Deposition of Tin by Electron Cyclotron Resonance - Metal Organic Molecular Beam Epitaxy

1993 ◽  
Vol 300 ◽  
Author(s):  
P. W. Wisk ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
F. Ren ◽  
A. Katz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Index Of Refraction ◽  
Group V ◽  
Si Substrates ◽  
Metal Organic ◽  
Nitrogen Plasmas

ABSTRACTWe have investigated the feasibility of depositing TiN from nitrogen plasmas by Electron Cyclotron Resonance – Metal Organic Molecular Beam Epitaxy (ECR-MOMBE). Growth rate, index of refraction and resistivity were evaluated as a function of growth temperature and group V flow. It was found that TiN could be deposited at reasonable growth rates on either GaAs or Si substrates. However, the resistivity of the materia is quite high, >1700 µΩ-cm, probably because of significant carbon uptake into the layers.

Growth of GaN, AlN and InN by Electron Cyclotron Resonance-Metal Organic Molecular Beam Epitaxy

1992 ◽  
Vol 282 ◽  
Author(s):  
P. W. Wisk ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
F. Ren ◽  
J. R. Lothian ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Sapphire Substrates ◽  
Metal Organic ◽  
High Carrier ◽  
Nitrogen Plasmas

ABSTRACTWe have investigated the feasibility of depositing GaN, AIN and InN from nitrogen plasmas by electron cyclotron resonance-metal organic molecular beam epitaxy (ECR-MOMBE). Growth rate, morphology, and resistivity were evaluated as function of growth temperature and group IB flux. It was found that stoichiometric materials could be deposited at reasonable growth rates on either GaAs or sapphire substrates. Low contact resistance, ∼5 × 10−7 Ω-cm2, can be obtained on In due to the high carrier concentrations, 1020 cm−3 obtained in this material.

Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy

1994 ◽  
Vol 9 (9) ◽  
pp. 2370-2378 ◽  
Author(s):  
S.N. Basu ◽  
T. Lei ◽  
T.D. Moustakas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Lattice Mismatch ◽  
Defect Density ◽  
Electron Cyclotron ◽  
Si Substrates ◽  
Zinc Blende

The microstructures of GaN films, grown on (001) and (111) Si substrates by a two-step method using Electron Cyclotron Resonance assisted-Molecular Beam Epitaxy (ECR-MBE), were studied by electron microscopy techniques. Films grown on (001) Si had a predominantly zinc-blende structure. The GaN buffer layer, grown in the first deposition step, accommodated the 17% lattice mismatch between the film and substrate by a combination of misoriented domains and misfit dislocations. Beyond the buffer layer, the film consisted of highly oriented domains separated by inversion domain boundaries, with a substantial decrease in the defect density away from the interface. The majority of defects in the film were stacking faults, microtwins, and localized regions having the wurtzite structure. The structure of the GaN films grown on (111) Si was found to be primarily wurtzite, with a substantial fraction of twinned zinc-blende phase. Occasional wurtzite grains, misoriented by a 30°twist along the [0001] axis, were also observed. A substantial diffusion of Si was seen in films grown on both substrates.

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