Correlation Between Defect Density and Process Variables In Step-Graded, Relaxed Si0.7Ge0.3 Grown on Si by Rtcvd

1993 ◽  
Vol 303 ◽  
Author(s):  
G. Patrick Watson ◽  
Eugene A. Fitzgerald ◽  
Bahram Jalali ◽  
Ya-Hong Xie ◽  
Bonnie Weir ◽  
...  
Keyword(s):  
Defect Density ◽  
Chemical Vapor ◽  
Dark Spot ◽  
Threading Dislocation ◽  
Dark Line ◽  
Si Substrates ◽  
Transmission Electron ◽  
Threading Dislocation Density ◽  
Line Defects ◽  
Threading Defects

ABSTRACTThe effect of the average grading rate and of the number of incremental Ge alloy steps on the threading dislocation density has been studied in 30% Ge relaxed films formed by rapid thermal chemical vapor deposition (RTCVD) on Si substrates. Electron beam induced current (EBIC) images and transmission electron microscopy (TEM) show that threading defects fall in two categories: individual threading dislocations (dark spot defects), and organized clusters of these threads (pile-ups, or dark line defects). The overall surface defect density must include both categories to properly characterize the material. The lowest defect density, 4 × 105cm−2, was found in specimens grown at an average grading rate of 10% Ge per pm thickness.

MO-CVD GaAs Grown by Direct Deposition on Si

1987 ◽  
Vol 91 ◽  
Author(s):  
S. M. Vernon ◽  
S. J. Pearton ◽  
J. M. Gibson ◽  
R. Caruso ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Gaas Layer ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Transmission Electron ◽  
Activation Data ◽  
Threading Dislocation Density ◽  
Donor Activity

ABSTRACTGaAs layers were grown directly on misoriented (2° off (100)→[011]) Si substrates by Metalorganic Chemical Vapor Deposition. The threading dislocation density at the surface of 4 μm thick layers was typically 108cm−2, as determined by both preferential etching and transmission electron microscopy. Rapid thermal annealing (900°C, 10s) improved the crystalline quality of the GaAs near the heterointerface while allowing no detectable Si diffusion into this layer. Two deep electron traps were observed in the undoped GaAs, but were present at a low concentration (∼ 1013 cm−3 ). The (400) x-ray diffraction peak width from the GaAs was significantly reduced with increasing GaAs layer thickness, indicating improved material quality. This is supported by Si implant activation data, which shows higher net donor activity in thicker layers.

Defect Reduction in GaAs Grown on Si by Using Saw-Tooth-Patterned Substrates

1992 ◽  
Vol 281 ◽  
Author(s):  
Jane G. Zhu ◽  
M. M. Al-Jassim ◽  
N. H. Karam ◽  
K. M. Jones
Keyword(s):  
Dislocation Density ◽  
Chemical Vapor ◽  
Growth Front ◽  
Organic Chemical ◽  
Threading Dislocation ◽  
Defect Reduction ◽  
Dislocation Configuration ◽  
Si Substrates ◽  
Transmission Electron ◽  
Threading Dislocation Density

ABSTRACTEpitaxial GaAs layers have been grown on saw-tooth-patterned (STP) Si substrates by metal-organic chemical vapor deposition and analyzed by transmission electron microscopy. The utilization of this special interface feature is effective in suppressing the formation of antiphase boundaries and reducing the threading dislocation density. The growth of GaAs has been studied with the epilayer thicknesses ranging from several hundred angstroms to several microns. Very flat growth front on (100) plane above the STP region is observed. The dislocation density decreases very rapidly in the area farther away from the interface. The dislocation configuration at this STP interface is very different from that at the extensively studied two-dimensional planar interface.

