Micro-Structure and Electrical Properties of Nanocrystalline Pt Thin Film Prepared By R.F. Sputtering

1992 ◽  
Vol 286 ◽  
Author(s):  
Xiangyang Mei ◽  
Mingde Tao ◽  
Hui Tan ◽  
Ying Han ◽  
Wei Tao
Keyword(s):  
Thin Film ◽  
Annealing Temperature ◽  
Average Diameter ◽  
Prepared Film ◽  
X Ray Diffraction ◽  
Micro Structure ◽  
Temperature Coefficient Of Resistance ◽  
X Ray ◽  
Transmission Electron ◽  
Cubic Structure

ABSTRACTNanocrystalline Pt (nc-Pt) thin film was prepared by R. F. sputtering on liquid N2 cooled substrate. Transmission Electron Microscopy (TEM)analyses clearly show that the as prepared film is constructed by numerous nanometer sized particles with average diameter of about 8-9nm. The interfaces between particles can be clearly seen and the interface width is about nmm. Electron Diffraction (ED) photograph and X-ray Diffraction (XRD) spectroscopy both confirm that the nanometer sized particles in the film are ultra fine crystallites with a cubic structure. The crystallite size increases gradually with annealing temperature. The temperature coefficient of resistance (TCR) of nc-Pt film are much lower than that of polycrystalline Pt film. DC conductivity and TCR also increase gradually with the increase of annealing temperature. It is suggested that the interfaces between the nanoorystallites greatly influence the properties of nc-Pt thin film.

scholarly journals A Study of Thin Film Resistors Prepared Using Ni-Cr-Si-Al-Ta High Entropy Alloy

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Ruei-Cheng Lin ◽  
Tai-Kuang Lee ◽  
Der-Ho Wu ◽  
Ying-Chieh Lee
Keyword(s):  
Annealing Temperature ◽  
Phase Evolution ◽  
Amorphous Structure ◽  
High Entropy Alloy ◽  
X Ray Diffraction ◽  
Temperature Coefficient Of Resistance ◽  
X Ray ◽  
High Entropy ◽  
Transmission Electron ◽  
Thin Film Resistors

Ni-Cr-Si-Al-Ta resistive thin films were prepared on glass and Al2O3substrates by DC magnetron cosputtering from targets of Ni0.35-Cr0.25-Si0.2-Al0.2casting alloy and Ta metal. Electrical properties and microstructures of Ni-Cr-Si-Al-Ta films under different sputtering powers and annealing temperatures were investigated. The phase evolution, microstructure, and composition of Ni-Cr-Si-Al-Ta films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). When the annealing temperature was set to 300°C, the Ni-Cr-Si-Al-Ta films with an amorphous structure were observed. When the annealing temperature was at 500°C, the Ni-Cr-Si-Al-Ta films crystallized into Al0.9Ni4.22, Cr2Ta, and Ta5Si3phases. The Ni-Cr-Si-Al-Ta films deposited at 100 W and annealed at 300°C which exhibited the higher resistivity 2215 μΩ-cm with −10 ppm/°C of temperature coefficient of resistance (TCR).

STUDY OF THE MICRO-STRUCTURE OF PtxSi ULTRA-THIN FILM

2011 ◽  
Vol 25 (21) ◽  
pp. 2925-2929 ◽  
Author(s):  
SHUANG LIU ◽  
CHARLES M. FALCO ◽  
ZHIYONG ZHONG
Keyword(s):  
Thin Film ◽  
Photoelectron Spectroscopy ◽  
Xps Analysis ◽  
X Ray Diffraction ◽  
Micro Structure ◽  
X Ray ◽  
Transmission Electron ◽  
Si Films ◽  
Pt Films ◽  
Thin Platinum

Ultra-thin platinum (Pt) films were deposited on Si (100) substrates at 160°C by magnetron sputtering and subsequently annealed to form silicides. The thickness of the Pt x Si films was found to be approximately 4 nm as determined by transmission electron microscopy (TEM). X-ray photoelectron spectroscopy (XPS) analysis shows that these films consist of PtSi and Pt 2 Si phases, and a multi-layer configuration of SiO x/ PtSi/Pt 2 Si/Si was detected by angle-resolved XPS. However, the Pt 3 Si phase was not detected by X-ray diffraction (XRD).

