Local Crystal Orientation in Laser Annealed Silicon Using a Raman Microprobe

1983 ◽  
Vol 29 ◽  
Author(s):  
L. A. Farrow ◽  
J.B. Hopkins ◽  
G J Fisanick
Keyword(s):  
Crystal Structure ◽  
Raman Scattering ◽  
Crystal Orientation ◽  
Polarization Angle ◽  
Substrate Plane ◽  
Si Substrate ◽  
Intensity Measurements ◽  
Raman Microprobe ◽  
Destructive Analysis ◽  
Non Destructive

ABSTRACTIn this paper, we discuss the application of polarization selective Raman microprobe spectroscopy to the detailed, non-destructive analysis of the local crystal orientation of a polysilicon sample grown over SiO 2 pads and laser annealed. Intensity measurements taken as a function of input polarization angle are fit to an expression derived from the Raman scattering selection rules to calculate the angles by which the crystal structure is twisted within the original substrate plane, as well as the degree of tipping of the crystal plane away from the plane of the Si substrate. The results give some indication as to the direction of seeding during recrystallization.

Non Destructive Optical Analysis of Implanted Layers in GaAs by Raman Scattering and Spectroscopic Ellipsometry

1982 ◽  
Vol 14 ◽  
Author(s):  
Joseph Biellmann ◽  
Bernard Prevot ◽  
Claude Schwab ◽  
Jean-Bernard Theeten ◽  
Marko Erman
Keyword(s):  
Raman Scattering ◽  
Dielectric Function ◽  
Imaginary Part ◽  
Depth Profile ◽  
Spectroscopic Ellipsometry ◽  
Intensity Ratio ◽  
Optical Analysis ◽  
Lattice Potential ◽  
Destructive Analysis ◽  
Non Destructive

ABSTRACTNon destructive analysis by Raman Scattering (RS) and Spectroscopic Ellipsometry (SE) is demonstrated on B+- and Se+ shallow implanted GaAs. Qualitative informations are obtained from 1st and 2nd order RS spectra. The former are analysed using the intensity ratio of the T0 and L0 modes, which defines a lattice potential perfection scale. The SE analysis of the E1, E1 +Δ1 structure in the imaginary part of the dielectric function confirms the RS results and its multilayer analysis yields the depth profile of the implanted ions.

scholarly journals Discrimination of Falsified Erectile Dysfunction Medicines by Use of an Ultra-Compact Raman Scattering Spectrometer

Pharmacy ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 3
Author(s):  
Tomoko Sanada ◽  
Naoko Yoshida ◽  
Kazuko Kimura ◽  
Hirohito Tsuboi
Keyword(s):  
Raman Scattering ◽  
Raman Spectra ◽  
Principal Component ◽  
Detection Methods ◽  
Score Plot ◽  
Raman Scattering Spectroscopy ◽  
Standard Product ◽  
Destructive Analysis ◽  
Falsified Medicines ◽  
Non Destructive

Substandard and falsified medicines are often reported worldwide. An accurate and rapid detection method for falsified medicines is needed to prevent human health hazards. Raman scattering spectroscopy has emerged as a non-destructive analysis method for the detection of falsified medicines. In this laboratory study, Raman spectroscopy was performed to evaluate the applicability of the ultra-compact Raman scattering spectrometer (C13560). Principal component analysis (PCA) was also performed on the Raman spectra. This study analyzed tadalafil (Cialis), vardenafil (Levitra), and sildenafil (Viagra) tablets. We tested the standard product and products purchased from the internet (genuine or falsified). For Cialis and Levitra, all falsified tablets were identified by the Raman spectra and PCA score plot. For Viagra, the Raman spectra of some falsified tablets were almost comparable to the standard tablet. The PCA score plots of falsified tablets were dispersed, and some plots of falsified tablets were close to the standard tablet. In conclusion, C13560 was useful for the discrimination of falsified Cialis and Levitra tablets, whereas some falsified Viagra tablets had Raman spectra similar to that of the standard tablet. The development of detection methods that can be introduced in various settings may help prevent the spread of falsified products.

scholarly journals Raman Scattering Study on the Influence of E-Beam Bombardment on Si Electron Lens

Molecules ◽  
2021 ◽  
Vol 26 (9) ◽  
pp. 2766
Author(s):  
Geon-Woo Lee ◽  
Young-Bok Lee ◽  
Dong-Hyun Baek ◽  
Jung-Gon Kim ◽  
Ho-Seob Kim
Keyword(s):  
Electron Beam ◽  
Raman Scattering ◽  
Photoelectron Spectroscopy ◽  
Micro Electro Mechanical System ◽  
Si Substrate ◽  
X Ray ◽  
Electron Lens ◽  
Scattering Study ◽  
Pass Through ◽  
Non Destructive

