Stress in Copper thin Films With Barrier Layers

1993 ◽  
Vol 309 ◽  
Author(s):  
Richard P. Vinci ◽  
John C. Bravman
Keyword(s):  
Thermal Cycle ◽  
Inverse Relationship ◽  
Room Temperature ◽  
Grazing Incidence ◽  
Dislocation Motion ◽  
X Ray ◽  
Cu Films ◽  
Barrier Layers ◽  
Dc Sputtering ◽  
X Ray Scattering

AbstractWafer curvature and grazing incidence x-ray scattering (GIXS) techniques were used to investigate the biaxial stresses induced in blanket Cu films during a thermal cycle to 460°C and back to room temperature. Cu was deposited by DC sputtering at ambient temperature. Several different barrier layer materials — SiO2, W, Ta, TiN, and Si3N4 — were used to compare any effect barrier choice might have on Cu microstructure evolution and mechanical behavior. Ta and Si3N4 encouraged a strong (111) Cu texture. A W barrier led to an untextured microstructure which underwent large, uneven grain growth during thermal cycling. Several samples were capped with a Ta layer which affected the stress behavior during cooling by inhibiting dislocation motion. An inverse relationship between strength and thickness was also documented.

Stress in Copper Thin Films with Barrier Layers

1993 ◽  
Vol 308 ◽  
Author(s):  
Richard P. Vinci ◽  
John C. Bravman
Keyword(s):  
Thermal Cycle ◽  
Inverse Relationship ◽  
Room Temperature ◽  
Grazing Incidence ◽  
Dislocation Motion ◽  
X Ray ◽  
Cu Films ◽  
Barrier Layers ◽  
Dc Sputtering ◽  
X Ray Scattering

ABSTRACTWafer curvature and grazing incidence x-ray scattering (GIXS) techniques were used to investigate the biaxial stresses induced in blanket Cu films during a thermal cycle to 460°C and back to room temperature. Cu was deposited by DC sputtering at ambient temperature. Several different barrier layer materials — SiO2, W, Ta, TiN, and Si3N4 — were used to compare any effect barrier choice might have on Cu microstructure evolution and mechanical behavior. Ta and Si3N4 encouraged a strong (111) Cu texture. A W barrier led to an untextured microstructure which underwent large, uneven grain growth during thermal cycling. Several samples were capped with a Ta layer which affected the stress behavior during cooling by inhibiting dislocation motion. An inverse relationship between strength and thickness was also documented.

X-Ray Observation of Stress Gradients and Precipitation in Passivated AL-0.5% Cu Films

1993 ◽  
Vol 307 ◽  
Author(s):  
Paul R. Besser ◽  
Sean Brennan ◽  
John C. Bravman
Keyword(s):  
Room Temperature ◽  
Grazing Incidence ◽  
Synchrotron Source ◽  
X Ray ◽  
Cu Films ◽  
Stress Gradients ◽  
Inhomogeneous Strain ◽  
X Ray Scattering ◽  
Peak Broadening ◽  
Dissolution And Precipitation

ABSTRACTGrazing incidence x-ray scattering has been used with a synchrotron source to characterize the stress gradients during thermal cycling in 1.0 μm thick Al-0.5%Cu films passivated with silicon nitride. The films were cycled between room temperature and 400°C. The stress-temperature behavior is quantitatively similar to that measured for unpassivated films. The presence of an inhomogeneous strain is documented at low temperatures. The dissolution and precipitation of Al2Cu is suggested as an explanation for the gradients and asymmetric x-ray peak broadening.

Determination of Strain Distributions in Aluminum Thin Films as a Function of Temperature by the use of Synchrotron Grazing Incidence X-Ray Scattering

1991 ◽  
Vol 239 ◽  
Author(s):  
Ramnath Venkatraman ◽  
Paul R. Besser ◽  
Sean Brennan ◽  
John C. Bravman
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Grazing Incidence ◽  
Surface Relaxation ◽  
Line Broadening ◽  
X Ray ◽  
Relaxation Effects ◽  
X Ray Scattering ◽  
Ray Scattering

ABSTRACTWe have measured elastic strain distributions with depth as a function of temperature in Al thin films of various thicknesses on oxidized silicon using synchrotron grazing incidence X-ray scattering (GIXS). Disregarding minor surface relaxation effects that depend on the film thickness, it is shown that there are no gross strain gradients in these films in the range of temperatures (between room temperature and 400°C) considered. We also observe X-ray line broadening effects, suggesting an accumulation of dislocations on cooling the films, and their annealing out as the films are reheated.

scholarly journals Thermal unequilibrium of strained black CsPbI3 thin films

Science ◽  
2019 ◽  
Vol 365 (6454) ◽  
pp. 679-684 ◽  
Author(s):  
Julian A. Steele ◽  
Handong Jin ◽  
Iurii Dovgaliuk ◽  
Robert F. Berger ◽  
Tom Braeckevelt ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Optoelectronic Devices ◽  
Grazing Incidence ◽  
Optically Active ◽  
Wide Angle ◽  
Biaxial Strain ◽  
X Ray ◽  
X Ray Scattering ◽  
Thermal Stability Of

The high-temperature, all-inorganic CsPbI3 perovskite black phase is metastable relative to its yellow, nonperovskite phase at room temperature. Because only the black phase is optically active, this represents an impediment for the use of CsPbI3 in optoelectronic devices. We report the use of substrate clamping and biaxial strain to render black-phase CsPbI3 thin films stable at room temperature. We used synchrotron-based, grazing incidence, wide-angle x-ray scattering to track the introduction of crystal distortions and strain-driven texture formation within black CsPbI3 thin films when they were cooled after annealing at 330°C. The thermal stability of black CsPbI3 thin films is vastly improved by the strained interface, a response verified by ab initio thermodynamic modeling.

