Laser Photochemical Etching of GaP in KOH Aqueous Solutions

1983 ◽  
Vol 29 ◽  
Author(s):  
A. Wayne Johnson ◽  
Gary C. Tisone
Keyword(s):  
High Temperature ◽  
High Speed ◽  
Gallium Phosphide ◽  
Laser Intensity ◽  
Compound Semiconductor ◽  
Photochemical Etching ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Strained Layer Superlattices ◽  
Argon Ion

ABSTRACTGallium phosphide is an important III-V semiconductor material for fabricating strained layer superlattices and high-speed and high-temperature microelectronics. Etching of this compound semiconductor with conventional techniques presents problems which may be solved by photon-induced electro-chemistry. We have shown that rapid localized etching of n-GaP in KOH can be driven with the UV lines of an argon-ion laser. The level and type of doping and the laser intensity determine the etch rates, which are nearly 60 nm/sec at 3500 Wcm−2 for n-doped material.

Effects of varying argon ion laser intensity and exposure time on the ablation of atherosclerotic plaque

1988 ◽  
Vol 8 (1) ◽  
pp. 66-71 ◽  
Author(s):  
Sipke Strikwerda ◽  
Corinne Bott-Silverman ◽  
Norman B. Ratliff ◽  
Marlene Goormastic ◽  
Robert M. Cothren ◽  
...  
Keyword(s):  
Exposure Time ◽  
Atherosclerotic Plaque ◽  
Laser Intensity ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

High Speed Holocinematography with the Multiply Cavity–Dumped Argon-Ion Laser

1982 ◽  
Vol 30 (3) ◽  
pp. 75-78 ◽  
Author(s):  
W. Hentschel ◽  
K.-D. Merboldt ◽  
K. J. Ebeling ◽  
W. Lauterborn
Keyword(s):  
High Speed ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

Laser-Controlled Etching Of Chromium-Doped and N-Doped Gaas

1982 ◽  
Vol 17 ◽  
Author(s):  
Gary C. Tisone ◽  
A. Wayne Johnson
Keyword(s):  
Wavelength Region ◽  
Etching Process ◽  
Photochemical Etching ◽  
Argon Ion Laser ◽  
Diffusion Controlled ◽  
Ion Laser ◽  
Etch Rates ◽  
Argon Ion

ABSTRACTThe photochemical etching of chromium-doped and n-doped <100> GaAs in HNO3 and KOH is examined in the wavelength region of 334 to 514 nm from an argon-ion laser. The etching process is found to be not thermally controlled. The etch rates of chromium-doped GaAs agree with a diffusion-controlled model of the photochemically produced holes. For both types of GaAs, HNO3 is found to produce morphologically superior results.

scholarly journals High-speed photodamage cell selection using a frequency-doubled argon ion laser

Cytometry ◽  
1995 ◽  
Vol 19 (3) ◽  
pp. 209-216 ◽  
Author(s):  
Jan F. Keij ◽  
Ad C. Groenewegen ◽  
George B. J. Dubelaar ◽  
Jan W. M. Visser
Keyword(s):  
High Speed ◽  
Cell Selection ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

Laser Induced Etching for Generation of Si Nanocrystals and Spectroscopic Investigation of Morphology

2005 ◽  
Vol 23 ◽  
pp. 43-46
Author(s):  
H.S. Mavi ◽  
S. Rath ◽  
Arun Shukla
Keyword(s):  
Quantum Confinement ◽  
Silicon Nanocrystals ◽  
Laser Wavelength ◽  
Interconnected Network ◽  
Substrate Type ◽  
Argon Ion Laser ◽  
Si Nanocrystals ◽  
Ion Laser ◽  
Laser Induced Etching ◽  
Argon Ion

Laser-induced etching of silicon is used to generate silicon nanocrystals. The pore structure depends on the substrate type and etching laser wavelength. Porous silicon (PS) samples prepared by Nd:YAG laser (1.16 eV) etching of n-type substrate showed a fairly uniform and highly interconnected network of nearly circular pores separated by thin columnar boundaries, while no circular pits were produced by argon- ion laser (2.41 eV) etching under similar conditions. The size and size distribution of the nanocrystals are investigated by Raman and photoluminescence spectroscopies and analyzed within the framework of quantum confinement models.

Electron temperatures in a segmented-metal argon-ion laser

1972 ◽  
Vol 5 (10) ◽  
pp. 1807-1814 ◽  
Author(s):  
A Maitland ◽  
J C L Cornish
Keyword(s):  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

scholarly journals Spectroscopic Properties of Photoproduct of Hematoporphyrin Derivative Oligomer by Photoradiation of Argon-ion Laser

1988 ◽  
Vol 8 (4) ◽  
pp. 3-9
Author(s):  
Norio MIYOSHI ◽  
Takahiro SEKI ◽  
Shuichi KINOSHITA ◽  
Takashi KUSHIDA ◽  
Tsuyoshi NISHIZAKA ◽  
...  
Keyword(s):  
Spectroscopic Properties ◽  
Hematoporphyrin Derivative ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

scholarly journals Endoscopic phototherapy using argon ion laser for gastrointestinal tumors

1982 ◽  
Vol 3 (1) ◽  
pp. 35-38
Author(s):  
Masatoshi Esaki ◽  
Hideo Hiratsuka ◽  
Mamoru Hiyama ◽  
Osamu Ueda ◽  
Yukio Toda ◽  
...  
Keyword(s):  
Gastrointestinal Tumors ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion
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