The Heteroepitaxy and Characterization of Inp and GaInP on Silicon for Solar Cell Applications

1990 ◽  
Vol 198 ◽  
Author(s):  
M.M. Al-Jassim ◽  
R.K. Ahrenkiel ◽  
M.W. Wanlass ◽  
J.M. Olson ◽  
S.M. Vernon
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Defect Density ◽  
Minority Carrier Lifetime ◽  
Buffer Layers ◽  
Threading Dislocation ◽  
Si Substrates ◽  
Threading Dislocation Density ◽  
Direct Growth

ABSTRACTInP and GaInP layers were heteroepitaxially grown on (100) Si substrates by atmospheric pressure MOCVD. TEM and photoluminescence (PL) were used to measure the defect density and the minority carrier lifetime in these structures. The direct growth of InP on Si resulted in either polycrystalline or heavily faulted single-crystal layers. The use of GaAs buffer layers in InP/Si structures gave rise to significantly improved morphology and reduced the threading dislocation density. The best InP/Si layers in this study were obtained by using GaAs-GaInAs graded buffers. Additionally, the growth of high quality GaInP on Si was demonstrated. The minority carrier lifetime of 7 ns in these layers is the highest of any III-V/Si semiconductor measured in our laboratory.

Deep centers in GaN layers grown on epitaxial lateral overgrowth templates by metalorganic chemical vapor deposition

2006 ◽  
Vol 955 ◽  
Author(s):  
Serguei A Chevtchenko ◽  
J. Xie ◽  
Y. Fu ◽  
X. Ni ◽  
H. Morkoç
Keyword(s):  
Deep Level ◽  
Reference Sample ◽  
Chemical Vapor ◽  
Dislocation Core ◽  
Epitaxial Lateral Overgrowth ◽  
Threading Dislocation ◽  
Lateral Overgrowth ◽  
Threading Dislocation Density ◽  
Line Defects ◽  
Transient Spectroscopy

ABSTRACTThe dependence of traps and their concentration in GaN on the quality of templates, on which the layers are grown, has been studied by deep-level transient spectroscopy (DLTS). Thin GaN layers studied were grown on GaN templates employing conventional epitaxial lateral overgrowth (ELO) and nano-ELO with SiNx nanonetwork. The concentrations of traps found in these layers were compared with a reference sample grown on a standard GaN template not utilizing ELO. Two traps A (0.55 eV – 0.58 eV) and B (0.20 eV – 0.23 eV) were detected in the temperature range from 80 K to 400 K. A reduction of traps in layers grown on the ELO and nano-ELO templates was noted. We attribute this reduction to the reduction of threading dislocation density and as a result reduced capture of point defects and complexes as part of dislocation core structure and/or reduced formation of defects and complexes in the vicinity of line defects where the formation can be energetically favorable.

The Reduction of The Defect Density in CdTe Buffer Layers for The Growth of HgCdTe Infrared Photodiodes on Si (211) Substrates

1997 ◽  
Vol 484 ◽  
Author(s):  
H.-Y. Wei ◽  
L. Salamanca-Riba ◽  
N. K. Dhar
Keyword(s):  
Dislocation Density ◽  
Defect Density ◽  
Three Dimensional ◽  
Buffer Layers ◽  
Threading Dislocation ◽  
Si Substrates ◽  
Migration Enhanced Epitaxy ◽  
Threading Dislocation Density ◽  
Order Of Magnitude ◽  
Cdte Buffer

CdTe epilayers were grown by molecular beam epitaxy on As-passivated nominal (211) Si substrates using thin interfacial ZnTe layers. By using thin recrystallized (initially amorphous) ZnTe buffei layers, we utilized migration enhanced epitaxy (MEE) in the ZnTe layer and overcome the tendency toward three dimensional nucleation. The threading dislocation densities in 8–9 tm thick CdTe films deposited on the recrystallized amorphous ZnTe films were in the range of 2 to 5 × 105 cm−2. In addition to the reduction of threading dislocation density, the interface between the ZnTe layers and the Si substrate is much smoother and the microtwin density is an order of magnitude lower than in regular MEE growth. In order to understand the initial nucleation mechanism of the ZnTe on the As precursor Si surface, we also grew ZnTe epilayers on Te precursor treated Si substrates. The growth mode, microtwin density, and threading dislocation density are compared for films grown on Si substrates with different surface precursors and grown by different growth methods.

