Equilibrium-State Density Profiles of Centrifuged Cakes of Flocculated Suspensions

1992 ◽  
Vol 289 ◽  
Author(s):  
Wei-Heng Shih ◽  
Wan Y. Shih ◽  
Seong-Il Kim ◽  
Ilhan A. Aksay

AbstractMany advanced ceramics are formed by colloidal consolidation using techniques such as sedimentation, centrifugation, or pressure filtration. In all these, the minimization of density variations of various colloidally-consolidated cakes has not been examined systematically until recently. Schilling et al. used γ-ray densitometry to study the density variations in a sedimented cake and showed that the sediment of a flocculated alumina suspension exhibited significant density variations within the cake whereas the sediment of a dispersed alumina suspension showed a constant density profile. Auzerais et al. used a medical X-ray computer tomography (CT) to study the settling of dispersed and flocculated silica suspensions and obtained similar results: The sedimented cake of a dispersed silica suspension was fairly uniform whereas those of flocculated silica suspensions exhibited significant density variations. However, Shih et al. examined pressure-filtered cakes of flocculated alumina suspensions with γ-ray densitometry and showed that the density profiles of pressure-filtered cakes of flocculated alumina suspensions were uniform, in contrast to their sedimentation counterparts which showed significant density variations. These studies illustrate that how the local density varies within a consolidated cake depends not only on the suspension conditions but also on how the suspensions are consolidated, e.g., the consolidation pressure.

1988 ◽  
Vol 26 (3) ◽  
pp. 161-164 ◽  
Author(s):  
Philip Rosen
Keyword(s):  
X Ray ◽  

2004 ◽  
Vol 33 (4) ◽  
pp. 601-604 ◽  
Author(s):  
K. Murata ◽  
H. Tamaki ◽  
H. Maki ◽  
N. Shibazaki
Keyword(s):  
X Ray ◽  
Be Star ◽  

New Astronomy ◽  
2012 ◽  
Vol 17 (8) ◽  
pp. 679-686 ◽  
Author(s):  
K.K. Singh ◽  
S. Bhattacharyya ◽  
N. Bhatt ◽  
A.K. Tickoo
Keyword(s):  
X Ray ◽  

1999 ◽  
Vol 567 ◽  
Author(s):  
Z. Yu ◽  
R. Droopad ◽  
J. Ramdani ◽  
J.A. Curless ◽  
C.D. Overgaard ◽  
...  

ABSTRACTSingle crystalline perovskite oxides such as SrTiO3 (STO) are highly desirable for future generation ULSI applications. Over the past three decades, development of crystalline oxides on silicon has been a great technological challenge as an amorphous silicon oxide layer forms readily on the Si surface when exposed to oxygen preventing the intended oxide heteroepitaxy on Si substrate. Recently, we have successfully grown epitaxial STO thin films on Si(001) surface by using molecular beam epitaxy (MBE) method. Properties of the STO films on Si have been characterized using a variety of techniques including in-situ reflection high energy electron diffraction (RHEED), ex-situ X-ray diffraction (XRD), spectroscopic ellipsometry (SE), Auger electron spectroscopy (AES) and atomic force microscopy (AFM). The STO films grown on Si(001) substrate show bright and streaky RHEED patterns indicating coherent two-dimensional epitaxial oxide film growth with its unit cell rotated 450 with respect to the underlying Si unit cell. RHEED and XRD data confirm the single crystalline nature and (001) orientation of the STO films. An X-ray pole figure indicates the in-plane orientation relationship as STO[100]//Si[110] and STO(001)// Si(001). The STO surface is atomically smooth with AFM rms roughness of 1.2 AÅ. The leakage current density is measured to be in the low 10−9 A/cm2 range at 1 V, after a brief post-growth anneal in O2. An interface state density Dit = 4.6 × 1011 eV−1 cm−2 is inferred from the high-frequency and quasi-static C-V characteristics. The effective oxide thickness for a 200 Å STO film is around 30 Å and is not sensitive to post-growth anneal in O2 at 500-700°C. These STO films are also robust against forming gas anneal. Finally, STO MOSFET structures have been fabricated and tested. An extrinsic carrier mobility value of 66 cm2 V−11 s−1 is obtained for an STO PMOS device with a 2 μm effective gate length.


1990 ◽  
Vol 209 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Sumiko Sakai ◽  
Saburo Ataka ◽  
Kenji Shibata

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.


2017 ◽  
Vol 73 ◽  
pp. 523-526 ◽  
Author(s):  
Gul Rooh ◽  
Arshad Khan ◽  
H.J. Kim ◽  
H. Park ◽  
Sunghwan Kim
Keyword(s):  
X Ray ◽  

2018 ◽  
Vol 866 (1) ◽  
pp. 69 ◽  
Author(s):  
Hai-Wu Pan ◽  
Weimin Yuan ◽  
Su Yao ◽  
S. Komossa ◽  
Chichuan Jin
Keyword(s):  
X Ray ◽  

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