Dependence of the Growth of Al2O3 Films on the Growth Conditions in the ALE-Like Process

1992 ◽  
Vol 284 ◽  
Author(s):  
Jia-Fa Fan ◽  
Koichi Toyoda
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Electrical Properties ◽  
Growth Temperature ◽  
Chemical Bonding ◽  
Bonding Strength ◽  
Molecular Beams ◽  
Growth Conditions ◽  
Al2o3 Films

ABSTRACTEffects of the growth conditions on the growth and the quality of thin films of Al2O3 were investigated in the ALE-like process. It has been found that the growth rate remains nearly independent of the growth conditions when the pulse heights are 80–120 mTorr and 20–160 mTorr for H2O2 and TMA respectively, the pulse duration longer than 0.3 s, the base pressure below 1 mTorr, and the growth temperature higher than 150°C. Also, we found that the density, the chemical bonding strength, and the electrical properties improved markedly with raising the growth temperature although the growth rate remained nearly constant. In addition, area-selective growth and partly polycrystalline films were favorably obtained by using pulsed molecular beams of TMA and H2O2 in the growth.

Study of the growth mechanism and properties of InN films grown by MOCVD

2003 ◽  
Vol 798 ◽  
Author(s):  
Abhishek Jain ◽  
Joan M. Redwing
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Growth Temperature ◽  
Room Temperature ◽  
Growth Conditions ◽  
Buffer Layers ◽  
Film Morphology ◽  
Buffer Layer Thickness ◽  
Aln Buffer

ABSTRACTThin films of InN were grown on (0001) Sapphire by MOCVD. The effect of growth conditions and buffer layer on the film morphology was studied. Growth temperature and TMI flow rate were important factors in the growth of InN. The use of a low temperature AlN buffer layer was also found to improve the morphology and crystal quality of the films. Thin (<40Å) AlN buffer layers produced the best results while polycrystalline InN was obtained when the buffer layer thickness exceeded 60Å. Delamination of the InN films was observed to occur at growth temperature, which limited the thickness of the films to less than 300 nm. A room temperature mobility of 792 cm2/Vs and an electron concentration of 2.1×1019 cm-3 were measured in an approximately 200 nm thick InN layer grown on sapphire.

scholarly journals Growth Temperature Influence on Atomic-Layer-Deposited In2O3 Thin Films and Their Application in Inorganic Perovskite Solar Cells

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2047
Author(s):  
Umme Farva ◽  
Hyeong Woo Lee ◽  
RiNa Kim ◽  
Dong-Gun Lee ◽  
Jeha Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Solar Cells ◽  
Electrical Properties ◽  
Growth Temperature ◽  
Film Growth ◽  
Perovskite Solar Cells ◽  
Atomic Layer ◽  
Optical And Electrical Properties ◽  
Film Growth Rate

Recently, indium oxide (In2O3) thin films have emerged as a promising electron transport layer (ETL) for perovskite solar cells; however, solution-processed In2O3 ETL suffered from poor morphology, pinholes, and required annealing at high temperatures. This research aims to carry out and prepare pinhole-free, transparent, and highly conductive In2O3 thin films via atomic layer deposition (ALD) seizing efficiently as an ETL. In order to explore the growth-temperature-dependent properties of In2O3 thin film, it was fabricated by ALD using the triethyl indium (Et3In) precursor. The detail of the ALD process at 115–250 °C was studied through the film growth rate, crystal structure, morphology, composition, and optical and electrical properties. The film growth rate increased from 0.009 nm/cycle to 0.088 nm/cycle as the growth temperature rose from 115 °C to 250 °C. The film thickness was highly uniform, and the surface roughness was below 1.6 nm. Our results confirmed that film’s structural, optical and electrical properties directly depend on film growth temperature. Film grown at ≥ 200 °C exhibited a polycrystalline cubic structure with almost negligible carbon impurities. Finally, the device ALD-In2O3 film deposited at 250 °C exhibited a power conversion efficiency of 10.97% superior to other conditions and general SnO2 ETL.

Study on TlBr Single Crystal Growth Using Improved Electro Dynamic Gradient Method

2011 ◽  
Vol 415-417 ◽  
pp. 1979-1982
Author(s):  
Zhi Ping Zheng ◽  
Jing Wang ◽  
Lin Quan ◽  
Shu Ping Gong ◽  
Dong Xiang Zhou
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Electrical Properties ◽  
Temperature Gradient ◽  
Growth Conditions ◽  
Single Crystal Growth ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
X Ray

Electro Dynamic Gradient (EDG) method was utilized for TlBr crystal growth in this paper. The influence of crystal growth conditions such as temperature gradient and growth rate on optical and electrical properties of grown TlBr crystals was investigated. The quality of TlBr crystals was characterized by infrared (IR) transmittance spectrum, X-ray diffraction, and I-V measurements.

Effect of Growth Temperature on Cobalt-Doped TiO2 Thin Films Deposited on Si (100) Substrate by MOCVD Technique

2014 ◽  
Vol 896 ◽  
pp. 192-196 ◽  
Author(s):  
Aip Saripudin ◽  
H. Saragih ◽  
Khairurrijal ◽  
Khairurrijal ◽  
Pepen Arifin
Keyword(s):  
Thin Films ◽  
Growth Temperature ◽  
Anatase Phase ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Vapor Deposition Technique ◽  
Metal Organic ◽  
Titanium Dioxide Thin Films ◽  
Organic Chemical Vapor Deposition

Co:TiO2 (cobalt-doped titanium dioxide) thin films have been deposited on the n-type Si (100) substrate at the temperatures range of 325°C 450°C using MOCVD (metal organic chemical vapor deposition) technique. We investigated the effect of growth temperature on the structural and morphological quality of Co:TiO2 thin films. The structure of Co:TiO2 thin films were characterized by XRD while the morphology and the thickness of films were characterized by SEM. The XRD results reveal that all films show the anatase structure and the dominant orientation of anatase phase depends on the growth temperature. The grain size of crystal increases as the growth temperature increases. We also reveal that the growth rate of Co:TiO2 film has a maximum value at the growth temperature of 400°C.