Reduction of Defect Density in Heteroepitaxial GexSi1-x Grown on Patterned Si Substrates

1989 ◽  
Vol 160 ◽  
Author(s):  
E.A. Fitzgerald ◽  
Y.-H. Xie ◽  
J. Michel ◽  
P.E. Freeland ◽  
B.E. Weir
Keyword(s):  
Defect Density ◽  
Threading Dislocation ◽  
Patterned Substrate ◽  
Si Substrates ◽  
Molecular Beam Epitaxial ◽  
Etch Pit ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Electron Beam Induced Current ◽  
Molecular Beam Epitaxial Growth

AbstractWe have investigated the molecular beam epitaxial growth of GexSi1-x on small growth areas patterned in Si substrates. Electron beam induced current, etch-pit density measurements, transmission electron microscopy, and photoluminescence were used to compare dislocation densities in GexSi1-x on patterned and unpattemed substrates. We find a dramatic reduction in both misfit and threading dislocation densities for the patterned substrate growth. Our results also show that dislocation introduction is dominated by heterogeneous nucleation.

scholarly journals Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 330 ◽  
Author(s):  
Marina Baryshnikova ◽  
Yves Mols ◽  
Yoshiyuki Ishii ◽  
Reynald Alcotte ◽  
Han Han ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Defect Density ◽  
Bipolar Transistors ◽  
Monolithic Integration ◽  
Threading Dislocation ◽  
Contrast Imaging ◽  
Si Substrates ◽  
Selective Area ◽  
Transmission Electron ◽  
The Impact

Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic integration of lattice-mismatched III-V devices on Si substrates. It has been successfully applied to GaAs for the realization of nano-ridge (NR) laser diodes and heterojunction bipolar transistors on 300 mm Si wafers. In this report we extend NRE to GaSb for the integration of narrow bandgap heterostructures on Si. GaSb is deposited by selective area growth in narrow oxide trenches fabricated on 300 mm Si substrates to reduce the defect density by aspect ratio trapping. The GaSb growth is continued and the NR shape on top of the oxide pattern is manipulated via NRE to achieve a broad (001) NR surface. The impact of different seed layers (GaAs and InAs) on the threading dislocation and planar defect densities in the GaSb NRs is investigated as a function of trench width by using transmission electron microscopy (TEM) as well as electron channeling contrast imaging (ECCI), which provides significantly better defect statistics in comparison to TEM only. An InAs/GaSb multi-layer heterostructure is added on top of an optimized NR structure. The high crystal quality and low defect density emphasize the potential of this monolithic integration approach for infrared optoelectronic devices on 300 mm Si substrates.

The Reduction of The Defect Density in CdTe Buffer Layers for The Growth of HgCdTe Infrared Photodiodes on Si (211) Substrates

1997 ◽  
Vol 487 ◽  
Author(s):  
H.-Y. Wei ◽  
L. Salamanca-Riba ◽  
N. K. Dhar
Keyword(s):  
Dislocation Density ◽  
Defect Density ◽  
Three Dimensional ◽  
Buffer Layers ◽  
Threading Dislocation ◽  
Si Substrates ◽  
Migration Enhanced Epitaxy ◽  
Threading Dislocation Density ◽  
Order Of Magnitude ◽  
Cdte Buffer

