Excimer Lasbr Induced Crystallization of thin Amorphous Si Films on SiO2: Implications of Crystallized Microstructures for Phase Transformation Mechanisms

1992 ◽  
Vol 283 ◽  
Author(s):  
H. J. Kim ◽  
James S. Im ◽  
Michael O. Thompson
Keyword(s):  
Grain Size ◽  
Energy Density ◽  
Laser Energy ◽  
High Energy ◽  
High Energy Density ◽  
Laser Energy Density ◽  
Single Shot ◽  
Average Grain Size ◽  
Si Films ◽  
Density Regime

ABSTRACTUsing planar view transmission electron microscope (TEM) and transient reflectance (TR) analyses, we have investigated the excimer laser crystallization of amorphous silicon (a-Si) films on SiO2. Emphasis was placed on characterizing the microstructures of the single-shot irradiated materials, as a function of the energy density of the laser pulse and the temperature of the substrate. The dependence of the grain size and melt duration as a function of energy density revealed two major crystallization regimes. In the low energy density regime, the average grain size first increases gradually with increases in the laser energy density. In the high energy density regime, on the other hand, a very fine grained microstructure, which is relatively insensitive to variations in the laser energy density, is obtained. In addition, we have discovered that at the transition between these two regimes an extremely small experimental window exists, within which an exceedingly large grain-sized polycrystalline film is obtained. We suggest a liquid phase growth model for this phenomenon, which is based on the regrowth of crystals from the residual solid islands at the oxide interface.

Considerations for Large Area Fabrication of Integrated a-Si and Poly-Si TFTs

1994 ◽  
Vol 336 ◽  
Author(s):  
P. Mei ◽  
G. B. Anderson ◽  
J. B. Boyce ◽  
D. K. Fork ◽  
M. Hack ◽  
...  
Keyword(s):  
Grain Size ◽  
Energy Density ◽  
Laser Energy ◽  
Gate Insulator ◽  
Laser Energy Density ◽  
Laser Crystallization ◽  
Large Area ◽  
Low Leakage ◽  
Threshold Voltages ◽  
Excellent Method

ABSTRACTThe combination of a-Si low leakage pixel TFTs with poly-Si TFTs in peripheral circuits provides an excellent method for reducing the number of external connections to large-area imaging arrays and displays. To integrate the fabrication of the peripheral poly-Si TFTs with the a-Si pixel TFTs, we have developed a three-step laser process which enables selective crystallization of PECVD a-Si:H. X-ray diffraction and transmission electron microscopy show that the polycrystalline grains formed with this three-step process are similar to those crystallized by a conventional one step laser crystallization of unhydrogenated amorphous silicon. The grain size increases with increasing laser energy density up to a peak value of a few Microns. The grain size decreases with further increases in laser energy density. The transistor field effect mobility is correlated with the grain size, increasing gradually with laser energy density until reaching its maximum value. Thereafter, the transistors suffer from leakage through the gate insulators. A dual dielectric gate insulator has been developed for these bottom-gate thin film transistors to provide the correct threshold voltages for both a-Si and poly-Si TFTs.

Effect of Temperature on the Evolved Microstructure During Laser Beam Forming of Sheet Steels

2017 ◽  
Author(s):  
Stephen Akinlabi ◽  
Madindwa Mashinini ◽  
Esther Akinlabi
Keyword(s):  
High Temperature ◽  
Energy Density ◽  
Laser Beam ◽  
Laser Energy ◽  
High Energy ◽  
Phase Changes ◽  
High Energy Density ◽  
Effect Of Temperature ◽  
Beam Forming ◽  
Heating And Cooling

