Dynamic Scaling of the Island-Size Distribution and Percolation in a model of Sub-Monolayer Molecular Beam Epitaxy

1993 ◽  
Vol 317 ◽  
Author(s):  
Jacques G. Amar ◽  
Fereydoon Family ◽  
Pui-Man Lam
Keyword(s):  
Molecular Beam Epitaxy ◽  
Size Distribution ◽  
Molecular Beam ◽  
Pair Correlation ◽  
Dendritic Structure ◽  
Square Lattice ◽  
Dynamic Scaling ◽  
Island Size ◽  
Monomer Density ◽  
Low Coverage

ABSTRACTThe results of a detailed study of the scaling and percolation behavior of the sub-Monolayer in a model of molecular beam epitaxy are presented. In our model adatoms are randomly deposited on a square lattice and then allowed to diffuse. Whenever an adatom encounters another adatom or an island, it is attached to them and becomes immobile. We have found and studied four distinct scaling regimes, corresponding to a low-coverage (nucleation) regime, intermediate-coverage regime, an aggregation regime, and coalescence and percolation regime. At low coverage the islands have a dendritic structure such as seen in Au/Ru (0001) while at higher coverages they become compact. The scaling of the cluster fractal dimension, island density, Monomer density, island size distribution, and structure factor and pair-correlation function are studied as a function of the coverage θ and the ratio R = D /F of the diffusion rate to the deposition rate.

Computer Simulation of the Early Stages of Nano Scale SiC Growth on Si

2005 ◽  
Vol 483-485 ◽  
pp. 169-172
Author(s):  
K.L. Safonov ◽  
Yuri V. Trushin ◽  
Oliver Ambacher ◽  
Jörg Pezoldt
Keyword(s):  
Computer Simulation ◽  
Silicon Carbide ◽  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Size Distribution ◽  
Rate Equation ◽  
Molecular Beam ◽  
Carbon Fluxes ◽  
Island Size ◽  
Nano Scale

Solid source molecular beam epitaxy was applied to create silicon carbide nanoclusters on silicon. The island size distribution can be controlled by an appropriate substrate temperature, carbon fluxes and process times. Rate equation computer simulation was applied to simulate the experimental obtained nano scale nuclei properties.

Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular beam epitaxy

1997 ◽  
Vol 71 (24) ◽  
pp. 3543-3545 ◽  
Author(s):  
Xun Wang ◽  
Zui-min Jiang ◽  
Hai-jun Zhu ◽  
Fang Lu ◽  
Daming Huang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Size Distribution ◽  
Molecular Beam ◽  
Uniform Size ◽  
Highly Uniform ◽  
Uniform Size Distribution

Shape and Size Distribution of Molecular Beam Epitaxy Grown Self-Assembled Ge Islands on Si (001) Substrates

2008 ◽  
Vol 8 (8) ◽  
pp. 4101-4105
Author(s):  
R. K. Singha ◽  
S. Das ◽  
K. Das ◽  
S. Majumdar ◽  
A. Dhar ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Size Distribution ◽  
Molecular Beam ◽  
Alloy Composition ◽  
Strain Relaxation ◽  
X Ray ◽  
Compositional Changes ◽  
Annealing Experiments ◽  
Shape And Size ◽  
Good Agreement

We have performed a series of annealing experiments with Ge islands on Si (001) grown by molecular beam epitaxy, in order to clarify issues related to island stability and coarsening. The shape and size distribution of nanoislands as a function of annealing time at a temperature of 650 °C have been studied. Optical phonons from Raman spectra have been used as efficient probes to study the evolution of Si1−xGex islands. Both the alloy composition and residual strain in the islands have been determined from the phonon frequencies and Raman intensities. The experimental results are in good agreement with the strain relaxation estimated using X-ray rocking curves. The results indicate that the shape and size distribution of Ge islands are controlled via structural and compositional changes through strain relaxation by the periodic creation and extinction of tiny nanocrystals.

In–Mole-Fraction and Thickness of Ultra-Thin InGaAs Insertion Layers Effects on the Structural and Optical Properties of InAs Quantum Dots

2007 ◽  
Vol 31 ◽  
pp. 132-134
Author(s):  
P. Boonpeng ◽  
S. Panyakeow ◽  
S. Ratanathammaphan
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Size Distribution ◽  
Mole Fraction ◽  
Molecular Beam ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots ◽  
Pl Spectrum

InAs quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on different InxGa1-xAs (0 ≤ x ≤ 0.3) to investigate the effect of In-mole-fraction and thickness of InGaAs insertion layer (IL) on the structural and optical properties of the QDs. The density of QDs directly grown on GaAs is 1×1010 cm-2, and increase to 1.4-1.8×1010 cm-2 on InGaAs layers which depend on the In-mole-fraction and thickness of InGaAs layers. The effects of In-mole-fraction and thickness of InGaAs insertion layer on optical properties of the QDs are studied by photoluminescence (PL). The FWHM of PL spectrum corresponds to the size distribution of the QDs.

SCALING APPROACH TO ANOMALOUS SURFACE ROUGHENING OF THE (d+1)-DIMENSIONAL MOLECULAR-BEAM EPITAXY GROWTH EQUATIONS

2006 ◽  
Vol 20 (30) ◽  
pp. 1935-1941 ◽  
Author(s):  
HUI XIA ◽  
GANG TANG ◽  
KUI HAN ◽  
DA-PENG HAO ◽  
HUA CHEN ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Surface Roughening ◽  
Dynamic Scaling ◽  
Scaling Analysis ◽  
Local Fluctuations ◽  
Standard Family ◽  
Anomalous Surface ◽  
Growth Equations

To determine anomalous dynamic scaling of continuum growth equations, López12 proposed an analytical approach, which is based on the scaling analysis introduced by Hentschel and Family.15 In this work, we generalize this scaling analysis to the (d+1)-dimensional molecular-beam epitaxy equations to determine their anomalous dynamic scaling. The growth equations studied here include the linear molecular-beam epitaxy (LMBE) and Lai–Das Sarma–Villain (LDV). We find that both the LMBE and LDV equations, when the substrate dimension d>2, correspond to a standard Family–Vicsek scaling, however, when d<2, exhibit anomalous dynamic roughening of the local fluctuations of the growth height. When the growth equations exhibit anomalous dynamic scaling, we obtain the local roughness exponents by using scaling relation α loc =α-zκ, which are consistent with the corresponding numerical results.

Dynamic scaling of island-size distribution in submonolayer growth of 1×1 films

1994 ◽  
Vol 50 (15) ◽  
pp. 11116-11120 ◽  
Author(s):  
Q. Jiang ◽  
A. Chan ◽  
G.-C. Wang
Keyword(s):  
Size Distribution ◽  
Dynamic Scaling ◽  
Island Size

Dynamic Scaling, Island Size Distribution, and Morphology in the Aggregation Regime of Submonolayer Pentacene Films

2003 ◽  
Vol 91 (13) ◽  
Author(s):  
Ricardo Ruiz ◽  
Bert Nickel ◽  
Norbert Koch ◽  
Leonard C. Feldman ◽  
Richard F. Haglund ◽  
...  
Keyword(s):  
Size Distribution ◽  
Dynamic Scaling ◽  
Island Size
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