Limiting and Enhancement Effects in Laser Chemical Vapor Deposition

1983 ◽  
Vol 29 ◽  
Author(s):  
S. D. Allen ◽  
R. Y. Jan ◽  
S. M. Mazuk ◽  
K. J. Shin ◽  
S. D. Vernon

ABSTRACTLaser chemical vapor deposition (LCVD) is a modification of conventional CVD using a laser heat source. The film growth characteristics differ considerably from conventional CVD in several ways, however. The use of an optical heat source means that the optical properties of the film/substrate system must be considered, e.g., for metals deposited on absorbing substrates, the film thickness and diameter may “self-limit” in some cases because the deposited film reflects most of the laser energy. On the other hand, the small area heated in LCVD results in a different diffusion geometry and access to higher surface temperatures than are achievable when large areas are heated. For favorable reactant systems, these enhancement effects can yield fast deposition rates and line deposition scan speeds greater than 10 cm/sec. This paper will review results of pulsed and cw LCVD of predominantly metal films using visible and infrared lasers.

2007 ◽  
Vol 22 (5) ◽  
pp. 1275-1280 ◽  
Author(s):  
Y. Morikawa ◽  
M. Hirai ◽  
A. Ohi ◽  
M. Kusaka ◽  
M. Iwami

We have studied the heteroepitaxial growth of 3C–SiC film on an Si(100) substrate by plasma chemical vapor deposition using monomethylsilane, a single-molecule gas containing both Si and C atoms. We have tried to introduce an interval process, in which we decrease the substrate temperature for a few minutes at a suitable stage of film growth. It was expected that, during the interval process, stabilization such as desorption of nonreacted precursors and lateral diffusion of species produced at the initial stage of film growth would occur. From the results, it appears that the interval process using a substrate temperature of 800 °C effectively suppresses polycrystallization of 3C–SiC growth on the Si(100) surface


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