Laser Beam Forming (LBF) being a novel technique and non-contact manufacturing process, employs laser beam as the tool of shaping and bending metal sheets into different shapes and curvatures for various applications. LBF is a high-temperature process, where rapid heating and cooling occurs causing microstructural changes like dynamic recrystallization and phase changes. The study becomes necessary to ensure that the structural integrity of the processed material is not compromised. Hence, the investigation focuses on the effect of temperature on the developed microstructure during the LBF process. The design of experiment was considered, using three levels and five factors. The experimentally measured curvatures were validated with the predicted measured curvatures, which were found to be in agreement. The result shows that the developed ferrite and pearlite grains were due to the heating and cooling. Furthermore, the average grain sizes at a low energy density of about 355°C and high energy density of about 747°C were found to be about 10 μm and 6 μm respectively. It is implied that the high temperature from the high laser energy aided the deformation of the grains significantly. However, such high temperature must be closely monitored so to avoid metallurgical notches in the processed component.

Excimer Laser Crystallized Amorphous Silicon Films: Effects of Shot Density and Substrate Temperature

1991 ◽  
Vol 219 ◽  
Author(s):  
R. I. Johnson ◽  
G. B. Anderson ◽  
S. E. Ready ◽  
J. B. Boyce
Keyword(s):  
Energy Density ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Laser Energy ◽  
Silicon Films ◽  
Laser Energy Density ◽  
Laser Crystallization ◽  
Average Grain Size ◽  
Substrate Temperatures

ABSTRACTLaser crystallization of a-Si thin films has been shown to produce materials with enhanced electrical properties and devices that are faster and capable of carrying higher currents. The quality of these polycrystalline films depends on a number of parameters such as laser energy density, shot density, substrate temperature, and the quality of the starting material. We find that the average grain size and transport properties of laser crystallized amorphous silicon films increase substantially with laser energy density, increase only slightly with laser shot density, and are unaffected by substrate temperatures of up to 400°C. The best films are those processed in vacuum but films of fair quality can also be obtained in air and nitrogen atmospheres.

Magnetic reconnection in the high-energy density regime

2017 ◽  
Vol 59 (6) ◽  
pp. 064002 ◽  
Author(s):  
B Qiao ◽  
Z Xu ◽  
W P Yao ◽  
H X Chang ◽  
X T He
Keyword(s):  
Energy Density ◽  
Magnetic Reconnection ◽  
High Energy ◽  
High Energy Density ◽  
Density Regime

Characterization of magnetic reconnection in the high-energy-density regime

2016 ◽  
Vol 93 (3) ◽  
Author(s):  
Z. Xu ◽  
B. Qiao ◽  
H. X. Chang ◽  
W. P. Yao ◽  
S. Z. Wu ◽  
...  
Keyword(s):  
Energy Density ◽  
Magnetic Reconnection ◽  
High Energy ◽  
High Energy Density ◽  
Density Regime

scholarly journals Effect of Laser Energy Density on the Microstructure andTexture Evolution of Hastelloy-X Alloy Fabricated by Laser Powder Bed Fusion

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4305
Author(s):  
Shuzhe Zhang ◽  
Yunpei Lei ◽  
Zhen Chen ◽  
Pei Wei ◽  
Wenjie Liu ◽  
...  
Keyword(s):  
Grain Size ◽  
Energy Density ◽  
Electron Backscatter Diffraction ◽  
Laser Energy ◽  
Primary Dendrite ◽  
Powder Bed Fusion ◽  
Laser Powder Bed Fusion ◽  
Hastelloy X ◽  
Powder Bed ◽  
Average Grain Size

It is of great importance to study the microstructure and textural evolution of laser powder bed fusion (LPBF) formed Hastelloy-X alloys, in order to establish a close relationship between the process, microstructure, and properties through the regulation of the Hastelloy-X formation process parameters. In this paper, components of a Hastelloy-X alloy were formed with different laser energy densities (also known as the volume energy density VED). The densification mechanism of Hastelloy-X was studied, and the causes of defects, such as pores and cracks, were analyzed. The influence of different energy densities on grain size, texture, and orientation was investigated using an electron backscatter diffraction technique. The results show that the average grain size, primary dendrite arm spacing, and number of low angle grain boundaries increased with the increase of energy density. At the same time, the VED can strengthen the texture. The textural intensity increases with the increase of energy density. The best mechanical properties were obtained at the VED of 96 J·mm−3.

