Utilization of ß-Diketones for Etching and Cleaning of Metal Oxide and Sulfide Thin Films

1993 ◽  
Vol 300 ◽  
Author(s):  
Steven R. Droes ◽  
A. Jain ◽  
T.T. Kodas ◽  
M.J. Hampden-Smith ◽  
R. Muenchausen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Metal Oxides ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Analytical Techniques ◽  
Laser Deposition ◽  
Wafer Cleaning ◽  
Scanning Electron ◽  
Mechanism Of The Reaction

ABSTRACTWe are examining dry processes for wafer cleaning and producing patterned thin films of metal oxides. This research focuses on determining the kinetics and mechanism of the reaction between ß-diketones and selected metal oxides. Preliminary experiments indicated that CuO, MgO, PbO and ZnO all react readily with 1,1,1,5,5,5-hexafluoroacetylacetone (hfacH). Thin films of CuO and MgO were fabricated via pulsed laser deposition, characterized by various analytical techniques such as Rutherford Backscattering Spectrometry and Scanning Electron Microscopy, etched using hfacH, and then further characterized. Etching rates for CuO and MgO were measured in order to develop a mechanistic understanding of the reaction.

Fabrication of Ni–Al thin films by the pulsed laser deposition technique

1992 ◽  
Vol 7 (10) ◽  
pp. 2639-2642 ◽  
Author(s):  
R.K. Singh ◽  
Deepika Bhattacharya ◽  
S. Sharan ◽  
P. Tiwari ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
Nanosecond Laser ◽  
X Ray ◽  
Target Composition

We have fabricated Ni3Al and NiAl thin films on different substrates by the pulsed laser deposition (PLD) technique. A high energy nanosecond laser beam was directed onto Ni–Al (NiAl, Ni3Al) targets, and the evaporated material was deposited onto substrates placed parallel to the target. The substrate temperature was varied between 300 and 400 °C, and the substrate-target distance was maintained at approximately 5 cm. The films were analyzed using scanning electron microscopy, transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry. At energy densities slightly above the evaporation threshold, a slight enrichment of Al was observed, while at higher energy densities the film stoichiometry was close (<5%) to the target composition. Barring a few particles, the surface of the films exhibited a smooth morphology. X-ray and TEM results corroborated the formation of Ni3Al and NiAl films from similar target compositions. These films were characterized by small randomly oriented grains with grain size varying between 200 and 400 Å.

Heteroepitaxial Growth of c-Axis-Oriented BaTiO3:Ce/YBa2Cu3O7-x Bilayer Structure on SrTiO3(100) by Pulsed Laser Deposition

1997 ◽  
Vol 11 (02n03) ◽  
pp. 73-79 ◽  
Author(s):  
Chunling Li ◽  
Yanwei Liu ◽  
Yueliang Zhou ◽  
Zhenghao Chen ◽  
Hong Chen ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Bilayer Structure ◽  
Heteroepitaxial Growth ◽  
High Degree ◽  
Scanning Electron

c-axis-oriented BaTiO 3 :Ce/YBa 2 Cu 3 O 7-x bilayers have been epitaxially grown on the SrTiO 3(100) substrates by pulsed laser deposition. The crystal structure and epitaxial orientation of the films have been analyzed by the XRD θ/2θ, ω and ϕ scans, and the results indicate that the bilayer thin films have high degree of c-axis-oriented epitaxial crystalline structure. The surface morphology of the thin films was revealed by scanning electron microscopy (SEM). The ferroelectricity of the BaTiO 3 :Ce thin films was verified by the P-E hysteresis loop.

Growth and Microstructure of Aluminum Nitride Thin Films

1991 ◽  
Vol 226 ◽  
Author(s):  
M. Grant Norton ◽  
Paul G. Kotula ◽  
Jian Li ◽  
Stuart Mckernan ◽  
Kathryn P.B. Cracknell ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Aluminum Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Single Crystal Sapphire ◽  
Scanning Electron

AbstractThe synthesis of aluminum nitride thin films by pulsed-laser ablation is demonstrated. The films were formed on single-crystal sapphire and graphite substrates. A number of techniques were used to characterize the films: transmission and scanning electron microscopy, Rutherford backscattering spectrometry and x-ray diffraction.

(111)p microtwinning in SrRuO3 thin films on (001)p LaAlO3

2009 ◽  
Vol 65 (6) ◽  
pp. 694-698 ◽  
Author(s):  
Y. Han ◽  
I. M. Reaney ◽  
D. S. Tinberg ◽  
S. Trolier-McKinstry
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Orientation Relationship ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Zone Axis ◽  
Laser Deposition ◽  
Transmission Electron ◽  
Diffraction Patterns

SrRuO3 (SRO) thin films grown on (001)p (p = pseudocubic) oriented LaAlO3 (LAO) by pulsed laser deposition have been characterized using transmission electron microscopy. Observations along the 〈100〉p directions suggests that although the SRO layer maintains a pseudocube-to-pseudocube orientation relationship with the underlying LAO substrate, it has a ferroelastic domain structure associated with a transformation on cooling to room temperature to an orthorhombic Pbnm phase (a − a − c + Glazer tilt system). In addition, extra diffraction spots located at ±1/6(ooo)p and ±1/3(ooo)p (where `o' indicates an index with an odd number) positions were obtained in 〈110〉p zone-axis diffraction patterns. These were attributed to the existence of high-density twins on {111}p pseudocubic planes within the SrRuO3 films rather than to more conventional mechanisms for the generation of superstructure reflections.