Thermal Stability and Internal Stress for Strongly (111) Oriented Cu Films

2003 ◽  
Vol 795 ◽  
Author(s):  
Sinji Takayama ◽  
Makato Oikawa ◽  
Tokuji Himuro
Keyword(s):  
Thermal Stability ◽  
Strain Distribution ◽  
Film Surface ◽  
Grazing Incidence ◽  
Internal Stresses ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cu Films ◽  
X Ray Scattering ◽  
Thermal Stability Of

ABSTRACTInternal stresses and thermal stability of strongly (111) oriented Cu thin films, which are one of promising interconnect materials in advanced ULSI devices, have been studied comparing with those of non-oriented Cu films. Their internal stresses parallel to a film surface were measured by a conventional X-ray diffraction technique (d-spacing vs. sin2ψ method), while the strain distribution with depth by a grazing incidence X-ray scattering (GIXS) methods. Large stress relaxation in strongly (111) oriented Cu films takes place at 200°C without showing any significant grain growth and formation of thermal defects like hillocks. The residual internal stresses of highly oriented (111) Cu films increase almost linearly throughout the thickness up to the substrates. The feature of stress distribution in film depth does not change on annealing. The changes of the residual stresses at each depth are nearly the same as stresses parallel to film surface measured.

Giant Magnetoresistance and Structure of Phase-Segregated Epitaxial Metals

1993 ◽  
Vol 313 ◽  
Author(s):  
R.F. Marks ◽  
R.F.C. Farrow ◽  
G.R. Harp ◽  
S.S.P. Parkin ◽  
T.A. Rabedeau ◽  
...  
Keyword(s):  
Exchange Coupling ◽  
Giant Magnetoresistance ◽  
Room Temperature ◽  
Grazing Incidence ◽  
Film Structure ◽  
X Ray ◽  
Spacing Effects ◽  
X Ray Scattering ◽  
Technological Potential ◽  
First Time

ABSTRACTGiant Magnetoresistance, GMR, in thin metal films elicits attention due to its technological potential as well as its relevance to theory of exchange coupling. Epitaxial, phase-segregated ferromagnet/paramagnet Mixtures have been grown by UHV evaporation. Such films show spontaneous formation of ferromagnetic clusters, leading to large values of GMR (40% at room temperature) as grown. The growth of Co-Cu, Co-Ag, Fe-Ag and Permalloy-Ag films are described. Structural analysis by grazing-incidence small angle X-ray scattering (GISAXS) provides a measure of cluster size and characteristic spacing. Effects of growth temperature and subsequent annealing on GMR and film structure are described. Preliminary results of TEM examination of (001) Fe-Ag and Co-Ag granular films are presented for the first time.

New Structure of CTAB Templated Silica Films as revealed by GISAXS coupled to HRTEM

2000 ◽  
Vol 628 ◽  
Author(s):  
Sophie Besson ◽  
Catherine Jacquiod ◽  
Thierry Gacoin ◽  
André Naudon ◽  
Christian Ricolleau ◽  
...  
Keyword(s):  
Cetyltrimethylammonium Bromide ◽  
Grazing Incidence ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Electronic Microscopy ◽  
Silica Films ◽  
X Ray ◽  
X Ray Scattering ◽  
Hexagonal Arrangement ◽  
Spherical Micelles

ABSTRACTA microstructural study on surfactant templated silica films is performed by coupling traditional X-Ray Diffraction (XRD) and Transmission Electronic Microscopy (TEM) to Grazing Incidence Small Angle X-Ray Scattering (GISAXS). By this method it is shown that spin-coating of silicate solutions with cationic surfactant cetyltrimethylammonium bromide (CTAB) as a templating agent provides 3D hexagonal structure (space group P63/mmc) that is no longer compatible with the often described hexagonal arrangement of tubular micelles but rather with an hexagonal arrangement of spherical micelles. The extent of the hexagonal ordering and the texture can be optimized in films by varying the composition of the solution.

Quantifying Multiple Crystallite Orientations and Crystal Heterogeneities in Complex Thin Film Materials

2019 ◽  
Author(s):  
Jonathan Ogle ◽  
Daniel Powell ◽  
Eric Amerling ◽  
Detlef Matthias Smilgies ◽  
Luisa Whittaker-Brooks
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Design ◽  
Grazing Incidence ◽  
Crystallite Orientation ◽  
Miller Index ◽  
X Ray ◽  
X Ray Scattering ◽  
Orientation Distributions ◽  
Orientation Information

<p>Thin film materials have become increasingly complex in morphological and structural design. When characterizing the structure of these films, a crucial field of study is the role that crystallite orientation plays in giving rise to unique electronic properties. It is therefore important to have a comparative tool for understanding differences in crystallite orientation within a thin film, and also the ability to compare the structural orientation between different thin films. Herein, we designed a new method dubbed the mosaicity factor (MF) to quantify crystallite orientation in thin films using grazing incidence wide-angle X-ray scattering (GIWAXS) patterns. This method for quantifying the orientation of thin films overcomes many limitations inherent in previous approaches such as noise sensitivity, the ability to compare orientation distributions along different axes, and the ability to quantify multiple crystallite orientations observed within the same Miller index. Following the presentation of MF, we proceed to discussing case studies to show the efficacy and range of application available for the use of MF. These studies show how using the MF approach yields quantitative orientation information for various materials assembled on a substrate.<b></b></p>

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