The Effect of Annealing on the Cu Distribution and AI2Cu Precipitation in Ai(Cu) Thin Films

1993 ◽  
Vol 309 ◽  
Author(s):  
E.G. Colgan ◽  
K.P. Rodbell ◽  
D.R. Vigliotti
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Grain Boundaries ◽  
Low Temperatures ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Precipitate Morphology ◽  
Electromigration Lifetime ◽  
Bamboo Structure ◽  
Anneal Temperature

AbstractThe Cu distribution in AI(Cu) thin films has been examined in blanket and patterned samples as a function of annealing. The Cu concentration in the Al grains, measured at room temperature, closely follows the solubility at the anneal temperature when a high cooling rate is used (-100 or -200°C/min) from the annealing temperature. With fine lines, the room temperature Cu concentration follows the solubility at the anneal temperature only at low anneal temperatures, ≤350°C. With higher temperatureannealing, >400°C, the room temperature Cu concentration in the Al grains was substantially less than the solubility at the anneal temperature. These differences are attributed to the smaller grain size in fine lines, which reduces the distance to grain boundaries. With blanket films, the Θ-phase (Al2Cu) precipitate morphology depends on the Al grain size and annealing temperature. With small Al grains (100-300 nm), the Θ particles are small (100-200 nm) and round whereas with large Al grains (0.5-2μm), the precipitates are long and irregularly shaped. The morphology of the Θ precipitates is constrained by the Al grain size. With fine lines, having a bamboo structure, the Θ precipitates are “wedge” shaped along grain boundaries or span the width of the line. The electromigration lifetime was found to depend strongly on the heat treatment used, an increase of 3X in lifetime was obtained for samples rapidly cooled from a temperature above the solvus curve as compared with samples subjected to additional aging at low temperatures. This is believed to be dueto the different concentrations of Cu in solution and to the size and distribution of Θparticles in the patterned lines.

scholarly journals Investigation of the Structural, Optical and Electrical Properties of AgInSe2 Thin Films

2018 ◽  
Vol 31 (1) ◽  
pp. 37 ◽  
Author(s):  
Iman Hameed Khudayer ◽  
Bushra Hashem Hussein Ali ◽  
Mohammed Hamid Mustafa ◽  
Ayser Jumah Ibrahim
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Grain Size ◽  
Electrical Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Optical And Electrical Properties ◽  
X Ray ◽  
20 Nm

  The Silver1Indium1Selenide (AgInSe2) (AIS) thin1films of (3001±20) nm thickness  have been1prepared2from the compound alloys2using thermal evaporation2 technique onto the glass2substrate at room temperature, with a deposition rate2(3±0.1) nm2sec-1. The2structural, optical and electrical3properties have been studied3at different annealing3temperatures (Ta=450, 550 and 650) K. The amount3or (concentration) of the elements3(Ag, In, Se) in the  prepared alloy3was verified using  an energy dispersive3x-ray spectrometer (EDS)3technology. X-ray diffraction3analysis shows that AIS alloy  prepared as (powder) and the thin films3are polycrystalline  of tetragonal3structure with preferential orientation3(112). The crystalline3size increases  as a function3of annealing temperature. The atomic force3microscope (AFM) technique  was used to examine3the  topography  and  estimate3the surface roughness, also the  average grain3size of the films. The results show3that the grain size increases3with annealing3temperature.   The optical4band gap of the films lies4in the range 1.6-1.9 eV. The films4appear to be4n-type indicating that the electrons4as a dominant charge4carrier. The electrical conductivity4increases  with a corresponding4increase in annealing4temperature.  

