Investigation Of Cavitation Bubble Dynamics By High Speed Ruby Laser And Argon Ion Laser Holocinematography

1978 ◽  
Author(s):  
Karl J. Ebeling
Keyword(s):  
Cavitation Bubble ◽  
High Speed ◽  
Ruby Laser ◽  
Bubble Dynamics ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

CW ruby laser pumped by an argon ion laser

1977 ◽  
Vol 13 (10) ◽  
pp. 808-809 ◽  
Author(s):  
M. Birnbaum ◽  
A. Tucker ◽  
C. Fincher
Keyword(s):  
Ruby Laser ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

High Speed Holocinematography with the Multiply Cavity–Dumped Argon-Ion Laser

1982 ◽  
Vol 30 (3) ◽  
pp. 75-78 ◽  
Author(s):  
W. Hentschel ◽  
K.-D. Merboldt ◽  
K. J. Ebeling ◽  
W. Lauterborn
Keyword(s):  
High Speed ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

Stimulated scattering and induced Bragg reflexion of light in liquid media. II. Experimental

1973 ◽  
Vol 334 (1597) ◽  
pp. 215-229 ◽  
Keyword(s):  
Dielectric Constant ◽  
Ruby Laser ◽  
Liquid Media ◽  
Stimulated Scattering ◽  
Comprehensive Investigation ◽  
Novel Technique ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Temporal And Spatial ◽  
Argon Ion

A novel technique for the investigation of stimulated scattering in liquid media is described. Bragg reflexion of the light of a continuous argon ion laser has been used to analyse the modulations of dielectric constant generated in liquid media by stimulated scattering of the light of a Q-switched ruby laser. The results obtained indicate that this technique allows a comprehensive investigation of the scattering phenomenon and is particularly suitable for studying the temporal and spatial variations of the modulations.

Fabrication and Testing of a Novel Microelectromechnical Device for the Study of Boiling Bubble Dynamics

2003 ◽  
Author(s):  
Saeed Moghaddam ◽  
Kenneth T. Kiger ◽  
Jean-Marc Henriette ◽  
Michael Ohadi
Keyword(s):  
Surface Temperature ◽  
High Speed ◽  
Sensor Array ◽  
Bubble Dynamics ◽  
Ccd Camera ◽  
Ion Laser ◽  
Net Flux ◽  
Argon Ion ◽  
The Heat Transfer Coefficient ◽  
Wall Surface Temperature

An array of 44 resistance temperature sensors with a radial resolution of 35 μm was fabricated around a re-entrant cavity (3 μm mouth diameter) on a thin silicon diaphragm with the intended purpose of obtaining highly resolved spatial and temporal measurements of the wall surface temperature during the boiling process. An Argon ion laser beam was used to provide a constant net flux of thermal energy to the backside of the diaphragm underneath the cavity and sensor area. This microsystem initiates and grows a single bubble at the center of the radial sensor array; all while the temperature variation underneath the bubble region during growth, departure, and rewetting is being measured with a frequency of 10 kHz. A high-speed CCD camera capable of taking over 3700 pictures per second is used to monitor the growth rate and departure process of the bubble from the surface, and correlated with the surface temperature measurement. The resulting temperature data can then be used to calculate the variation of the heat transfer coefficient under the bubble during the process of growth, departure, and rewetting. This experimental study provided unique experimental data to evaluate varieties of theories and speculations about the dynamics of bubbling at a microscale level. The focus of the current paper is on the details of the apparatus development and fabrication.

scholarly journals High-speed photodamage cell selection using a frequency-doubled argon ion laser

Cytometry ◽  
1995 ◽  
Vol 19 (3) ◽  
pp. 209-216 ◽  
Author(s):  
Jan F. Keij ◽  
Ad C. Groenewegen ◽  
George B. J. Dubelaar ◽  
Jan W. M. Visser
Keyword(s):  
High Speed ◽  
Cell Selection ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

The ruby laser: Pumped by a pulsed argon ion laser

1968 ◽  
Vol 4 (5) ◽  
pp. 392-392
Author(s):  
M. Birnbaum ◽  
C. Fincher
Keyword(s):  
Ruby Laser ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion

Laser Photochemical Etching of GaP in KOH Aqueous Solutions

1983 ◽  
Vol 29 ◽  
Author(s):  
A. Wayne Johnson ◽  
Gary C. Tisone
Keyword(s):  
High Temperature ◽  
High Speed ◽  
Gallium Phosphide ◽  
Laser Intensity ◽  
Compound Semiconductor ◽  
Photochemical Etching ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Strained Layer Superlattices ◽  
Argon Ion

ABSTRACTGallium phosphide is an important III-V semiconductor material for fabricating strained layer superlattices and high-speed and high-temperature microelectronics. Etching of this compound semiconductor with conventional techniques presents problems which may be solved by photon-induced electro-chemistry. We have shown that rapid localized etching of n-GaP in KOH can be driven with the UV lines of an argon-ion laser. The level and type of doping and the laser intensity determine the etch rates, which are nearly 60 nm/sec at 3500 Wcm−2 for n-doped material.

THE RUBY LASER: PUMPED BY A PULSED ARGON ION LASER

1968 ◽  
Vol 12 (7) ◽  
pp. 225-227 ◽  
Author(s):  
Milton Birnbaum ◽  
Curtis L. Fincher
Keyword(s):  
Ruby Laser ◽  
Argon Ion Laser ◽  
Ion Laser ◽  
Argon Ion
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