Multi-Wavelength Ellipsometry for Effective Characterization of Thin Epitaxial Si1−xGex Layers on Silicon Substrate

1993 ◽  
Vol 298 ◽  
Author(s):  
Michael Eichler ◽  
Marita Weidner ◽  
Thomas Morgenstern
Keyword(s):  
Vapour Deposition ◽  
Chemical Vapour ◽  
Unknown Parameters ◽  
Double Crystal ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Multi Wavelength ◽  
Nondestructive Characterization

AbstractThe range of composition (x) is one of the parameters we often have to measure if Si1-xGex layers are generated by chemical vapour deposition (CVD). It is important in this case, in which way the optical properties of Si1-xGex layers depend on the range of composition. We are interested in using multi-wavelength ellipsometry as a technique for rapid, nondestructive characterization of these samples, without large preparations, especially for series of measurements (2D profiles or wafer-lots). The number of unknown parameters and the multiple solutions are reduced by using several wavelengths during the measurement. The calculation is prepared by the help of parameter-correlation based on results of spectroscopical ellipsometry. To examine the results, thickness and composition were controlled for selected samples by cross-sectional transmission electron microscopy (XTEM) and X-ray double crystal diffractometry (DCD).

Synthesis and Photoluminescence Properties of Novel SnO2 Zigzag Nanoribbons

2010 ◽  
Vol 97-101 ◽  
pp. 4213-4216
Author(s):  
Jian Xiong Liu ◽  
Zheng Yu Wu ◽  
Guo Wen Meng ◽  
Zhao Lin Zhan
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Ceramic Boat

Novel single-crystalline SnO2 zigzag nanoribbons have been successfully synthesized by chemical vapour deposition. Sn powder in a ceramic boat covered with Si plates was heated at 1100°C in a flowing argon atmosphere to get deposits on a Si wafers. The main part of deposits is SnO2 zigzag nanoribbons. They were characterized by means of X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and selected-area electron diffraction (SAED). SEM observations reveal that the SnO2 zigzag nanoribbons are almost uniform, with lengths near to several hundred micrometers and have a good periodically tuned microstructure as the same zigzag angle and growth directions. Possible growth mechanism of these zigzag nanoribbons was discussed. A room temperature PL spectrum of the zigzag nanoribbons shows three peaks at 373nm, 421nm and 477nm.The novel zigzag microstructures will provide a new candidate for potential application.

New Pathways to Heteroepitaxial GaN by Inorganic CVD Synthesis and Characterization of Related Ga-C-N Novel Systems

1996 ◽  
Vol 449 ◽  
Author(s):  
J. Kouvetakis ◽  
M. O’Keeffe ◽  
Louis Brouseau ◽  
J. McMurran ◽  
Darrick Williams ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Columnar Growth ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Single Source Precursor ◽  
Cvd Synthesis ◽  
Oriented Films ◽  
Cubic Structure

ABSTRACTWe describe the development of a new deposition method for thin oriented films of GaN on basal plane sapphire using an exclusively inorganic single-source precursor free of carbon and hydrogen, Cl2GaN3. The films have been characterized by Rutherford backscattering spectroscopy (RBS) and cross sectional transmission electron microscopy (TEM) for composition morphology and structure. RBS analysis confirmed stoichiometric GaN and TEM observations of the highly conformal films revealed heteroepitaxial columnar growth of crystalline wurrtzite material on sapphire. Auger and RBS oxygen and carbon resonance profiles indicated that the films were pure and highly homogeneous. We also report the reactions of Cl2GaN3 with organometallic nitriles to yield a crystalline, novel gallium carbon nitride of composition GaC3N3. Quantitative X-ray powder diffraction has been used to refine the cubic structure of this material which consists of Ga atoms octahedrally surrounded by on the average three C and three N atoms. The structurally analogous LiGaC4N4 phase has also been prepared and characterized.

scholarly journals Synthesis of Pt nanowires with the participation of physical vapour deposition

Open Physics ◽  
2016 ◽  
Vol 14 (1) ◽  
pp. 159-165
Author(s):  
Leszek A. Dobrzański ◽  
Marek Szindler ◽  
Mirosława Pawlyta ◽  
Magdalena M. Szindler ◽  
Paulina Boryło ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapour Deposition ◽  
Physical Vapour Deposition ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Transmission Electron ◽  
Conformal Coverage ◽  
Pt Nanowires

AbstractThe following paper presents the possibility of formation of Pt nanowires, achieved by a three-step method consisting of conformal deposition of a carbon nanotube and conformal coverage with platinum by physical vapour deposition, followed by removal of the carbonaceous template. The characterization of this new nanostructure was carried out through scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD).

Structural Characterization of MBE Grown (001) CdTe Films by Means of Transmission Electron Microscopy, Low Temperature Photoluminescence and Double Crystal Rocking Curves.

1986 ◽  
Vol 77 ◽  
Author(s):  
M. G. Burke ◽  
W. J. Choyke ◽  
N. J. Doyle ◽  
Z. C. Feng ◽  
M. H. Hanes ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Milling ◽  
Double Crystal ◽  
X Ray ◽  
Transmission Electron ◽  
Line Defects ◽  
Cdte Films ◽  
Means Of Transmission ◽  
Low Temperature Photoluminescence

ABSTRACTThe effects of chemical etching, mechanical thinning, and ion milling on the low temperature photoluminescence spectra of MBE grown (001) CdTe films are reported. Line defects observed by TEM are correlated with photoluminescence. It is shown that X-ray D.C.R.C, measurements in these films are weighted averages over the whole thickness of the films and therefore weakly reflect the structural perfection of the samples near the surface as deduced by photoluminescence.

