A Study of Dark Currents on Various Modified Surfaces of Mercuric Iodide Single Crystals

1993 ◽  
Vol 302 ◽  
Author(s):  
H. N. Jayatirtha ◽  
M. Azoulay ◽  
M.A. George ◽  
A. Burger
Keyword(s):  
Atomic Force Microscopy ◽  
High Resolution ◽  
Surface Modifications ◽  
Low Noise ◽  
Mercuric Iodide ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Modified Surfaces ◽  
Dark Currents

ABSTRACTThe surface modifications that occur on °-mercuric iodide surfaces during the fabrication process are crucial for the development of a low noise, high resolution X-ray spectrometer. In this study, we discuss the effects of surface treatments on the dark currents and the results are correlated with surface morphology studies that were carried out by the atomic force microscopy (AFM) technique.

scholarly journals Calibration of high-resolution X-ray tomography with atomic force microscopy

2000 ◽  
Vol 105 (6) ◽  
pp. 867 ◽  
Author(s):  
A.R. Kalukin ◽  
B. Winn ◽  
Y.X. Wang ◽  
C. Jacobsen ◽  
Z.H. Levine ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Resolution ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals Surface Modification of Polyethersulfone (PES) with UV Photo-Oxidation

Technologies ◽  
2021 ◽  
Vol 9 (2) ◽  
pp. 36
Author(s):  
Ibrahim Cisse ◽  
Sarah Oakes ◽  
Shreen Sachdev ◽  
Marc Toro ◽  
Shin Lutondo ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Contact Angle ◽  
Atomic Force Microscopy ◽  
Photoelectron Spectroscopy ◽  
Water Contact ◽  
X Ray ◽  
Force Microscopy ◽  
Photo Oxidation ◽  
Atomic Force ◽  
Modified Surfaces

Polyethersulfone (PES) films are widely employed in the construction of membranes where there is a desire to make the surface more hydrophilic. Therefore, UV photo-oxidation was studied in order to oxidize the surface of PES and increase hydrophilicity. UV photo-oxidation using low pressure mercury lamps emitting both 253.7 and 184.9 nm radiation were compared with only 253.7 nm photons. The modified surfaces were characterized using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and water contact angle (WCA) measurements. Both sets of lamps gave similar results, showing an increase of the oxygen concentration up to a saturation level of ca. 29 at.% and a decrease in the WCA, i.e., an increase in hydrophilicity, down to ca. 40°. XPS detected a decrease of sp2 C-C aromatic group bonding and an increase in the formation of C-O, C=O, O=C-O, O=C-OH, O-(C=O)-O, and sulphonate and sulphate moieties. Since little change in surface roughness was observed by AFM, the oxidation of the surface caused the increase in hydrophilicity.

Surface Morphology of Films Grown by Size-Selected Ta Nanoparticles

2013 ◽  
Vol 647 ◽  
pp. 732-737 ◽  
Author(s):  
Vidyadhar Singh ◽  
Cathal Cassidy ◽  
Murtaza Bohra ◽  
Antony Galea ◽  
Zafer Hawash ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
High Resolution ◽  
Sputter Deposition ◽  
Silicon Substrates ◽  
Contact Mode ◽  
X Ray ◽  
Force Microscopy ◽  
Spherical Structure ◽  
Atomic Force ◽  
Morphology Of Films

Tantalum nanoparticle (NP) films have been deposited on silicon substrates, using sputter deposition with gas aggregation. The resultant NP films have been characterized using high resolution atomic force microscopy and X-ray fluorescence spectroscopy. The films remain stable and the NPs maintain a spherical structure on annealing up to 600 °C. In addition to characterization, these NP films have been locally patterned by atomic force microscope scanning of the surface in contact mode.

scholarly journals Рост твердых растворов InAs-=SUB=-x-=/SUB=-Sb-=SUB=-1-x-=/SUB=- на отклоненных подложках GaAs(001) методом молекулярно-лучевой эпитаксии

2019 ◽  
Vol 53 (4) ◽  
pp. 512
Author(s):  
Е.А. Емельянов ◽  
А.В. Васев ◽  
Б.Р. Семягин ◽  
М.Ю. Есин ◽  
И.Д. Лошкарев ◽  
...  
Keyword(s):  
Solid Solution ◽  
Atomic Force Microscopy ◽  
High Resolution ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Molecular Form ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Influence Of Substrate

The influence of substrate misorientation degree on the composition and morphology of layers during molecular-beam epitaxy of InAsxSb1−x solid solutions on the GaAs surface was studied. The GaAs wafers with orientation (001), which were miscuted in the [110] direction by 0, 1, 2 and 5◦, were used as substrates. The growth of heterostructures was performed for temperatures of 310◦C and 380◦C (lower and upper boundaries for the temperature range of structurally perfect InAsx Sb1−x films formation, respectively). The influence of the arsenic molecular form (As2 or As4) on the composition of layers was studied. Studies of composition and structural properties were carried out using high-resolution X-ray diffractometry (HRXRD) and atomic force microscopy (AFM). It was established that in the series of misorientation from 0 to 5◦ the arsenic fraction x increases consecutively with the use of both flux of As2 and flux of As4 molecules. When the flux of As2 molecules is used, the fraction x increases insignificantly (in 1.05 times) with a rise of misorientation degree, but when using As4 molecules, x increases in 1.75 times. The increase of the growth temperature leads to the rise of the arsenic fraction in the solid solution. The morphology of the surface improves during increasing of misorientation degree at a low growth temperature and degrades at high temperatures.

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