CdTe epilayers were grown by molecular beam epitaxy on As-passivated nominal (211) Si substrates using thin interfacial ZnTe layers. By using thin recrystallized (initially amorphous) ZnTe buffer layers, we utilized migration enhanced epitaxy (MEE) in the ZnTe layer and overcome the tendency toward three dimensional nucleation. The threading dislocation densities in 8–9 μm thick CdTe films deposited on the recrystallized amorphous ZnTe films were in the range of 2 to 5 × 105 cm−2. In addition to the reduction of threading dislocation density, the interface between the ZnTe layers and the Si substrate is much smoother and the microtwin density is an order of magnitude lower than in regular MEE growth. In order to understand the initial nucleation mechanism of the ZnTe on the As precursor Si surface, we also grew ZnTe epilayers on Te precursor treated Si substrates. The growth mode, microtwin density, and threading dislocation density are compared for films grown on Si substrates with different surface precursors and grown by different growth methods.

Effect of Substrate Misorientation on the Structual Strain and Defect Distribution of Mocvd Grown GaAs on Si

1988 ◽  
Vol 116 ◽  
Author(s):  
K.C. Hsieh ◽  
M.S. Feng ◽  
G.E. Stillman ◽  
C.R. Ito ◽  
D.G. McIntyre ◽  
...  
Keyword(s):  
Defect Density ◽  
Chemical Vapor ◽  
Asymmetric Distribution ◽  
Furnace Annealing ◽  
Double Crystal ◽  
Strain Anisotropy ◽  
Plan View ◽  
Defect Distribution ◽  
Si Substrates ◽  
Transmission Electron

Astract:A systematic study of the structural properties and defect distribution of GaAs layers grown by metalorganic chemical vapor deposition on Si substrates misoriented 1°, 1.5°, 2°, 4°, and 6° from [100] toward [011] is reported. Double crystal x-ray rocking curves, cross-section and plan-view Transmission Electron Microscopy (TEM) are used to characterize the structural strain and defect distribution of as-grown and annealed GaAs layers. Both strain and defect density in the GaAs layers are found to be dependent of the degree of substrate misorientation as well as the direction in which measurements are made. Plan-view TEM shows an asymmetric distribution of microtwins in two perpendicular directions. There exists a correlation between the directionality of the strain and of the defect density. Furnace annealing at 850°C for 30 minutes in an arsine overpressure can reduce significantly the defects, the strain and the strain anisotropy. It is found that microtwins are of the highest density when the substrate is misoriented about 4 degrees for the as-grown samples. Though a reduction of defects after annealing occurs for all samples, the least misoriented one shows the most improvement.

scholarly journals Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate

2018 ◽  
Vol 2018 ◽  
pp. 1-8
Author(s):  
Chao Zhang ◽  
Jianjun Song ◽  
Jie Zhang ◽  
Shulin Liu
Keyword(s):  
Epitaxial Layer ◽  
Lattice Mismatch ◽  
Defect Density ◽  
Low Cost ◽  
Threading Dislocation ◽  
Si Substrate ◽  
Si Substrates ◽  
Laser Recrystallization ◽  
Threading Dislocation Density ◽  
Physics Model

The high-Ge-content SiGe material on the Si substrate can be applied not only to electronic devices but also to optical devices and is one of the focuses of research and development in the field. However, due to the 4.2% lattice mismatch between Si and Ge, the epitaxial growth of the high-Ge-content SiGe epitaxial layer directly on the Si substrate has a high defect density, which will seriously affect the subsequent device performance. Laser recrystallization technique is a fast and low-cost method to effectively reduce threading dislocation density (TDD) in epitaxial high-Ge-content SiGe films on Si. In this paper, by means of finite element numerical simulation, a 808 nm laser recrystallization thermal physics model of a high-Ge-content SiGe film (for example, Si0.2Ge0.8) on a Si substrate was established (temperature distribution physical model of Si0.2Ge0.8 epitaxial layer under different laser power, Si0.2Ge0.8 epitaxial layer thickness, and initial temperature). The results of this paper can provide important technical support for the preparation of high-quality high-Ge-content SiGe epilayers on Si substrates by laser recrystallization.

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