Evolution of Roughness on InP Layers Observed by Scanning Force Microscopy

1993 ◽  
Vol 312 ◽  
Author(s):  
M. A Cotta ◽  
R. A Hamm ◽  
S. N. G Chu ◽  
T. W Staley ◽  
L. R Harriott ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Scanning Force Microscopy ◽  
Two Dimensional ◽  
Group Iii ◽  
Force Microscopy ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Scanning Force ◽  
Dimensional Growth

AbstractThe evolution of surface roughness with increasing thickness of (100) InP layersgrown by metalorganic molecular beam epitaxy has been observed by scanningforce microscopy. The process of roughening gives rise to periodic elongatedfeatures on the surface aligned in the [011] direction, reflecting the surfaceanisotropy. The morphology eventually evolves to a grain-like surface. Theroughening is dependent on both the group III and V flux, and the growthtemperature, indicating that this phenomenon is kinetically controlled by surfacediffusion activation. For each set of parameters chosen for the growth, there is aminimum temperature where smooth, two-dimensional growth can be obtained.Below that temperature the roughening shows two distinct power law regimesdependent on the epitaxial layer thickness.

Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy

1997 ◽  
Vol 26 (11) ◽  
pp. 1266-1269 ◽  
Author(s):  
J. D. Mackenzie ◽  
L. Abbaschian ◽  
C. R. Abernathy ◽  
S. M. Donovan ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Plasma Characteristics

GaSb layers with low defect density deposited on (001) GaAs substrate in two-dimensional growth mode using molecular beam epitaxy

2019 ◽  
Vol 19 (4) ◽  
pp. 542-547
Author(s):  
Agata Jasik ◽  
Iwona Sankowska ◽  
Andrzej Wawro ◽  
Jacek Ratajczak ◽  
Dariusz Smoczyński ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Defect Density ◽  
Growth Mode ◽  
Two Dimensional ◽  
Dimensional Growth

scholarly journals Dielectric Function of AlN Grown on Si (111) by MBE

1999 ◽  
Vol 572 ◽  
Author(s):  
Stefan Zollner ◽  
Atul Konkar ◽  
R. B. Gregory ◽  
S. R. Wilson ◽  
S. A. Nikishin ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Buffer Layers ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
Growth Morphology ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dimensional Growth ◽  
Peak Widths

ABSTRACTWe measured the ellipsometric response from 0.7–5.4 eV of c-axis oriented AlN on Si (111) grown by molecular beam epitaxy. We determine the film thicknesses and find that for our AlN the refractive index is about 5–10% lower than in bulk AlN single crystals. Most likely, this discrepancy is due to a low film density (compared to bulk AlN), based on measurements using Rutherford backscattering. The films were also characterized using atomic force microscopy and x-ray diffraction to study the growth morphology. We find that AlN can be grown on Si (111) without buffer layers resulting in truely two-dimensional growth, low surface roughness, and relatively narrow x-ray peak widths.

Growth of Germanium on Porous Silicon (001)

1996 ◽  
Vol 452 ◽  
Author(s):  
W. H. Thompson ◽  
Z. Yamani ◽  
H. M. Nayfeh ◽  
M.-A. Hasan ◽  
J. E. Greene ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Porous Silicon ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Porous Si ◽  
Force Microscopy ◽  
Atomic Force ◽  
Nm Range

AbstractThe surface morphology of Ge grown on Si (001) and porous Si(001) by molecular beam epitaxy at 380 °C is examined using atomic force microscopy (AFM). For layer thicknesses of 30 nm, the surface shows islanding while still maintaining some of the underlying roughness of the surface of porous Si. For thicknesses in the 100 nm range, the surface roughness is not visible, but the islanding persists. Unlike the case of silicon where islands tend to merge and nearly disappear as the thickness of the deposited layer rises, we observe on the porous layer the persistence of the islands with no merging even for macroscopic thicknesses as large as 0.73 microns.

Growth of Quaternary AlInGaN/GaN Heterostructures by Plasma Assisted MBE

2002 ◽  
Vol 743 ◽  
Author(s):  
E. Monroy ◽  
N. Gogneau ◽  
D. Jalabert ◽  
F. Enjalbert ◽  
E. Bellet-Amalnc ◽  
...  
Keyword(s):  
Binding Energy ◽  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Mole Fraction ◽  
Molecular Beam ◽  
Growth Front ◽  
Two Dimensional ◽  
High Binding Energy ◽  
Dimensional Growth

ABSTRACTEpitaxial growth of quaternary AlGalnN compounds by plasma-assisted molecular beam epitaxy has been demonstrated. Two-dimensional growth is achieved under In excess, with a monolayer of In segregating at the growth front. The maximum In incorporation is significantly affected by the substrate temperature and the Al mole fraction of the alloy. This behavior has been attributed to the enhancement of In segregation due to the high binding energy of A1N compared to InN and GaN.

Scanning force microscopy of two-dimensional structure formation in thin humic acid films

2002 ◽  
Vol 33 (2) ◽  
pp. 113-117 ◽  
Author(s):  
Michael Mertig ◽  
Denis Klemm ◽  
Harald Zänker ◽  
Wolfgang Pompe
Keyword(s):  
Humic Acid ◽  
Structure Formation ◽  
Scanning Force Microscopy ◽  
Dimensional Structure ◽  
Two Dimensional ◽  
Force Microscopy ◽  
Scanning Force
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