Bi Effect on the Microstructure and Dielectric Properties of SrTiO3 Thin Films

2006 ◽  
Vol 514-516 ◽  
pp. 245-249 ◽  
Author(s):  
Olena Okhay ◽  
Vitor M.X. Bergano ◽  
Ai Ying Wu ◽  
Paula M. Vilarinho
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Grain Size ◽  
Low Temperatures ◽  
Room Temperature ◽  
Sol Gel ◽  
Lattice Parameter ◽  
Dielectric Anomaly ◽  
Second Phase ◽  
Si Substrates

Crystalline (Sr1-1.5xBix)TiO3 (SBiT) thin films (0.002 ≤ x ≤ 0.5) were prepared by sol-gel on Pt/TiO2/SiO2/Si substrates. Cubic monophasic SBiT films were obtained for samples with x ≤ 0.167. For films with x ≥ 0.267 a second phase identified as Bi4Ti3O12 was observed. The lattice parameter of SBiT films increases with increasing Bi content, similar to the variation observed in SBiT ceramics. No obviously variation of the grain size with the Bi content was observed. The dielectric constant ε´ at room temperature increases with increasing of Bi concentrations up to x ≤ 0.1. The loss tangent of Bi doped SrTiO3 films is approximately 0.05 and lower than undoped ST films at 10kHz. The higher values of ε´ of Bi doped ST films with x=0.1 and x=0.167 in comparison with undoped films may suppose the appearance of a dielectric anomaly at low temperatures, which will be dependent on the Bi content.

Effect of Annealing temperature on the Structural and Magnetic Properties of TbxY3-xFe5O12(x = 0.0, 1.0, 2.0) Thin Films Prepared by Sol-Gel Process

2012 ◽  
Vol 501 ◽  
pp. 236-241 ◽  
Author(s):  
Ftema W. Aldbea ◽  
Noor Bahyah Ibrahim ◽  
Mustafa Hj. Abdullah ◽  
Ramadan E. Shaiboub
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Vibrating Sample Magnetometer ◽  
X Ray ◽  
Garnet Phase ◽  
Sol Gel Process ◽  
Amorphous Structures

Thin films nanoparticles TbxY3-xFe5O12 (x=0.0, 1.0, 2.0) were prepared by the sol-gel process followed by annealing process at various annealing temperatures of 700° C, 800° C and 900° C in air for 2 h. The results obtained from X-ray diffractometer (XRD) show that the films annealed below 900°C exhibit peaks of garnet mixed with small amounts of YFeO3 and Fe2O3. Pure garnet phase has been detected in the films annealed at 900°C. Before annealing the films show amorphous structures. The particles sizes measurement using the field emission scanning electron microscope (FE-SEM) showed that the particles sizes increased as the annealing temperature increased. The magnetic properties were measured at room temperature using the vibrating sample magnetometer (VSM). The saturation magnetization (Ms) of the films also increased with the annealing temperature. However, different behavior of coercivity (Hc) has been observed as the annealing temperature was increased.

scholarly journals Structural and Electrical Studies on ZnO-Based Thin Films by Laser Irradiation

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Shanyue Zhao ◽  
Yinqun Hua ◽  
Ruifang Chen ◽  
Jian Zhang ◽  
Ping Ji
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Properties ◽  
Grain Boundaries ◽  
Laser Irradiation ◽  
Nonlinear Coefficient ◽  
Acceptor State ◽  
Xrd Pattern ◽  
Electrical Studies ◽  
Structural And Electrical Properties

The effects of laser irradiation on the structural and electrical properties of ZnO-based thin films were investigated. The XRD pattern shows that the thin films were highly textured along thec-axis and perpendicular to the surface of the substrate. Raman spectra reveal that Bi2O3segregates mainly at ZnO-ZnO grain boundaries. After laser irradiation processing, the grain size of the film was reduced significantly, and the intrinsic atomic defects of grain boundaries and Bi element segregated at the grain boundary were interacted frequently and formed the composite defects of acceptor state. The nonlinear coefficient increased to 24.31 and the breakdown voltage reduced to 5.34 V.

