HgCdTe MBE Technology : A Focus On Chemical Doping

1993 ◽  
Vol 302 ◽  
Author(s):  
Owen K. Wu
Keyword(s):  
Double Layer ◽  
Focal Plane ◽  
Memory Effects ◽  
Current Status ◽  
Chemical Doping ◽  
Mbe Growth ◽  
Heterojunction Structure ◽  
P Type ◽  
Growth Technology

ABSTRACTHgCdTe MBE technology is becoming a mature growth technology for infrared focal plane array applications. The ability to dope HgCdTe with In(n-type) and As(p-type) dopants in-situ provides greater flexibilities for fabricating heterojunction devices. In this paper, we will first discuss the current status of HgCdTe MBE growth and then focus on the key results in the control of In(n-type) doping, various approaches and breakthroughs in the growth of As(p-type) doped HgCdTe and issues related to doping such as memory effects and dopants activation. In addition, device results from double layer heterojunction structure(DLHJ) will be briefly discussed.

HgCdTe MBE Technology: A Focus on Chemical Doping

1994 ◽  
Vol 299 ◽  
Author(s):  
Owen K. Wu
Keyword(s):  
Double Layer ◽  
Focal Plane ◽  
Memory Effects ◽  
Current Status ◽  
Chemical Doping ◽  
Mbe Growth ◽  
Heterojunction Structure ◽  
P Type ◽  
Growth Technology

AbstractHgCdTe MBE technology is becoming a mature growth technology for infrared focal plane array applications. The ability to dope HgCdTe with In(n-type) and As(p-type) dopants in-situ provides greater flexibilities for fabricating heterojunction devices. In this paper, we will first discuss the current status of HgCdTe MBE growth and then focus on the key results in the control of In(n-type) doping, various approaches and breakthroughs in the growth of As(p-type) doped HgCdTe and issues related to doping such as memory effects and dopants activation. In addition, device results from double layer heterojunction structure(DLHJ) will be briefly discussed.

P-Type Doping with Arsenic in MBE-HgCdTe Using Planar Doping Approach

1996 ◽  
Vol 450 ◽  
Author(s):  
F. Aqariden ◽  
P. S. Wijew Arnasuriya ◽  
S. Rujirawat ◽  
S. Sivananthan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Mbe Growth ◽  
In Situ Fabrication ◽  
P Type ◽  
Arsenic Incorporation ◽  
Planar Doping

ABSTRACTThe results of arsenic incorporation in HgCdTe (MCT) layers grown by molecular beam epitaxy (MBE) are reported. The incorporation into MBE-MCT was carried out by a technique called planar doping. Arsenic was successfully incorporated during the MBE growth or after a low temperature anneal as acceptors. These results are very promising for in-situ fabrication of advanced optoelectronic devices using HgCdTe material.

Boron Doping in Si-MBE

1991 ◽  
Vol 220 ◽  
Author(s):  
K. Eberl ◽  
S. S. Iyer ◽  
S. L. Delage ◽  
B. A. Ek ◽  
J. M. Cotte
Keyword(s):  
Substrate Temperature ◽  
Boron Doping ◽  
Source Material ◽  
Memory Effects ◽  
Lower Growth ◽  
Gas Source ◽  
Elemental Boron ◽  
P Type ◽  
Incorporation Efficiency

ABSTRACTWe have investigated p-type doping of Si and SiGc layers in M BE by using two different boron sources. One is a SiB alloy which is prepared in situ by melting elemental boron into Si. Typical B concentrations in the source material are a few percent. Doping levels within 1×1018 cm−3 and 5.5×1019 cm−3 can be adjusted within the temperature range of 350°C to 850°C. No indication of segregation or memory effects is found. The activation is between 90 and 100%. The second p-type doping source investigated is a diborane (B2H6) gas source. Diborane provides doping capability in the range between 1016. to 1020. The incorporation efficiency at 550°C is about 2×10'3. It depends on the diborane exposure and the substrate temperature. The activation at 550°C is above 90%. For lower growth temperatures the activation is considerably reduced. The problem of memory effects is discussed.

In Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD

2008 ◽  
Vol 600-603 ◽  
pp. 147-150 ◽  
Author(s):  
Guo Sheng Sun ◽  
Yong Mei Zhao ◽  
Liang Wang ◽  
Lei Wang ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Flow Rate ◽  
Gas Flow ◽  
Voltage Drop ◽  
Hole Concentration ◽  
Hole Mobility ◽  
Memory Effects ◽  
Aluminum Concentration ◽  
Pin Diodes ◽  
P Type

