbo ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Atomic Structure ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Direct Imaging

Atomic structure of tip apex for spin-polarized scanning tunneling microscopy

2011 ◽  
Vol 98 (8) ◽  
pp. 082505 ◽  
Author(s):  
G. Rodary ◽  
J.-C. Girard ◽  
L. Largeau ◽  
C. David ◽  
O. Mauguin ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Atomic Structure ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Spin Polarized

Atomic Structure of Si(553) Surface Revealed by Scanning Tunneling Microscopy

2008 ◽  
Vol 47 (7) ◽  
pp. 6102-6104 ◽  
Author(s):  
Shinsuke Hara ◽  
Masamichi Yoshimura ◽  
Kazuyuki Ueda
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Atomic Structure ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Atomic Structure of the Domain Walls of the Discommensurate Phases in Ge(111)/Ga

1998 ◽  
Vol 05 (01) ◽  
pp. 175-179 ◽  
Author(s):  
Zheng Gai ◽  
Bo Gao ◽  
Hang Ji ◽  
R. G. Zhao ◽  
W. S. Yang
Keyword(s):  
Domain Wall ◽  
Scanning Tunneling Microscopy ◽  
Atomic Structure ◽  
Domain Walls ◽  
Scanning Tunneling ◽  
Wall Structure ◽  
Tunneling Microscopy ◽  
Domain Wall Structure ◽  
Stm Images

We have studied the γ and β discommensurate phases of the Ge(111)/Ga system with scanning tunneling microscopy (STM). On the basis of the features of these phases known from our STM images as well as from previous papers, models of domain-wall structure of both phases have been proposed for further investigations.

Atomic Structure of Si(100) Surfaces

1998 ◽  
Vol 05 (01) ◽  
pp. 1-4 ◽  
Author(s):  
Ja-Yong Koo ◽  
Jae-Yel Yi ◽  
Chanyong Hwang ◽  
Dal-Hyun Kim ◽  
Sekyung Lee ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Surface Structure ◽  
Atomic Structure ◽  
Scanning Tunneling ◽  
Clean Surface ◽  
Tunneling Microscopy ◽  
Vacancy Clusters ◽  
Lower Terrace ◽  
Vacancy Density

The structure of a clean Si(100) and a Ni-contaminated si(100) was investigated using scanning tunneling microscopy. The clean Si (100) shows the 2 × 1 reconstruction with a surface dimer vacancy density less than 2%. The major defects on the clean surface are a single dimer vacancy and the C defect. A small amount of Ni on the surface drastically changes the surface structure and produces 2 × n reconstructions. The formation of vacancy clusters is favored. A rebonded SB step is preferred on the clean Si(100) while a nonrebonded SB step with a split-off dimer is mainly observed on the Ni-contaminated Si(100) and in the vicinity of dimer vacancies of the lower terrace on the clean Si(100).

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