Grain Boundary Sliding in Thin Substrate-Bonded AL Films

1993 ◽  
Vol 308 ◽  
Author(s):  
M. Prieler ◽  
H.G. Bohn ◽  
W. Schilling ◽  
H. Trinkaus
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Bulk Material ◽  
Grain Boundary Sliding ◽  
Systematic Investigation ◽  
Lattice Diffusion ◽  
Film Material ◽  
Thin Film Material ◽  
Si Substrates ◽  
Boundary Sliding

ABSTRACTA systematic investigation of the anelastic relaxation of thin Al films on Si substrates has been carried out. It was found that both the relaxation in bulk and thin film material can be explained by a model involving glide of grain boundaries (GBs). The mass transport necessary for the glide occurs via GB diffusion in the thin films and via lattice diffusion in the bulk material the different behavior being due to the more of two orders of magnitude smaller grains in the films. Internal friction thus provides a technique to measure diffusional parameters of GB diffusion in thin films.

Grain Boundary Sliding in Thin Substrate-Bonded al Films

1993 ◽  
Vol 309 ◽  
Author(s):  
M. Prieler ◽  
H.G. Bohn ◽  
W. Schilling ◽  
H. Trinkaus
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Bulk Material ◽  
Grain Boundary Sliding ◽  
Systematic Investigation ◽  
Lattice Diffusion ◽  
Film Material ◽  
Thin Film Material ◽  
Si Substrates ◽  
Boundary Sliding

AbstractA systematic investigation of the anelastic relaxation of thin Al films on Si substrates has been carried out. It was found that both the relaxation in bulk and thin film material can be explained by a model involving glide of grain boundaries (GBs). The mass transport necessary for the glide occurs via GB diffusion in the thin films and via lattice diffusion in the bulk material the different behavior being due to the more of two orders of magnitude smaller grains in the films. Internal friction thus provides a technique to measure diffusional parameters of GB diffusion in thin films.

Integrating Ba1-xSrxTiO3 Thin Films with Large Area, Affordable, Industry Standard Substrates for Microwave Applications

2004 ◽  
Vol 833 ◽  
Author(s):  
W. D. Nothwanga ◽  
M. W. Cole ◽  
P. C. Joshi ◽  
S. Hirsch ◽  
E. Ngo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Buffer Layer ◽  
Phased Array ◽  
Low Cost ◽  
Film Material ◽  
Large Area ◽  
Thin Film Material ◽  
Microwave Applications ◽  
The Cost

ABSTRACTThe US Army is actively pursuing technologies to enable transformation goals of a lighter, faster, more potent force via affordable, electronically scanned phased array antennas (ESA's) that will provide the means for achieving a high data rate with beyond-line-of-sight, mobile communications. In order to transition this technology to Army applications, it is important that the cost of each device be decreased from current technology. Traditionally, paraelectric, active thin films of magnesium doped barium strontium titanate, have been deposited on expensive ceramic (MgO, LaAlO3, SrTiO3, Al2O3) substrates, and compositionally designed for tunable microwave applications. By integrating an active, thin film material with a large area, low cost, microwave friendly substrate, the cost could be significantly reduced. While Si is not a suitable substrate for microwave applications, a low cost, microwave friendly, buffer layer on silicon would be.A high performance Ta2O5 thin film, passive, buffer layer on Si substrates has been successfully designed, fabricated, characterized, and optimized via metalorganic solution decomposition technique. The optimized Ta2O5 based thin film exhibited suitable microwave material properties, including an enhanced dielectric constant (εr = 45.6), low dielectric loss (tan δ=0.006), low leakage current, high film resistivity (ρ=1012 Ω-cm at E=1 MV/cm), excellent temperature stability (temperature coefficient of capacitance of 52 ppm/°C), and outstanding bias stability of capacitance (∼1.41% at 1 MV/cm). The permittivity and dissipation factor, also of extreme importance, exhibited minimal dielectric dispersion with frequency. The dielectric passive buffer layer film was typified by a uniform dense microstructure with minimal defects, and a smooth, nano-scale fine grain, crack and pinhole free surface morphology. At elevated processing temperature, there was negligible elemental interdiffusion at the interface between the substrate and buffer layer as verified by Rutherford Backscatter Spectroscopy and Auger Spectroscopy, ensuring long-term reliability of the heterostructure.By developing a passive, thin film material that is microwave friendly, we have demonstrated the direct integration of paraelectric active thin films with silicon substrates. This should allow phase shifter materials technology to be implemented across a wide spectrum of Army and commercial applications, specifically, affordable, mobile phased array antenna systems for a variety of DoD applications.

