Growth of GaN, AlN and InN by Electron Cyclotron Resonance-Metal Organic Molecular Beam Epitaxy

1992 ◽  
Vol 282 ◽  
Author(s):  
P. W. Wisk ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
F. Ren ◽  
J. R. Lothian ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Sapphire Substrates ◽  
Metal Organic ◽  
High Carrier ◽  
Nitrogen Plasmas

ABSTRACTWe have investigated the feasibility of depositing GaN, AIN and InN from nitrogen plasmas by electron cyclotron resonance-metal organic molecular beam epitaxy (ECR-MOMBE). Growth rate, morphology, and resistivity were evaluated as function of growth temperature and group IB flux. It was found that stoichiometric materials could be deposited at reasonable growth rates on either GaAs or sapphire substrates. Low contact resistance, ∼5 × 10−7 Ω-cm2, can be obtained on In due to the high carrier concentrations, 1020 cm−3 obtained in this material.

Deposition of Tin by Electron Cyclotron Resonance - Metal Organic Molecular Beam Epitaxy

1993 ◽  
Vol 300 ◽  
Author(s):  
P. W. Wisk ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
F. Ren ◽  
A. Katz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Index Of Refraction ◽  
Group V ◽  
Si Substrates ◽  
Metal Organic ◽  
Nitrogen Plasmas

ABSTRACTWe have investigated the feasibility of depositing TiN from nitrogen plasmas by Electron Cyclotron Resonance – Metal Organic Molecular Beam Epitaxy (ECR-MOMBE). Growth rate, index of refraction and resistivity were evaluated as a function of growth temperature and group V flow. It was found that TiN could be deposited at reasonable growth rates on either GaAs or Si substrates. However, the resistivity of the materia is quite high, >1700 µΩ-cm, probably because of significant carbon uptake into the layers.

Structural Characterization of GaN Grown By Electron Cyclotron Resonance-Metalorganic Molecular Beam Epitaxy (ECR-MOMBE)

1994 ◽  
Vol 339 ◽  
Author(s):  
S. Bharatan ◽  
K. S. Jones ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
F. Ren
Keyword(s):  
Electron Microscopy ◽  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Structural Characterization ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Metalorganic Molecular Beam Epitaxy

ABSTRACTElectron cyclotron resonance-metalorganic molecular beam epitaxy (ECR-MOMBE) has been used to deposit cubic and hexagonal gallium nitride (GaN) on various substrates, namely GaAs, ZnO and Al2O3. This paper will report on the effect of the growth rate of the GaN layer on the surface morphology, as analyzed using scanning electron microscopy (SEM). Structural characterization of this material was conducted using cross-sectional transmission electron microscopy (XTEM) and x-ray diffraction. Conditions such as pre-deposition annealing, growth rate and growth temperature are critical in determining the phase and crystallinity of the deposited layers. These parameters were optimized to obtain the cubic GaN phase on GaAs substrates and single crystal wurtzitic GaN on ZnO and Al2O3 substrates.

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