Microcolumns have a stacked structure composed of an electron emitter, electron lens (source lens), einzel lens, and a deflector manufactured using a micro electro-mechanical system process. The electrons emitted from the tungsten field emitter mostly pass through the aperture holes. However, other electrons fail to pass through because of collisions around the aperture hole. We used Raman scattering measurements and X-ray photoelectron spectroscopy analyses to investigate the influence of electron beam bombardment on a Si electron lens irradiated by acceleration voltages of 0, 20, and 30 keV. We confirmed that the crystallinity was degraded, and carbon-related contamination was detected at the surface and edge of the aperture hole of the Si electron lens after electron bombardment for 24 h. Carbon-related contamination on the surface of the Si electron lens was verified by analyzing the Raman spectra of the carbon-deposited Si substrate using DC sputtering and a carbon rod sample. We report the crystallinity and the origin of the carbon-related contamination of electron Si lenses after electron beam bombardment by non-destructive Raman scattering and XPS analysis methods.

scholarly journals Структурные и электрические характеристики двухслойных тонких пленок Bi-=SUB=-4-=/SUB=-Ti-=SUB=-3-=/SUB=-O-=SUB=-12-=/SUB=-/(Ba,Sr)TiO-=SUB=-3-=/SUB=-, осажденных на кремниевую подложку методом высокочастотного распыления при повышенных давлениях кислорода

2019 ◽  
Vol 61 (2) ◽  
pp. 278
Author(s):  
А.С. Анохин ◽  
С.В. Бирюков ◽  
Ю.И. Головко ◽  
В.М. Мухортов
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Stable State ◽  
Angular Range ◽  
Substrate Plane ◽  
Polarization Direction ◽  
Si Substrate ◽  
Crystallite Orientation ◽  
External Voltage ◽  
Monoclinic Distortion

AbstractThe 400–450-nm-thick Bi_4Ti_3O_12 thin films with various orientations of crystallites with respect to a normal to the (100)Si substrate plane have been studied. It is established that the crystallite orientation can be controlled by varying the composition of the 4-nm-thick Ba_ x Sr_1 – _ x TiO_3 sublayer. The use of Ba_0.4Sr_0.6TiO_3 as a sublayer leads to the growth of the Bi_4Ti_3O_12 film in the single-crystal state with plane (001) parallel to the substrate plane and with a monoclinic distortion of the crystal structure. The Ba_0.8Sr_0.2TiO_3 sublayer is shown to lead to the formation of four crystallite orientations: (111), (117), (100), and (110) and two groups of domains in the Bi_4Ti_3O_12 film; the first group with the polarization direction p-erpendicularly to the substrate and the second group with the polarization directed in the angular range 45.2°–57° with respect to a normal to the substrate. It is shown that, in the Bi_4Ti_3O_12 film with the Ba_0.8Sr_0.2TiO_3 sublayer, the polarization is directed to the substrate and is switched to new stable state with the polarization direction from the substrate when applying an external voltage higher than a critical one (4 V).

scholarly journals Influences of Ga Doping on Crystal Structure and Polarimetric Pattern of SHG in ZnO Nanofilms

Nanomaterials ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 905 ◽  
Author(s):  
Hua Long ◽  
Ammar Habeeb ◽  
Dickson Kinyua ◽  
Kai Wang ◽  
Bing Wang ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Second Harmonic ◽  
Incident Light ◽  
Light Polarization ◽  
Nonlinear Susceptibility ◽  
Polarization Angle ◽  
Doped Zno ◽  
Non Destructive ◽  
Ga Doping ◽  
Sensitive Method

The second-harmonic generation (SHG) in gallium doped ZnO (GZO) nanofilms was studied. The Ga doping in GZO nanofilms influenced the crystal structure of the films, which affected SHG characteristics of the nanofilms. In our experiments, a strong SHG response was obtained in GZO nanofilms, which was excited by 790 nm femtosecond laser. It was observed that the Ga doping concentrations affected, not only the intensity, but also the polarimetric pattern of SHG in GZO nanofilms. For 5.0% doped GZO films, the SHG intensity increased about 70%. The intensity ratio of SHG between the incident light polarization angle of 90° and 0°changed with the Ga doping concentrations. It showed the most significant increase for 7.3% doped GZO films, with an increased ratio of c/a crystal constants. This result was attributed to the differences of the ratios of d33/d31 (the second-order nonlinear susceptibility components) induced by the crystal distortion. The results are helpful to investigate nanofilms doping levels and crystal distortion by SHG microscopy, which is a non-destructive and sensitive method.

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