Structural Properties of Microcrystalline Si Solar Cells

2001 ◽  
Vol 664 ◽  
Author(s):  
M. Luysberg ◽  
C. Scholten ◽  
L. Houben ◽  
R. Carius ◽  
F. Finger ◽  
...  
Keyword(s):  
Solar Cells ◽  
Structural Properties ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Special Importance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Si Solar Cells ◽  
Transmission Electron

ABSTRACTThe structural properties of nip-µc-Si:H solar cells are investigated by transmission electron microscopy, X-ray diffraction and Raman spectroscopy. Different structural compositions are obtained by variation of the gas mixture during preparation by plasma enhanced chemical vapour deposition. Nucleation and growth of the n-layer onto textured TCO substrate was found to be similar to the growth on glass substrates. The growth of the i-layer follows a local epitaxy. This implies that the structure of the n-layer is of special importance regarding the control of the microstructure in microcrystalline Si nip solar cells.

Synthesis and Characterization of A Metastable (SiC)aN4 Phase

1994 ◽  
Vol 354 ◽  
Author(s):  
C. Uslu ◽  
B. Park ◽  
D. B. Poker
Keyword(s):  
Cubic Phase ◽  
High Dose ◽  
Sensitive Detector ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Position Sensitive ◽  
New Phase

AbstractA metastable C-Si-N compound has been synthesized by high dose N+ implantation into polycrystalline /8-SiC (cubic phase). The thin films formed upon 100 keV implantations were characterized with respect to various ion doses and target temperatures. X-ray diffraction with a position-sensitive detector and cross-sectional transmission electron microscopy revealed that the as-implanted surfaces contained ∼0.15 jttm thick continuously-buried amorphous layers. Rutherford backscattering spectroscopy showed that the peak concentration of nitrogen saturated up to approximately 54 at. % with increasing doses, suggesting a new phase formation.

Structural and optical characterization of Si quantumdots in a SiC matrix

2010 ◽  
Vol 1260 ◽  
Author(s):  
Matthias Kuenle ◽  
Philipp Loeper ◽  
Marcel Rothfelder ◽  
Stefan Janz ◽  
Oliver Eibl ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Controlled Crystallization ◽  
Size Controlled ◽  
Field Imaging

AbstractAmorphous hydrogenated Si1-xCx/SiC multilayers consisting of alternating Si1-xCx and stoichiometric SiC layers were prepared using Plasma Enhanced Chemical Vapour Deposition (PECVD). Annealing at temperatures up to 1100°C was done targeting the size controlled crystallization of Si nanocrystals (NCs) in a SiC matrix. The influence of annealing temperature on the nanostructure of the multilayers was studied using Glancing Incidence X-ray Diffraction (GIXRD), Raman spectroscopy and Transmission Electron Microscopy (TEM). GIXRD reveal the crystallization of Si and SiC, when annealing temperatures exceed 900°C. The crystallization of Si and SiC was confirmed by TEM bright-field imaging and electron diffraction. Annealing at 900°C, leads to the formation of Si NCs with a size of 3 nm, whereas the SiC NCs also have a size of 3 nm. However, a large amount of Si is still amorphous as shown by Raman spectroscopy. Annealing at temperatures exceeding 900°C reduces the amorphous phase and a further growth of Si NCs occurs.

Deposition and characterization of crystalline conductive RuO2 thin films

1995 ◽  
Vol 10 (10) ◽  
pp. 2401-2403 ◽  
Author(s):  
Q.X. Jia ◽  
S.G. Song ◽  
S.R. Foltyn ◽  
X.D. Wu
Keyword(s):  
Thin Films ◽  
Room Temperature Resistivity ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Residual Resistance ◽  
X Ray ◽  
Transmission Electron ◽  
Residual Resistance Ratio ◽  
Temperature Resistivity

Highly conductive metal-oxide RuO2 thin films have been successfully grown on yttria-stabilized zirconia (YSZ) substrates by pulsed laser deposition. Epitaxial growth of RuO2 thin films on YSZ and the atomically sharp interface between the RuO2 and the YSZ substrate are clearly evident from cross-sectional transmission electron microscopy. A diagonal-type epitaxy of RuO2 on YSZ is confirmed from x-ray diffraction measurements. The crystalline RuO2 thin films, deposited at temperatures in the range of 500 °C to 700 °C, have a room-temperature resistivity of 35 ± 2 μω-cm, and the residual resistance ratio (R300 k/R4.2 k) is around 5 for the crystalline RuO2 thin films.

Lateral Epitaxial Overgrowth of InAs on (100) GaAs Substrates

2002 ◽  
Vol 744 ◽  
Author(s):  
Ganesan Suryanarayanan ◽  
Anish A. Khandekar ◽  
Brian E. Hawkins ◽  
Thomas F. Kuech ◽  
Susan E. Babcock
Keyword(s):  
Electron Microscopy ◽  
Extended Defects ◽  
Double Crystal ◽  
Cross Sectional ◽  
Lateral Epitaxial Overgrowth ◽  
X Ray ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Order Of Magnitude ◽  
Inas Thin Films

ABSTRACTThe microstructure of epitaxial InAs thin films grown by MOCVD on mask-patterned “LEO” (lateral epitaxial overgrowth) GaAs and on unpatterned GaAs substrates was studied using double-crystal x-ray diffraction, scanning electron microscopy and cross-sectional transmission electron microscopy. This paper describes the improvement in crystal quality (factor of 20 reduction in x-ray rocking curve width), the order of magnitude reduction in dislocation density, and the rearrangement of the remaining extended defects that were observed in the LEO material when compared to the film grown on the unpatterned wafer.

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