Phase equilibria and liquid‐phase‐epitaxy growth of PbSnSeTe lattice‐matched to PbSe

1987 ◽  
Vol 62 (7) ◽  
pp. 2994-3000 ◽  
Author(s):  
Patrick J. McCann ◽  
Jacob Fuchs ◽  
Ze’ev Feit ◽  
Clifton G. Fonstad
1983 ◽  
Vol 31 ◽  
Author(s):  
O. Ueda ◽  
S. Isozumi ◽  
S. Komiya ◽  
T. Kusunoki ◽  
I. Umebu

ABSTRACTDefects in InGaAsP and InGaP crystals lattice-matched to (001)-oriented GaAs substrate successfully grown by liquid phase epitaxy, have been investigated by TEM and STEM/EDX. Typical defects observed by TEM are composition-modulated structures, dislocation loops, non-structural microdefects, and stacking faults.


1981 ◽  
Vol 10 (5) ◽  
pp. 863-878 ◽  
Author(s):  
Dumrong Kasemset ◽  
Shlomo Rotter ◽  
Clifton G. Fonstad

1984 ◽  
Vol 66 (3) ◽  
pp. 547-552 ◽  
Author(s):  
A.N. Baranov ◽  
S.G. Konnikov ◽  
T.B. Popova ◽  
V.E. Umansky ◽  
Yu.P. Yakovlev

1987 ◽  
Vol 80 (2) ◽  
pp. 298-306 ◽  
Author(s):  
A.T. Gorelenok ◽  
V.V. Kuznetsov ◽  
P.P. Moskvin ◽  
V.S. Sorokin

1990 ◽  
Vol 68 (11) ◽  
pp. 5936-5938 ◽  
Author(s):  
E. Tournié ◽  
J.‐L. Lazzari ◽  
F. Pitard ◽  
C. Alibert ◽  
A. Joullié ◽  
...  

1993 ◽  
Vol 311 ◽  
Author(s):  
Patrick J. Mccann

ABSTRACTIV-VI semiconductor Pb1−xsSnxsSe1−ysTeys quaternary alloys were grown on (111) BaF2 by liquid phase epitaxy (LPE). X-ray diffraction analysis shows that liquid (Pb1−x1Snx1)0.99(Se1−y1Tey1)0.01 solutions produce alloys lattice-matched with the substrate wheny1 = 60%, 58%, and 57%, and x1 = 20%, 40%, and 60%, respectively. These data suggest that the chemical potential of tellurium in the Pb1−xsSnxsSe1−ysTeys solid solution decreases as tin and tellurium concentrations increase. It is argued that this reduction is due to decreasing strain energy driven segregation of tellurium from the solid to the liquid as the tin concentration increases.


2001 ◽  
Vol 15 (17n19) ◽  
pp. 651-654
Author(s):  
TATIANA A. PRUTSKIJ ◽  
PEDRO DÍAZ ARENCIBIA ◽  
ALEXANDER MINTAIROV ◽  
JAMES MERZ ◽  
THOMAS H. KOSEL

We make a comparative study of the optical and structural characteristics of two InxGa1-xP(x≈0.5 ) films nearly lattice matched to GaAs, (here referred to as disordered type 1 sample (S1) and ordered type 2 sample (S2)). The films were grown by liquid phase epitaxy (LPE). Photoluminescence (PL) measurements were performed in a wide temperature and exciting power density range for different polarization of the emitted radiation along the [110] and [1-10] directions. Observations suggest that the InxGa1-xP layer in sample 1 is disordered, as commonly obtained in LPE growth, while in sample 2 at least a partially spontaneously ordered layer was obtained. Moreover, the energy position of the 20 K PL peak is close to the predicted band gap energy for the InGaP 2 material ordered in the CuPt phase. [1].


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