In-Situ Temperature Control for Rtp Via Thermal Expansion Measurement

1993 ◽  
Vol 303 ◽  
Author(s):  
Bruce Peuse ◽  
Allan Rosekrans
Keyword(s):  
Thermal Expansion ◽  
Temperature Control ◽  
Measurement Technique ◽  
Preliminary Data ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Processing System ◽  
Wafer Temperature ◽  
Thermal Expansion Measurement

ABSTRACTA new method of temperature control for rapid thermal processing of silicon wafers is presented whereby in-situ wafer temperature is determined by measurement of wafer thermal expansion via an optical micrometer mechanism. The expansion measurement technique and its implementation into a rapid thermal processing system for temperature control are described. Preliminary data show the wafer to wafer temperature repeatability to be 1% (3-σ) using this technique.

Temperature Monitoring by Ripple Pyrometry in Rapid Thermal Processing

1996 ◽  
Vol 429 ◽  
Author(s):  
Binh Nguyenphu ◽  
Minseok Oh ◽  
Anthony T. Fiory
Keyword(s):  
Temperature Control ◽  
Integrated Circuit ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Back Side ◽  
Integrated Circuit Manufacturing ◽  
Current Trends ◽  
Processing Steps ◽  
Electrical Data

AbstractCurrent trends of silicon integrated circuit manufacturing demand better temperature control in various thermal processing steps. Rapid thermal processing (RTP) has become a key technique because its single wafer process can accommodate the reduced thermal budget requirements arising from shrinking the dimensions of devices and the trend to larger wafers. However, temperature control by conventional infrared pyrometry, which is highly dependent on wafer back side conditions, is insufficiently accurate for upcoming technologies. Lucent Technologies Inc., formerly known as AT&T Microelectronics and AT&T Bell Laboratories, has developed a powerful real-time pyrometry technique using the A/C ripple signal from heating lamps for in-situ temperature measurement. Temperature and electrical data from device wafers have been passively collected by ripple pyrometers in three RTP systems and analyzed. In this paper we report the statistical analysis of ripple temperature and electrical data from device wafers for a typical implant anneal process temperature range of 900 to 1000 °C.

Polysilicon Emitter Transistors Manufactured using a Novel Limited Reaction Processing System

1989 ◽  
Vol 146 ◽  
Author(s):  
Fred Ruddell ◽  
Colin Parkes ◽  
B Mervyn Armstrong ◽  
Harold S Gamble
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Processing System ◽  
Bipolar Transistors ◽  
Native Oxide ◽  
Plasma Oxidation ◽  
Oxide Removal ◽  
Polysilicon Emitter ◽  
Reaction Processing

ABSTRACTThis paper describes a LPCVD reactor which was developed for multiple sequential in-situ processing. The system is capable of rapid thermal processing in the presence of plasma stimulation and has been used for native oxide removal, plasma oxidation and silicon deposition. Polysilicon layers produced by the system are incorporated into N-P-N polysilicon emitter bipolar transistors. These devices fabricated using a sequential in-situ plasma clean-polysilicon deposition schedule exhibited uniform gains limited to that of long single crystal emitters. Devices with either plasma grown or native oxide layers below the polysilicon exhibited much higher gains. The suitability of the system for sequential and limited reaction processing has been established.

In-situ emissivity and temperature measurement during rapid thermal processing (RTP)

1992 ◽  
Vol 260 ◽  
Author(s):  
P. Vandenabeele ◽  
R. J. Schreutelkamp ◽  
K. Maex ◽  
C. Vermeiren ◽  
W. Coppye
Keyword(s):  
Thin Film ◽  
Temperature Measurement ◽  
Measurement Technique ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temperature Determination ◽  
Optical Detector ◽  
Accurate Temperature ◽  
Temperature Measurement Technique

ABSTRACTA prototype RTP system has been developed which allows for in-situ emissivity and temperature measurements. The wafer emissivity is measured by using an optical detector at a wavelength of 2.4 μm and by modulation of the lamp power. This method permits accurate temperature determination in the range from 400 to 1200°C, independent of wafer backside roughness, backside layers, and transmit tance. The feasibility of the temperature measurement technique is demonstrated by using wafers with built-in thermocouples and highly As-doped wafers with different backside roughnesses or layers. The emissivity variations during processing can also be used to study thin film reactions in-situ. This is demonstrated for Co silicidation using probing wavelengths varying from 0.6 to 3.2 μm.

Temperature Control and Temperature Uniformity During Rapid Thermal Processing

1991 ◽  
Vol 224 ◽  
Author(s):  
Peter Vandenabeele ◽  
Karen Maex
Keyword(s):  
Temperature Control ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Temperature Uniformity ◽  
Chamber Design

AbstractAn overview is given of the major problems in temperature control and uniformity control. For temperature control varying emissivity due to layers, roughness, doping and chamber design are discussed, together with problems due to lamp radiation. The main way to go seems to be in-situ emissivity correction. For uniformity control, the main problems are non-uniform reflector radiation and patteren induced non-uniformity. The solution seems to be the design of a reflective chamber with uniform reflected radiation.

Epitaxial Silicon Layers Made by Reduced Pressure/Temperature CVD

1988 ◽  
Vol 129 ◽  
Author(s):  
J.L. Regolini ◽  
D. Bensahel ◽  
J. Mercier ◽  
C. D'Anterroches ◽  
A. Perio
Keyword(s):  
Thermal Processing ◽  
Atmospheric Pressure ◽  
Rapid Thermal Processing ◽  
Processing System ◽  
Epitaxial Silicon ◽  
Reduced Pressure ◽  
Selective Epitaxial Growth ◽  
Main Decomposition ◽  
Rate Limiting ◽  
Reactive Gas

ABSTRACTIn a rapid thermal processing system working at a total pressure of a few Torr, we have obtained selective epitaxial growth of silicon at temperatures as low as 650°C. When using SiH2Cl2 (DCS) as the reactive gas, no addition of HCl is needed. Nevertheless, using SiH4 below 950°C a small amount of HCl should be added.Some kinetic aspects of the two systems, DCS/HCI/H2 and SiH4/HCl/H2, are presented and discussed. For the DCS system, we show that the rate-limiting reactions are slightly different from those commonly accepted in the literature, where the results are from systems working at atmospheric pressure or in the 20-100 Torr range.Our model is based on the main decomposition of DCS, SiH2Cl→SiHCl + HCl, instead of the widely accepted reaction SiH2Cl2→SiCl2 + H2. This is the main reason why no extra HCl is required in the DCS/H2 system to obtain full selectivity from above 1000°C down to 650°C.

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