Effect of Precursor Sol Ageing on Sol-Gel Derived Ruthenium Oxide Thin Films

1999 ◽  
Vol 606 ◽  
Author(s):  
S. Bhaskar ◽  
S. B. Majumder ◽  
P. S. Dobal ◽  
R. S. Katiyar ◽  
A. L. M. Cruz ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Ruthenium Oxide ◽  
Precursor Solution ◽  
Silicon Substrates ◽  
Solution Deposition ◽  
Precursor Material ◽  
Afm Analysis

AbstractIn the present work we have optimized the process parameters to yield homogeneous, smooth ruthenium oxide (RuO2) thin films on silicon substrates by a solution deposition technique using RuCl3.×.H2O as the precursor material. Films were annealed in a temperature range of 300°C to 700°C, and it was found that RuO2 crystallizes at a temperature as low as 400°C. The crystallinity of the films improves with increased annealing temperature and the resistivity decreases from 4.86µΩ-m (films annealed at 400°C) to 2.94pµΩ (films annealed at 700°C). Ageing of the precursor solution has a pronounced effect on the measured resistivities of RuO2 thin films. It was found that the measured room temperature resistivities increases from 2.94µΩ-m to 45.7µΩ-m when the precursor sol is aged for aged 60 days. AFM analysis on the aged films shows that the grain size and the surface roughness of the annealed films increase with the ageing of the precursor solution. From XPS analysis we have detected the presence of non-transformed RuCl3 in case of films prepared from aged solution. We propose, that solution ageing inhibits the transformation of RuCl3 to RuO2 during the annealing of the films. The deterioration of the conductivity with solution ageing is thought to be related with the chloride contamination in the annealed films.

Magnetic Properties of Sputtered Fe-O and Co-O Thin Films

1995 ◽  
Vol 403 ◽  
Author(s):  
D. V. Dimitrov ◽  
A. S. Murthy ◽  
G. C. Hadjipanayis ◽  
C. P. SWANN
Keyword(s):  
Grain Size ◽  
Low Temperatures ◽  
Room Temperature ◽  
Oxide Films ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Large Shift ◽  
X Ray ◽  
Grain Size And Shape ◽  
Spherical Grains

AbstractFe-O and Co-O films were prepared by DC magnetron sputtering in a mixture of Ar and O2 gases. By varying the oxygen to argon ratio, oxide films with stoichiometry FeO, Fe3O4, α-Fe2O3, CoO and Co3O4 were produced. TEM studies showed that the Fe – oxide films were polycrystalline consisting of small almost spherical grains, about 10 nm in size. Co-O films had different microstructure with grain size and shape dependent on the amount of oxygen. X-ray diffraction studies showed that the grains in Fe-O films were randomly oriented in contrast to Co-O films in which a <111> texture was observed. Pure FeO and α-Fe2O3 films were found to be superparamagnetic at room temperature but strongly ferromagnetic at low temperatures in contrast to the antiferromagnetic nature of bulk samples. A very large shift in the hysteresis loop, about 3800 Oe, was observed in field cooled Co-CoO films indicating the presence of a large unidirectional exchange anisotropy.

Transport Properties of Granular Nix(SiO2)100−x Thin Films

1990 ◽  
Vol 195 ◽  
Author(s):  
John R. Beamish ◽  
B.M. Patterson ◽  
K.M. Unruh
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Electrical Transport ◽  
Low Temperatures ◽  
Room Temperature ◽  
Volume Percent ◽  
Ni Content ◽  
Resistivity Minimum ◽  
Temperature Coefficient Of Resistivity ◽  
Sputter Deposited

ABSTRACTWe have studied the electrical transport behavior of sputter deposited Nix(SiO2)100−x thin films between room temperature and 100 mK and, at selected temperatures, in applied magnetic fields up to 6 T. As the Ni concentration x is reduced, the resistivity increases systematically. At a Ni concentration (nominal) of about x–70 atomic percent (38 volume percent) the room temperature coefficient of resistivity changes sign. For Ni concentrations greater than 70 percent the resistance first decreases with temperature then increases logarithmically at, low temperatures. This increase becomes smaller and the resistivity minimum moves to progressively lower temperatures as the Ni concentration increases. In films with less than x–70 percent Ni, the resistivity has a temperature dependence of the form ρ(T)–ρo exp \(To/T)α] between room temperature and about 5 K. The exponent a is about 1/2 and To increases with decreasing Ni content. Below 1 K, however, the resistivity increases much less rapidly, with a temperature dependence independent of Ni concentration. In all films the magnetoresistance is small and negative.