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

Interfacial adhesion of nanoporous zeolite thin films

2006 ◽  
Vol 21 (2) ◽  
pp. 505-511 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Interfacial Adhesion ◽  
Interfacial Strength ◽  
Future Generation ◽  
In Situ Growth ◽  
Seeded Growth ◽  
Si Substrates ◽  
Film Substrate

Nanoporous silica zeolite thin films are promising candidates for future generation low-dielectric constant (low-k) materials. During the integration with metal interconnects, residual stresses resulting from the packaging processes may cause the low-k thin films to fracture or delaminate from the substrates. To achieve high-quality low-k zeolite thin films, it is important to carefully evaluate their adhesion performance. In this paper, a previously reported laser spallation technique is modified to investigate the interfacial adhesion of zeolite thin film-Si substrate interfaces fabricated using three different methods: spin-on, seeded growth, and in situ growth. The experimental results reported here show that seeded growth generates films with the highest measured adhesion strength (801 ± 68 MPa), followed by the in situ growth (324 ± 17 MPa), then by the spin-on (111 ± 29 MPa). The influence of the deposition method on film–substrate adhesion is discussed. This is the first time that the interfacial strength of zeolite thin films-Si substrates has been quantitatively evaluated. This paper is of great significance for the future applications of low-k zeolite thin film materials.

Abnormal infrared effects of nanometer scale thin film material of PtPd alloy in CO adsorption

2001 ◽  
Vol 46 (17) ◽  
pp. 1439-1442 ◽  
Author(s):  
Zhi Chen ◽  
Shigang Sun ◽  
Nan Ding ◽  
Zhiyou Zhou
Keyword(s):  
Thin Film ◽  
Co Adsorption ◽  
Nanometer Scale ◽  
Film Material ◽  
Thin Film Material

Preparation and Characterization of SnO2/WO3/MWCNT Nanocomposite Thin Film for NO2 Gas Sensor

2010 ◽  
Vol 129-131 ◽  
pp. 99-103
Author(s):  
Wei Lin ◽  
Shi Zhen Huang ◽  
Wen Zhe Chen
Keyword(s):  
Thin Film ◽  
Gas Sensor ◽  
Photoelectron Spectroscopy ◽  
Mixed Oxides ◽  
Surface Composition ◽  
Chemical Elements ◽  
Film Material ◽  
Nanocomposite Thin Film ◽  
Oxide Compound ◽  
Thin Film Material

A novel nanocomposite thin film material of SnO2/WO3 metal oxide compound doped by multi-walled carbon nanotubes (MWCNT) and its corresponding gas sensor were prepared by radio frequency (RF) reactive magnetron sputtering. The surface composition and chemical elements of the thin film material were respectively analyzed and validated by X-ray diffraction (XRD) and photoelectron spectroscopy (XPS). The influencing factors of gas sensing properties were studied and the test results of gas sensor were analyzed. The results indicated that the detection using the composite material gas sensors for low concentration NO2 toxic gas could be greatly improved by MWCNTs which were doped on the mixed oxides matrix. A possible mechanism explaining the behaviour of the thin film gas sensor was introduced.

The Optical Properties of Thin Films Tin Oxide with Triple Doping (Aluminum, Indium, and Fluorine) for Electronic Device

2021 ◽  
Vol 317 ◽  
pp. 477-482
Author(s):  
Aris Doyan ◽  
Susilawati ◽  
Muhammad Taufik ◽  
Syamsul Hakim ◽  
Lalu Muliyadi
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Optical Properties ◽  
Tin Oxide ◽  
Electronic Device ◽  
Film Material ◽  
Mass Percentage ◽  
Gap Energy ◽  
As Doping

Tin oxide (SnO2) thin film is a form of modification of semiconductor material in nanosize. The thin film study aims to analyze the effect of triple doping (Aluminum, Indium, and Fluorine) on the optical properties of SnO2: (Al + In + F) thin films. Aluminum, Indium, and Fluorine as doping SnO2 with a mass percentage of 0, 5, 10, 15, 20, and 25% of the total thin-film material. The addition of Al, In, and F doping causes the thin film to change optical properties, namely the transmittance and absorbance values ​​changing. The transmittance value is 67.50, 73.00, 82.30, 87.30, 94.6, and 99.80 which is at a wavelength of 350 nm for the lowest to the highest doping percentage, respectively. The absorbance value increased with increasing doping percentage at 300 nm wavelength of 0.52, 0.76, 0.97, 1.05, 1.23, and 1.29 for 0, 5, 10, 15, 20, and 25% doping percentages, respectively. The absorbance value is then used to find the gap energy of the SnO2: (Al + In + F) thin film of the lowest doping percentage to the highest level i.e. 3.60, 3.55, 3.51, 3.47, 3.42, and 3.41 eV. Thin-film activation energy also decreased with values of 2.27, 2.04, 1.85, 1.78, 1.72, and 1.51 eV, respectively for an increasing percentage of doping. The thin-film SnO2: (Al + In + F) which experiences a gap energy reduction and activation energy makes the thin film more conductive because electron mobility from the valence band to the conduction band requires less energy and faster electron movement as a result of the addition of doping.

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