Characterization of InxGa1−xAs/GaAs strained‐layer superlattices by transmission electron microscopy and convergent beam electron diffraction

1992 ◽  
Vol 61 (5) ◽  
pp. 572-574 ◽  
Author(s):  
X. L. Wei ◽  
K. K. Fung ◽  
W. Feng ◽  
J. M. Zhou
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Strained Layer ◽  
Transmission Electron ◽  
Strained Layer Superlattices ◽  
Convergent Beam

Characterization Of APB's In GaP

1996 ◽  
Vol 442 ◽  
Author(s):  
Dov Cohen ◽  
C. Barry Carter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Convergent Beam Electron Diffraction ◽  
Antiphase Boundaries ◽  
Beam Electron ◽  
Transmission Electron ◽  
Convergent Beam ◽  
Crystallographic Orientations

AbstractAntiphase boundaries in GaP crystals epitactically grown on Si (001) have been characterized using transmission electron microscopy. Convergent-beam electron diffraction was used to identify the antiphase-related grains. The antiphase boundaries were observed to adopt facets parallel to specific crystallographic orientations. Furthermore, stacking-fault-like contrast was observed along the interface suggesting that the domains may be offset from one another by a rigid-body lattice translation.

Detection of Characteristic Signals from As-Doped (less than 1 at.%) Regions of Silicon by Transmission Electron Microscopy and Convergent-beam Electron Diffraction

2004 ◽  
Vol 10 (S02) ◽  
pp. 338-339
Author(s):  
Masami Terauchi ◽  
Kenji Tsuda ◽  
Hajime Mitsuishi ◽  
Kazuo Kawamura
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Transmission Electron ◽  
Convergent Beam

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

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