Influence of the Growth Atmosphere on the Properties of AIN Grown by Plasma - Assisted Pulsed Laser Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
T. Ogawa ◽  
M. Okamoto ◽  
Y. Mori ◽  
T. Sasaki
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Nitrogen Plasma ◽  
Laser Deposition ◽  
Nitrogen Gas ◽  
Growth Atmosphere ◽  
Cathodoluminescence Study

AbstractWe have grown highly oriented aluminum nitride (AIN) thin films on Si (100) substrates by using pulsed laser deposition from sintering AIN targets. Three different growth environments, vacuum, nitrogen gas, and nitrogen plasma, have been used in order to investigate the effect of the ambient on the film quality. Rutherford backscattering spectrometry suggests that the N/Al ratio increases when the AIN film is grown in a nitrogen-contained ambient. Cathodoluminescence study implies the decrease of oxygen content in the film grown in a nitrogen plasma ambient.

Pulsed Laser Deposition of Bi4Ti3O12 Thin Films on Indium Tin Oxide Coated Glass

1994 ◽  
Vol 343 ◽  
Author(s):  
H-J. Cho ◽  
William Jo ◽  
T. W. Noh
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Leakage Current ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Chemical Compositions ◽  
Coated Glass

ABSTRACTBi4Ti3O12 thin films have been grown on indium tin oxide coated glass by pulsed laser deposition. The films are rapidly thermal annealed at 650 °C in various kinds of ambients. X-ray diffraction and scanning electron microscopy are used to investigate crystallization and microstructures, respectively. Using Auger electron microscopy, chemical compositions and depth profiles are examined. Optical and current-voltage characteristics measurements of the films show that their transmittance and leakage current behaviors are strongly dependent upon the microstructures. O2 partial pressure in the rapid thermal annealing process is found to be an important parameter which determines crystallization, microstructures, and leakage current behaviors of the Bi4Ti3O12 thin films.

Pulsed laser deposition and characterization of conductive RuO2 thin films

1997 ◽  
Vol 12 (6) ◽  
pp. 1433-1436 ◽  
Author(s):  
A. Iembo ◽  
F. Fuso ◽  
E. Arimondo ◽  
C. Ciofi ◽  
G. Pennelli ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Surface Characteristics ◽  
Laser Deposition ◽  
X Ray ◽  
Substrate Interface

RuO2 thin films have been produced on silicon-based substrates by in situ pulsed laser deposition for the first time. The electrical properties, the surface characteristics, the crystalline structure, and the film-substrate interface of deposited samples have been investigated by 4-probe resistance versus temperature technique, scanning electron microscopy, x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy, respectively. The films show good electrical properties. The RuO2-substrate interface is very thin (≈3 nm), since it is not degraded by any annealing process. These two characteristics render our films suitable to be used as electrodes in PZT-based capacitors.

Deposition of MgB2 Thin Films on Nb Substrates Using an In Situ Annealing PLD Method

2007 ◽  
Vol 546-549 ◽  
pp. 2027-2030 ◽  
Author(s):  
Yue Zhao ◽  
Yi Sun Wu ◽  
S.X. Dou ◽  
T. Tajima ◽  
O.S. Romanenko
Keyword(s):  
Thin Films ◽  
Large Scale ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Rf Cavities ◽  
Superconducting Rf ◽  
Mgb2 Thin Films ◽  
Scanning Electron

MgB2 thin films have been coated on Nb substrates without any buffer layers. An in situ pulsed laser deposition (PLD) method was used to prepare the coating. The interface between films and substrates has been characterized by scanning electron microscopy (SEM). Surface impedance has been measured for the MgB2 films on Nb substrates. The results were discussed with regard to the potential large scale applications in superconducting RF cavities.

Electron microscopy studies of octa-calcium phosphate thin films obtained by pulsed laser deposition

2004 ◽  
Vol 453-454 ◽  
pp. 157-161 ◽  
Author(s):  
Monica Iliescu ◽  
V. Nelea ◽  
J. Werckmann ◽  
I.N. Mihailescu ◽  
G. Socol ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Calcium Phosphate ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

Nanocrystalline Er:YAG thin films prepared by pulsed laser deposition: An electron microscopy study

2007 ◽  
Vol 253 (19) ◽  
pp. 8268-8272 ◽  
Author(s):  
Daniela Stanoi ◽  
Andrei Popescu ◽  
Corneliu Ghica ◽  
Gabriel Socol ◽  
Emanuel Axente ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Laser Deposition
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