The in-situ p-type doping of 4H-SiC grown on off-oriented (0001) 4H-SiC substrates was performed with trimethylaluminum (TMA) and/or diborane (B2H6) as the dopants. The incorporations of Al and B atoms and their memory effects and the electrical properties of p-type 4H-SiC epilayers were characterized by secondary ion mass spectroscopy (SIMS) and Hall effect measurements, respectively. Both Al- and B-doped 4H-SiC epilayers were p-type conduction. It was shown that the profiles of the incorporated boron and aluminum concentration were in agreement with the designed TMA and B2H6 flow rate diagrams. The maximum hole concentration for the Al doped 4H-SiC was 3.52×1020 cm-3 with Hall mobility of about 1 cm2/Vs and resistivity of 1.6~2.2×10-2 Wcm. The heavily boron-doped 4H-SiC samples were also obtained with B2H6 gas flow rate of 5 sccm, yielding values of 0.328 Wcm for resistivity, 5.3×1018 cm-3 for hole carrier concentration, and 7 cm2/Vs for hole mobility. The doping efficiency of Al in SiC is larger than that of B. The memory effects of Al and B were investigated in undoped 4H-SiC by using SIMS measurement after a few run of doped 4H-SiC growth. It was clearly shown that the memory effect of Al is stronger than that of B. It is suggested that p-type 4H-SiC growth should be carried out in a separate reactor, especially for Al doping, in order to avoid the join contamination on the subsequent n-type growth. 4H-SiC PiN diodes were fabricated by using heavily B doped epilayers. Preliminary results of PiN diodes with blocking voltage of 300 V and forward voltage drop of 3.0 V were obtained.

Growth of Epitaxial IrSi3 Layers on Si(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
T. L. Lin ◽  
C. W. Nieh
Keyword(s):  
Surface Morphology ◽  
Molecular Beam ◽  
Solid Phase ◽  
Single Mode ◽  
Growth Conditions ◽  
Tem Analysis ◽  
Mbe Growth ◽  
Good Surface ◽  
Transmission Electron

AbstractEpitaxial IrSi3 films have been grown on Si (111) by molecular beam epitaxy (MBE) at temperatures ranging from 630 to 800 °C and by solid phase epitaxy (SPE) at 500 °C. Good surface morphology was observed for IrSi3 layers grown by MBE at temperatures below 680 °C, and an increasing tendency to form islands is noted in samples grown at higher temperatures. Transmission electron microscopy (TEM) analysis reveals that the IrSi3 layers grow epitaxially on Si(111) with three epitaxial modes depending on the growth conditions. For IrSi3 layers grown by MBE at 630 °C, two epitaxial modes were observed with ~ 50% area coverage for each mode. Single mode epitaxial growth was achieved at a higher MBE growth temperature, but with island formation in the IrSi3 layer. A template technique was used with MBE to improve the IrSi3 surface morphology at higher growth temperatures. Furthermore, single-crystal IrSi3 was grown on Si(111) at 500 °C by SPE, with annealing performed in-situ in a TEM chamber.

Low-Temperature LPCVD MEMS Technologies

2002 ◽  
Vol 729 ◽  
Author(s):  
Roger T. Howe ◽  
Tsu-Jae King
Keyword(s):  
Silicon Germanium ◽  
Polycrystalline Silicon ◽  
Rf Mems ◽  
Sige Layer ◽  
Copper Metallization ◽  
Si Films ◽  
P Type ◽  
Mems Process ◽  
Post Deposition

AbstractThis paper describes recent research on LPCVD processes for the fabrication of high-quality micro-mechanical structures on foundry CMOS wafers. In order to avoid damaging CMOS electronics with either aluminum or copper metallization, the MEMS process temperatures should be limited to a maximum of 450°C. This constraint rules out the conventional polycrystalline silicon (poly-Si) as a candidate structural material for post-CMOS integrated MEMS. Polycrystalline silicon-germanium (poly-SiGe) alloys are attractive for modular integration of MEMS with electronics, because they can be deposited at much lower temperatures than poly-Si films, yet have excellent mechanical properties. In particular, in-situ doped p-type poly-SiGe films deposit rapidly at low temperatures and have adequate conductivity without post-deposition annealing. Poly-Ge can be etched very selectively to Si, SiGe, SiO2 and Si3N4 in a heated hydrogen peroxide solution, and can therefore be used as a sacrificial material to eliminate the need to protect the CMOS electronics during the MEMS-release etch. Low-resistance contact between a structural poly-SiGe layer and an underlying CMOS metal interconnect can be accomplished by deposition of the SiGe onto a typical barrier metal exposed in contact windows. We conclude with directions for further research to develop poly-SiGe technology for integrated inertial, optical, and RF MEMS applications.

Real-Time Analysis Of In-Situ Spectroscopic Ellipsometric Data During Mbe Growth Of III-V Semiconductors

1991 ◽  
Vol 222 ◽  
Author(s):  
B. Johs ◽  
J. L. Edwards ◽  
K. T. Shiralagi ◽  
R. Droopad ◽  
K. Y. Choi ◽  
...  
Keyword(s):  
Real Time ◽  
Optical Constants ◽  
Growth Parameters ◽  
Ex Situ ◽  
Time Analysis ◽  
Mbe Growth ◽  
In Situ Data ◽  
Real Time Analysis

ABSTRACTA modular spectroscopic ellipsometer, capable of both in-situ and ex-situ operation, has been used to measure important growth parameters of GaAs/AIGaAs structures. The ex-situ measurements provided layer thicknesses and compositions of the grown structures. In-situ ellipsometric measurements allowed the determination of growth rates, layer thicknesses, and high temperature optical constants. By performing a regression analysis of the in-situ data in real-time, the thickness and composition of an AIGaAs layer were extracted during the MBE growth of the structure.

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