Metal Overlayers on Self-Organized Molecular Assemblies: X-ray Photoelectron Spectroscopy of CR/CM and NI/CM on 12-Nercaptododecanenitrile

1993 ◽  
Vol 304 ◽  
Author(s):  
D. R. Jung ◽  
A. W. Czanderna
Keyword(s):  
Binding Energy ◽  
Photoelectron Spectroscopy ◽  
Chemical Interaction ◽  
Molecular Assemblies ◽  
X Ray ◽  
Self Organized ◽  
Deposited Metal ◽  
Show Evidence ◽  
Metal Overlayers ◽  
End Group

AbstractOverlayers of Cr and Ni deposited at 22 °C and at -100 °C onto self-organized molecular assemblies of HS(CH2 )11 CN on Au have been studied by X-ray photoelectron spectroscopy (XPS). For the lowest overlayer coverages, the C ls and N is core levels show evidence for a chemical interaction between the deposited metal and the CN end-group. At 22 °C and for coverages of 0.6 nm or more, Cr/CN shows a C ls low binding energy, carbide-like shoulder. The degree of metal penetration is assessed based on the attenuation of the C ls and Au 4f intensities, and on the positions of the Cr and Ni 2p levels. In general, the least penetration and the largest binding energy shifts of the C, N, and the Cr or Ni core levels are observed for Cr/CN, while and Ni/CN shows smaller shifts and greater penetration.

Formation of GaN Self-Organized Nanotips by Nanomasking Effect

2001 ◽  
Vol 707 ◽  
Author(s):  
Harumasa Yoshida ◽  
Tatsuhiro Urushido ◽  
Hideto Miyake ◽  
Kazumasa Hiramtsu
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Aspect Ratio ◽  
Formation Mechanism ◽  
High Aspect Ratio ◽  
Photoelectron Spectroscopy ◽  
Nanometer Scale ◽  
Xps Analysis ◽  
X Ray ◽  
Self Organized

ABSTRACTWe have successfully fabricated self-organized GaN nanotips by reactive ion etching using chlorine plasma, and have revealed the formation mechanism. Nanotips with a high density and a high aspect ratio have been formed after the etching. We deduce from X-ray photoelectron spectroscopy (XPS) analysis that the nanotip formation is attributed to nanometer-scale masks of SiO2 on GaN. The structures calculated by Monte Carlo simulation of our formation mechanism are very similar to the experimental nanotip structures.

Use of x-ray photoelectron spectroscopy to investigate the deposition of metal overlayers onto the clean cleaved CdS surface

1990 ◽  
Vol 231 (1-2) ◽  
pp. 98-102 ◽  
Author(s):  
Z. Sobiesierski ◽  
N.M. Forsyth ◽  
I.M. Dharmadasa ◽  
R.H. Williams
Keyword(s):  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Metal Overlayers

Xps Analysis of the Sapphire Surface as a Function of High Temperature Vacuum Annealing

1989 ◽  
Vol 159 ◽  
Author(s):  
E.D. Richmond
Keyword(s):  
High Temperature ◽  
Binding Energy ◽  
Photoelectron Spectroscopy ◽  
Vacuum Annealing ◽  
Xps Analysis ◽  
Chemical Changes ◽  
Cleaning Procedure ◽  
Sapphire Surface ◽  
X Ray ◽  
First Time

ABSTRACTFor the first time the (1102) surface of sapphire has been investigated by X-ray photoelectron spectroscopy to ascertain chemical changes resulting from annealing in vacuum at 1300° C and 1450° C. As received substrates had a substantial surface C contaminant. For substrates that were chemically cleaned before inserting them into the MBE system no trace of carbon is detected. A residual flourine contaminant results from the cleaning procedure and is desorbed by the vacuum annealing. Spectra of annealed substrates are compared to the unannealed chemically cleaned substrates. The annealed substrates exhibit 0.4 to 0.5 eV shift to higher binding energy of the Al peak and a 0.3 eV shift to higher binding energy of the O peak. In addition, a 2% depletion of oxygen from the surface occurs.

Deposition of Cobalt Doped Zinc Oxide Thin Film Nano-Composites Via Pulsed Electron Beam Ablation

MRS Advances ◽  
2016 ◽  
Vol 1 (6) ◽  
pp. 433-439 ◽  
Author(s):  
Asghar Ali ◽  
Patrick Morrow ◽  
Redhouane Henda ◽  
Ragnar Fagerberg
Keyword(s):  
Zinc Oxide ◽  
Electron Beam ◽  
Binding Energy ◽  
Photoelectron Spectroscopy ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
Oxide Thin Film ◽  
X Ray ◽  
Pulsed Electron Beam ◽  
Deposited Films

AbstractThis study reports on the preparation of cobalt doped zinc oxide (Co:ZnO) films via pulsed electron beam ablation (PEBA) from a single target containing 20 w% Co on sapphire (0001) and silicon (100) substrates. The films have been deposited at various temperatures (350оC, 400оC, 450оC) and pulse frequencies (2 Hz, 4 Hz), under a background argon (Ar) pressure of about 3 mtorr, and an accelerating voltage of 14 kV. The surface morphology has been examined by atomic force microscopy (AFM) and scanning electron microscopy (SEM). According to SEM analysis, the films consist of nano-globules whose size is in the range of 80-178 nm. Energy dispersive x-ray spectroscopy (EDX) reveals that deposition is congruent and the prepared films contain ∼20±5 w% cobalt. It has been found that the nano-globules in the deposited films are cobalt-rich zones containing ∼70 w% Co. From x-ray photoelectron spectroscopy (XPS) analysis, Co 2p3/2 peaks indicate that the deposited films contain CoO (binding energy = 780.5 eV) as well as metallic Co (binding energy = 778.1-778.5 eV). X-ray diffraction (XRD) analysis supports the presence of metallic Co hcp phase (2ϴ = 44.47° and 47.43°) in the films.

scholarly journals Characterization of Ti/SnO2 Interface by X-ray Photoelectron Spectroscopy

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 202
Author(s):  
Miranda Martinez ◽  
Anil R. Chourasia
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Chemical Interaction ◽  
Photoelectron Spectra ◽  
X Ray ◽  
Increasing Trend ◽  
Substrate Temperatures ◽  
Beam Technique

The Ti/SnO2 interface has been investigated in situ via the technique of x-ray photoelectron spectroscopy. Thin films (in the range from 0.3 to 1.1 nm) of titanium were deposited on SnO2 substrates via the e-beam technique. The deposition was carried out at two different substrate temperatures, namely room temperature and 200 °C. The photoelectron spectra of tin and titanium in the samples were found to exhibit significant differences upon comparison with the corresponding elemental and the oxide spectra. These changes result from chemical interaction between SnO2 and the titanium overlayer at the interface. The SnO2 was observed to be reduced to elemental tin while the titanium overlayer was observed to become oxidized. Complete reduction of SnO2 to elemental tin did not occur even for the lowest thickness of the titanium overlayer. The interfaces in both the types of the samples were observed to consist of elemental Sn, SnO2, elemental titanium, TiO2, and Ti-suboxide. The relative percentages of the constituents at the interface have been estimated by curve fitting the spectral data with the corresponding elemental and the oxide spectra. In the 200 °C samples, thermal diffusion of the titanium overlayer was observed. This resulted in the complete oxidation of the titanium overlayer to TiO2 upto a thickness of 0.9 nm of the overlayer. Elemental titanium resulting from the unreacted overlayer was observed to be more in the room temperature samples. The room temperature samples showed variation around 20% for the Ti-suboxide while an increasing trend was observed in the 200 °C samples.

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