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Monodisperse Fe3O4/Fe Core/Shell Nanoparticles with Enhanced Magnetic Property

2011 ◽  
Vol 306-307 ◽  
pp. 410-415
Author(s):  
Li Sun ◽  
Fu Tian Liu ◽  
Qi Hui Jiang ◽  
Xiu Xiu Chen ◽  
Ping Yang
Keyword(s):  
Average Diameter ◽  
Chemical Precipitation ◽  
Precipitation Method ◽  
Core Shell ◽  
X Ray Diffraction ◽  
Shell Nanoparticles ◽  
X Ray ◽  
Transmission Electron ◽  
Shell Particles ◽  
Core Shell Nanoparticles

Core/shell type nanoparticles with an average diameter of 20nm were synthesized by chemical precipitation method. Firstly, Monodisperse Fe3O4 nanoparticles were synthesized by solvethermal method. FeSO4ž7H2O and NaBH4 were respectively dissolved in distilled water, then moderated Fe3O4 particles and surfactant(PVP) were ultrasonic dispersed into the FeSO4ž7H2O solution. The resulting solution was stirred 2 h at room temperature. Fe could be deposited on the surface of monodispersed Fe3O4 nanoparticles to form core-shell particles. The particles were characterized by using various experimental techniques, such as transmission electron microscopy (TEM), X-ray diffraction (XRD), AGM and DTA. The results suggest that the saturation magnetization of the nanocomposites is 100 emu/g. The composition of the samples show monodisperse and the sides of the core/shell nanoparticles are 20-30nm. It is noted that the formation of Fe3O4/Fe nanocomposites magnetite nanoparticles possess superparamagnetic property.

Influence of Alloying Additions on Enhancement of Soft Magnetic Properties Effect and Crystallization in FeXSiB (X=Cu, V, Co, Zr, Nb) Amorphous Alloys

2007 ◽  
Vol 130 ◽  
pp. 171-174 ◽  
Author(s):  
Z. Stokłosa ◽  
G. Badura ◽  
P. Kwapuliński ◽  
Józef Rasek ◽  
G. Haneczok ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Amorphous Alloys ◽  
Crystallization Process ◽  
Annealing Temperature ◽  
Magnetic Measurements ◽  
X Ray Diffraction ◽  
Soft Magnetic ◽  
X Ray ◽  
Second Stage ◽  
Transmission Electron

The crystallization and optimization of magnetic properties effects in FeXSiB (X=Cu, V, Co, Zr, Nb) amorphous alloys were studied by applying X-ray diffraction methods, high resolution transmission electron microscopy (HRTEM), resistometric and magnetic measurements. The temperatures of the first and the second stage of crystallization, the 1h optimization annealing temperature and the Curie temperature were determined for different amorphous alloys. Activation energies of crystallization process were obtained by applying the Kissinger method. The influence of alloy additions on optimization effect and crystallization processes was carefully examined.

Thermal quenching behavior of Er-doped silicon-rich SiO2 prepared by ion implantation

2004 ◽  
Vol 19 (9) ◽  
pp. 2699-2702 ◽  
Author(s):  
C.S. Zhang ◽  
H.B Xiao ◽  
Y.J. Wang ◽  
Z.J. Chen ◽  
X.L. Cheng ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Annealing Temperature ◽  
Thermal Quenching ◽  
X Ray Diffraction ◽  
X Ray ◽  
Radiative Processes ◽  
Transmission Electron ◽  
Weak Intensity ◽  
Er Doped

Erbium and silicon were dual implanted into thermally grown SiO2 film on Si (110) substrates, followed by thermal treatment at 700–1200 °C for 30 min. The microstructure was studied by transmission electron microscope and x-ray diffraction. When the implanted films were annealed at T > 900 °C, the silicon nanocrystals (nc-Si) enwrapped by amorphous silicon (a-Si) could be observed. The thermal quenching behavior at λ = 1.535 μm and its relation with the annealling temperature were also investigated. With increasing annealing temperature, the portion of a-Si and the thermal quenching both decreased. Efficient luminescence from Er ions and weak intensity thermal quenching were obtained from the sample annealed at 1100 °C. The role of a-Si in non-radiative processes at T > 100 K is discussed.

scholarly journals A Study on the Characteristics of Cu–Mn–Dy Alloy Resistive Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 118 ◽  
Author(s):  
Ho-Yun Lee ◽  
Chi-Wei He ◽  
Ying-Chieh Lee ◽  
Da-Chuan Wu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Annealing Temperature ◽  
Phase Evolution ◽  
Amorphous Structure ◽  
X Ray Diffraction ◽  
Temperature Coefficient Of Resistance ◽  
X Ray ◽  
Transmission Electronmicroscopy ◽  
Scanning Electron

