Installation procedure for in-situ melted-soil piles using a low-temperature plasma generator

1999 ◽  
Vol 36 (6) ◽  
pp. 217-222
Author(s):  
V. V. Sirotyuk ◽  
V. A. Arkhipov
Keyword(s):  
Low Temperature ◽  
Plasma Generator ◽  
Low Temperature Plasma ◽  
Temperature Plasma

Lowtemperature plasma generator for effective processing of materials

2021 ◽  
Vol 77 (5) ◽  
pp. 587-592
Author(s):  
M. Kh. Gadzhiev ◽  
A. S. Tyuftyaev ◽  
Yu. M. Kulikov ◽  
M. A. Sargsyan ◽  
D. I. Yusupov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Flow Rate ◽  
Gas Flow ◽  
Arc Discharge ◽  
Plasma Jet ◽  
Plasma Generator ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
High Enthalpy ◽  
High Resource

Low-temperature plasma is used in metallurgy for steel alloying by nitrogen, deoxidization of magnetic alloys, obtaining of steels with particularly low carbon content, metal cleaning of nonmetallic inclusions, desulfurization and other refining processes. The wide application of those technologies is restrained by absence of reliable generators of low-temperature plasma (GLP) with sufficient resource of continuous operation. As a result of studies, a universal generator of high-enthalpy plasma jet of various working gases was created. The generator has expanding channel of the output electrode with an efficiency of ~60 % for argon working gas and ~80% for nitrogen and air. It was shown that the developed generator of low-temperature plasma ensures formation of a weakly diverging (2α = 12°) plasma jet with a diameter D = 5–12 mm, an enthalpy of 5–50 kJ/g and a mass average temperature of 5–10 kK, at a full electric power of the arc discharge of 5–50 kW and a plasma-forming gas flow rate of 1–3 g/s. Results of the study of propane additions to the plasma-forming gas effect on the state of cathodes with inserts made of pure tungsten, lanthanum tungsten, and hafnium presented. It was shown that a small propane addition (1%) to the plasma-forming gas, results in reducing effect of the insert material. Study of the GLP operation at arc current 100A with addition to the working gas nitrogen maximum possible volume of propane, which don’t disturb stability of arc showed that for the developed plasma generator at the nitrogen flow rate ~0,45 g/s, the propane flow rate was ~0,33 g/s (not more than ~73 % of the plasma-forming gas). The created high-resource GLP with changeable electrodes enables to obtain at the exit a high-enthalpy plasma flow of various gases (argon, nitrogen, air) and can be a prototype of more powerful plasmotrons of various technological application, in particular for plasma metallurgy.

scholarly journals Low-temperature plasma generator for investigation of plasma jet with heat-resistant materials

2018 ◽  
Vol 33 (1) ◽  
pp. 50-56
Author(s):  
M.Kh. Gadzhiev ◽  
◽  
A.S. Tyuftyaev ◽  
E.Kh. Isakaev ◽  
N.A. Demirov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Plasma Jet ◽  
Plasma Generator ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Heat Resistant

A Dual-Function Uhv-Compatible Chamber for i) Low-Temperature Plasma-Assisted Oxidation, and ii) High-Temperature Rapid Thermal Processing of Si-Based Dielectric Gate Heterostructures

1993 ◽  
Vol 303 ◽  
Author(s):  
S. Hattangady ◽  
X-L Xu ◽  
M.J. Watkins ◽  
B. Hornung ◽  
V. Misra ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Processing ◽  
Chemical Vapor ◽  
Dual Function ◽  
Low Temperature Plasma ◽  
Interface Formation ◽  
Temperature Plasma ◽  
Oxide Heterostructures ◽  
Mos Devices

ABSTRACTA combination of i) low-temperature, 300-400°C, plasma-assisted oxidation to form the SiO2/Si interfaces, and ii) 800°C rapid thermal chemical vapor deposition, RTCVD, to deposit SiO2 thin films have been used to fabricate gate-oxide heterostructures. This sequence separates SiO2/Si interface formation by the oxidation process from the deposition of the bulk oxide layer by RTCVD. These two processes were performed in situ and sequentially in a single-chamber, ultraclean quartz reactor system. We have studied the chemistry of the interface formation process by Auger electron spectroscopy, AES, and the electrical properties of MOS devices with Al electrodes by C-V techniques.

Low-Temperature Plasma Generator with Direct Arc for Plasma Remelting

2020 ◽  
Vol 58 (4) ◽  
pp. 539-544
Author(s):  
M. Kh. Gadzhiev ◽  
M. V. Ilyichev ◽  
A. S. Tyuftyaev ◽  
M. A. Sargsyan
Keyword(s):  
Low Temperature ◽  
Plasma Generator ◽  
Low Temperature Plasma ◽  
Temperature Plasma

A Dual-Function UHV-Compatible Chamber for i) Low-Temperature Plasma-Assisted Oxidation, and ii) High-Temperature Rapid Thermal Processing of Si-Based Dielectric Gate Heterostructures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Hattiangady ◽  
X-L Xu ◽  
M.J. Watkins ◽  
B. Hornung ◽  
V. Misra ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Processing ◽  
Chemical Vapor ◽  
Dual Function ◽  
Low Temperature Plasma ◽  
Interface Formation ◽  
Temperature Plasma ◽  
Oxide Heterostructures ◽  
Mos Devices

ABSTRACTA combination of i) low-temperature, 300-400°C, plasma-assisted oxidation to form the SiO2/Si interfaces, and ii) 800°C rapid thermal chemical vapor deposition, RTCVD, to deposit SiO2 thin films have been used to fabricate gate-oxide heterostructures. This sequence separates SiO2/Si interface formation by the oxidation process from the deposition of the bulk oxide layer by RTCVD. These two processes were performed in situ and sequentially in a single-chamber, ultraclean quartz reactor system. We have studied the chemistry of the interface formation process by Auger electron spectroscopy, AES, and the electrical properties of MOS devices with Al electrodes by C-V techniques.

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