scholarly journals Annealing Effect on the Thermoelectric Properties of Bi2Te3Thin Films Prepared by Thermal Evaporation Method

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Jyun-Min Lin ◽  
Ying-Chung Chen ◽  
Chi-Pi Lin
Keyword(s):  
Thin Films ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Method ◽  
Si Substrates ◽  
Seebeck Coefficients

Bismuth telluride-based compounds are known to be the best thermoelectric materials within room temperature region, which exhibit potential applications in cooler or power generation. In this paper, thermal evaporation processes were adopted to fabricate the n-type Bi2Te3thin films on SiO2/Si substrates. The influence of thermal annealing on the microstructures and thermoelectric properties of Bi2Te3thin films was investigated in temperature range 100–250°C. The crystalline structures and morphologies were characterized by X-ray diffraction and field emission scanning electron microscope analyses. The Seebeck coefficients, electrical conductivity, and power factor were measured at room temperature. The experimental results showed that both the Seebeck coefficient and power factor were enhanced as the annealing temperature increased. When the annealing temperature increased to 250°C for 30 min, the Seebeck coefficient and power factor of n-type Bi2Te3-based thin films were found to be about −132.02 μV/K and 6.05 μW/cm·K2, respectively.

Ion Induced Grain Growth in Pd

1991 ◽  
Vol 235 ◽  
Author(s):  
D. A. Lilienfeld ◽  
P. Bøorgesen ◽  
P. Meyer
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Grain Growth ◽  
Low Temperatures ◽  
Nanocrystalline Materials ◽  
Ion Irradiation ◽  
Size Distributions ◽  
Careful Choice ◽  
Average Grain Size

ABSTRACTIon irradiation induced grain growth size distributions in Pd are examined at low temperatures. Two features are observed: 1) A majority of the grains saturate in size. 2) Some grains achieve sizes much larger than the average grain size and continue to grow with ion dose. However, by careful choice of ion mass and ion dose, it is possible to produce a sample possessing a monomodal grain size. This process will have applications in producing thin films of nanocrystalline materials.

Structural behavior of zirconia thin films with different level of yttrium content

2002 ◽  
Vol 756 ◽  
Author(s):  
V. Petrovsky ◽  
H. U. Anderson ◽  
T. Petrovsky ◽  
E. Bohannan
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Solid Oxide Fuel Cells ◽  
Annealing Temperature ◽  
Sintered Material ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
X Ray Diffraction ◽  
Oxygen Ion ◽  
Cubic Structure

ABSTRACTThe preparation of dense, high conductive electrolyte layers is important for the development of intermediate temperature solid oxide fuel cells and other devices based on oxygen-ion conductivity. Thus a number of techniques have been used to produce these structures. This study makes use of one of these methods to produce dense nanocrystalline 0.1 to 1 micron layers of zirconia.Polymeric precursors were used to prepare zirconia films with different level of yttrium substitution. The films were annealed at a series of temperatures in the range of 400 to 1000°C and were characterized via scanning electron microscopy (SEM) and X-ray diffraction (XRD). It was found that initially (after 400°C annealing) the films had cubic structure and grain size of ∼5 nm regardless of Y content. The situation changed when the annealing temperature was increased. Y (16mol %) stabilized zirconia (YSZ) did remain cubic over the entire temperature region investigated (up to 1000°C), but for compositions with lower Y content changes in crystal structure occurred. The samples with 4 and 8mol% Y transformed to the tetragonal phase at about 700°C, and undoped zirconia became monoclinic at the same temperature.The results were compared with sintered zirconia and it was shown that the behavior of thin films is quite similar to that of the sintered material, if the annealing temperature was high enough (>700°C). The main differences between polymeric prepared films and sintered material are the existence of the cubic structure at low temperatures (< 600°C) and lower transition temperatures to the high temperature phase, which can be explained by small initial grain size in polymer-derived zirconia.

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