Cu–Mn–Dy resistive thin films were prepared on glass and Al2O3 substrates, which wasachieved by co-sputtering the Cu–Mn alloy and dysprosium targets. The effects of the addition ofdysprosium on the electrical properties and microstructures of annealed Cu–Mn alloy films wereinvestigated. The composition, microstructural and phase evolution of Cu–Mn–Dy films werecharacterized using field emission scanning electron microscopy, transmission electronmicroscopy and X-ray diffraction. All Cu–Mn–Dy films showed an amorphous structure when theannealing temperature was set at 300 °C. After the annealing temperature was increased to 350 °C,the MnO and Cu phases had a significant presence in the Cu–Mn films. However, no MnO phaseswere observed in Cu–Mn–Dy films at 350 °C. Even Cu–Mn–Dy films annealed at 450 °C showedno MnO phases. This is because Dy addition can suppress MnO formation. Cu–Mn alloy filmswith 40% dysprosium addition that were annealed at 300 °C exhibited a higher resistivity of ∼2100 μΩ·cm with a temperature coefficient of resistance of –85 ppm/°C.

Sb-rich nanoinclusions in an AlGaAsSb metamaterial

MRS Advances ◽  
2019 ◽  
Vol 4 (5-6) ◽  
pp. 277-284
Author(s):  
Nikolay A. Bert ◽  
Vladimir V. Chaldyshev ◽  
Nikolay A. Cherkashin ◽  
Vladimir N. Nevedomskiy ◽  
Valery V. Preobrazhenskii ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Filling Factor ◽  
Local Thermodynamic Equilibrium ◽  
Average Diameter ◽  
Formation Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Organized ◽  
Transmission Electron ◽  
The Matrix

ABSTRACTWe studied the microstructure of Al0.28Ga0.72As0.972Sb0.028 metamaterials containing a developed array of AsSb nanoinclusions. The AlGaAsSb films were grown by low-temperature molecular-beam epitaxy followed by high-temperature annealing at 750°C. The process resulted in an array of self-organized AsSb nanonclusions with an average diameter of 15 nm. The volume filling factor was about 0.003. Using transmission electron microscopy and x-ray diffraction we showed that the nanoinclusions have A7-type rhombohedral atomic structure with the following orientation in the matrix (0003)p || {111}m and [-2110]p || 〈220〉m, where p and m indices indicate the AsSb precipitate and AlGaAsSb matrix, correspondingly. The nanoinclusions appeared to be strongly enriched by antimony (more than 90 atomic %), whereas the Sb content in the AlGaAsSb matrix was 2.8 atomic %. The strong enrichment of the inclusion with Sb resulted from the local thermodynamic equilibrium between the solid AlGaAsSb matrix and AsSb inclusions which became liquid at a formation temperature of 750°C.

Epitaxial growth of BaO and SrO with new crystal structures using mass-separated low-energy O+ beams

1993 ◽  
Vol 8 (2) ◽  
pp. 321-323 ◽  
Author(s):  
Ryusuke Kita ◽  
Takashi Hase ◽  
Hiromi Takahashi ◽  
Kenichi Kawaguchi ◽  
Tadataka Morishita
Keyword(s):  
Lattice Constant ◽  
High Energy ◽  
Low Energy ◽  
Diffraction Reflection ◽  
High Energy Electron ◽  
Bulk Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Cubic Structure

The growth of BaO and SrO on SrTiO3(100) substrates using mass-separated low-energy (50 eV) O+ beams has been studied using x-ray diffraction, reflection high-energy electron diffraction, and high-resolution transmission electron microscopy. It was found that the BaO and SrO films have been epitaxially grown with new structures different from those of corresponding bulk crystals: The BaO films have a cubic structure with a lattice constant of 4.0 Å, and the SrO films have a tetragonal structure with a lattice constant of a = 3.7 Å parallel to the substrate and with c = 4.0 Å normal to the substrate.

Electrical Properties of Multilayer Synthesized CuInSi Thin Film

2011 ◽  
Vol 383-390 ◽  
pp. 822-825
Author(s):  
Ping Luan ◽  
Jian Sheng Xie ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Time Effect ◽  
X Ray Diffraction ◽  
Testing Instrument ◽  
X Ray ◽  
Conductivity Type

Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

Sign in / Sign up

Export Citation Format

Share Document