Electro-optic Mach-Zehnder modulators with polycrystalline BaTiO3 thin films on MgO

2002 ◽  
Vol 748 ◽  
Author(s):  
A. Petraru ◽  
J. Schubert ◽  
M. Schmid ◽  
O. Trithaveesak ◽  
Ch. Buchal
Keyword(s):  
Thin Films ◽  
Growth Temperature ◽  
Ion Beam ◽  
Growth Conditions ◽  
Propagation Loss ◽  
Ion Beam Etching ◽  
Waveguide Propagation ◽  
Electro Optic ◽  
Ridge Waveguides ◽  
Waveguide Modulators

ABSTRACTThe optical and electro-optical properties of epitaxially grown thin films of ferroelectric BaTiO3 on MgO substrates have been established and high quality Mach-Zehnder waveguide modulators have been demonstrated. As a next step towards the integration of ferroelectric thin films on different substrates, we have modified the growth conditions by lowering the growth temperature to study polycrystalline, but still highly transparent BaTiO3 (BTO) films. Polycrystalline BTO on MgO substrates has been grown by pulsed laser deposition (PLD). The growth temperature was reduced from 800 °C to 400 °C at an oxygen pressure of 2×10-3 mbar. Although polycrystalline, the BTO is still birefringent with no= 2.32 and ne = 2.30. Ridge waveguides have been formed by ion beam etching. The estimated waveguide propagation loss is 4 dB/cm at 633 nm. Electro-optic Mach-Zehnder modulators have been realized. Using 3 mm long electrodes with a spacing of 10 μm, a Vπ voltage of 14 V was obtained at 633 nm wavelength. This is half of the observed effective electro-optic coefficient measured at epitaxial BTO films. At 1.5 μm wavelength similar results were observed.

Magnetic Anisotropy of Strained La0.7Sr0.3MnO3 Thin Films Studied by MOKE

2001 ◽  
Vol 690 ◽  
Author(s):  
M. Koubaa ◽  
A.M. Haghiri-Gosnet ◽  
P. Lecoeur ◽  
W. Prellier ◽  
B. Mercey
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Scaling Law ◽  
Hysteresis Loops ◽  
Magnetic Behavior ◽  
Growth Conditions ◽  
Structural Quality ◽  
Lattice Strains ◽  
Stress States

ABSTRACTThe effects of the growth conditions and the lattice strains of pulsed laser deposited (PLD) La0.7Sr0.3MnO3 (LSMO) thin films upon the magnetic behavior have been studied using magneto-optical Kerr effect (MOKE) at room temperature. First, the structural quality of the films was investigated by XRD and the surface morphology was studied using AFM. It is shown that both surface morphology and crystallinity are optimized when the target-to-substrate distance and the oxygen pressure are chosen in agreement with a PD3 scaling law. Secondly, hysteresis loops have been recorded along the [100], [110] and [001] directions and the easy directions of magnetization have been determined for both stress states, i.e. tension on SrTiO3 and compression on LaAlO3. In tensile films, the whole plane is found to be easy, whereas, in compressive films, the easy axis should be an intermediate direction between the film's plane and its normal. Moreover, tensile films deposited under optimized growth conditions exhibit the largest anisotropy coefficient (K1eff = -6.9×105 erg/cm3).

Control of Grain Size of Pb(Zr,Ti)O3 Thin Films by MOCVD and the Effect of Size on the Electrical Properties

1998 ◽  
Vol 541 ◽  
Author(s):  
H. Fujisawa ◽  
S. Nakashima ◽  
M. Shimizu ◽  
H. Niu
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Grain Size ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Dielectric Constants ◽  
Pzt Thin Films ◽  
Pzt Films

AbstractThe grain size of MOCVD-Pb(Zr,Ti)O3 (PZT) thin films was successfully controlled by changing the grain size of Ir bottom electrodes and by changing the growth rate of PZT films. In Ir/PZT/Ir/SiO2/Si capacitors, the grain size of PZT thin films increased from 120 to 240nm as the grain size of bottom Ir electrodes increased from 50 to 200nm. The dielectric constants of PZT thin films increased from 760 to 1440 as the grain size increased from 120 to 240nm. Remanent polarization increased and coercive field decreased as the grain size increased. This dependence of electrical properties on the grain size coincided with that of ceramics.

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

2012 ◽  
Vol 198-199 ◽  
pp. 28-31
Author(s):  
Chun Ya Li ◽  
Xi Feng Li ◽  
Long Long Chen ◽  
Ji Feng Shi ◽  
Jian Hua Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Deposition Temperature ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
X Ray ◽  
Glass Substrates

Under different growth conditions, silicon Oxide (SiOx) thin films were deposited successfully on Si (100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The effects of deposition temperature on the structure and properties of SiOx films were studied using X ray diffraction (XRD), X ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. The results show that the SiOx films were amorphous at different deposition temperature. The peaks of Si2p and O1s shifted to higher binding energy with temperature increasing. The SiOx films had high transmissivity at the range of 400-900nm. By analyzing the observation and data, the influence of deposition parameters on the electrical properties and interface characteristics of SiOx thin film prepared by PECVD is systematically discussed. At last, SiOx thin film with excellent electrical properties and good interface characteristic is prepared under the relatively optimum parameters.

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