GaSb layers with low defect density deposited on (001) GaAs substrate in two-dimensional growth mode using molecular beam epitaxy

2019 ◽  
Vol 19 (4) ◽  
pp. 542-547
Author(s):  
Agata Jasik ◽  
Iwona Sankowska ◽  
Andrzej Wawro ◽  
Jacek Ratajczak ◽  
Dariusz Smoczyński ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Defect Density ◽  
Growth Mode ◽  
Two Dimensional ◽  
Dimensional Growth

Highly flat GexSi1−x/Si heterointerfaces grown by molecular beam epitaxy in two-dimensional growth mode

Vacuum ◽  
1992 ◽  
Vol 43 (11) ◽  
pp. 1035-1037 ◽  
Author(s):  
X Wei ◽  
GL Zhou ◽  
TC Zhou ◽  
C Sheng ◽  
MR Yu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Mode ◽  
Two Dimensional ◽  
Dimensional Growth

ECR-MBE and GSMBE of Gallium nitride on Si(111)

1995 ◽  
Vol 395 ◽  
Author(s):  
U. Rossner ◽  
J.-L. Rouviere ◽  
A. Bourret ◽  
A. Barski
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
High Energy ◽  
Emission Peak ◽  
Growth Mode ◽  
Cross Sectional ◽  
Dimensional Growth

ABSTRACTElectron Cyclotron Resonance Plasma Assisted Molecular Beam Epitaxy (ECR-MBE) and Gas Source Molecular Beam Epitaxy (GSMBE) have been used to grow hexagonal GaN on Si (111). In the ECR-MBE configuration high purity nitrogen has been used as nitrogen source. In GSMBE ammonia was supplied directly to the substrate to be thermally cracked in the presence of gallium.By a combined application of in-situ reflection high-energy electron-diffraction (RHEED) and cross-sectional transmission electron microscopy (TEM) the growth mode and structure of GaN were determined. The growth mode strongly depends on growth conditions. Quasi two dimensional growth was observed in ECR-MBE configuration for a substrate temperature of 640°C while three dimensional growth occured in GSMBE configuration in the temperature range from 640 to 800°C.Low temperature (9 K) photoluminescence spectra show that for samples grown by ECR-MBE and GSMBE a strong near band gap emission peak dominates while transitions due to deep level states are hardly detectable. The best optical results (the highest near band gap emission peak intensity) have been observed for samples grown by GSMBE at high temperature (800°C). This could be explained by the increase of grain dimensions (up to 0,3 – 0,5 μm) observed in samples grown by GSMBE at 800°C.

Growth of Quaternary AlInGaN/GaN Heterostructures by Plasma Assisted MBE

2002 ◽  
Vol 743 ◽  
Author(s):  
E. Monroy ◽  
N. Gogneau ◽  
D. Jalabert ◽  
F. Enjalbert ◽  
E. Bellet-Amalnc ◽  
...  
Keyword(s):  
Binding Energy ◽  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Mole Fraction ◽  
Molecular Beam ◽  
Growth Front ◽  
Two Dimensional ◽  
High Binding Energy ◽  
Dimensional Growth

ABSTRACTEpitaxial growth of quaternary AlGalnN compounds by plasma-assisted molecular beam epitaxy has been demonstrated. Two-dimensional growth is achieved under In excess, with a monolayer of In segregating at the growth front. The maximum In incorporation is significantly affected by the substrate temperature and the Al mole fraction of the alloy. This behavior has been attributed to the enhancement of In segregation due to the high binding energy of A1N compared to InN and GaN.

Optimized Molecular Beam Epitaxy Structures for GaAs on Silicon Photodetectors

1989 ◽  
Vol 158 ◽  
Author(s):  
A. Christou ◽  
N.A. Papanicolaou ◽  
G.W. Anderson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Doping Concentration ◽  
Molecular Beam ◽  
Two Dimensional ◽  
Dimensional Growth

ABSTRACTTwo dimensional growth of GaAs on silicon has been achieved by modulation molecular beam epitaxy (where the arsenic beam is pulsed) with laser assistance at 308 nm (LAMBE). Photoconductive, low doping concentration layers were utilized for metal-semiconductormetal photodetectors which were evaluated at 840 nm.

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