Considerations for Large Area Fabrication Of Integrated a-Si and Poly-Si TFTs

1994 ◽  
Vol 345 ◽  
Author(s):  
P. Mei ◽  
G. B. Anderson ◽  
J. B. Boyce ◽  
D. K. Fork ◽  
M. Hack ◽  
...  
Keyword(s):  
Grain Size ◽  
Energy Density ◽  
Laser Energy ◽  
Gate Insulator ◽  
Laser Energy Density ◽  
Laser Crystallization ◽  
Large Area ◽  
Low Leakage ◽  
Threshold Voltages ◽  
Excellent Method

AbstractThe combination of a-Si low leakage pixel TFTs with poly-Si TFTs in peripheral circuits provides an excellent method for reducing the number of external connections to large-area imaging arrays and displays. To integrate the fabrication of the peripheral poly-Si TFTs with the a-Si pixel TFTs, we have developed a threestep laser process which enables selective crystallization of PECVD a-Si:H. X-ray diffraction and transmission electron microscopy show that the polycrystalline grains formed with this three-step process are similar to those crystallized by a conventional one step laser crystallization of unhydrogenated amorphous silicon. The grain size increases with increasing laser energy density up to a peak value of a few microns. The grain size decreases with further increases in laser energy density. The transistor field effect mobility is correlated with the grain size, increasing gradually with laser energy density until reaching its maximum value. Thereafter, the transistors suffer from leakage through the gate insulators. A dual dielectric gate insulator has been developed for these bottom-gate thin film transistors to provide the correct threshold voltages for both a-Si and poly-Si TFTs.

scholarly journals Effect of Layer-Wise Varying Parameters on the Microstructure and Soundness of Selective Laser Melted INCONEL 718 Alloy

Materials ◽  
2019 ◽  
Vol 12 (13) ◽  
pp. 2165 ◽  
Author(s):  
Xiang Wang ◽  
Jinwu Kang ◽  
Tianjiao Wang ◽  
Pengyue Wu ◽  
Tao Feng ◽  
...  
Keyword(s):  
Energy Density ◽  
Inconel 718 ◽  
Laser Energy ◽  
Scanning Speed ◽  
High Energy ◽  
High Energy Density ◽  
Inconel 718 Alloy ◽  
Melt Pool ◽  
Columnar Grains ◽  
Melt Pool Size

Selective laser melting (SLM) is a promising powder bed fusion additive manufacturing technique for metal part fabrication. In this paper, varying scanning speed in the range of 500 mm/s to 1900 mm/s, and laser power in the range of 100 W to 200 W, were realized from layer to layer in a cycle of 56 layers in a single cuboid Inconel 718 alloy specimen through SLM. Layer-wise variation of microstructure and porosity were acquired, showing the layer-wise controlling capability of microstructural soundness. The melt pool size and soundness are closely linked with the energy input. High energy density led to sound regions with larger, orderly stacked melt pools and columnar grains, while low energy density resulted in porous regions with smaller, mismatched melt pools, un-melted powder, and equiaxed grains with finer dendrites. With the increase of laser energy density, the specimen shifts from porous region to sound region within several layers.

Low Temperature Laser-Doping Process Using PSG and BSG Films for Poly-Si TFTs

2000 ◽  
Vol 621 ◽  
Author(s):  
Cheon-Hong Kim ◽  
Sang-Hoon Jung ◽  
Jae-Hong Jeon ◽  
Min-Koo Han
Keyword(s):  
Energy Density ◽  
Low Temperature ◽  
Sheet Resistance ◽  
Laser Energy ◽  
Surface Concentration ◽  
Laser Pulses ◽  
Laser Energy Density ◽  
Silicon Thin Film ◽  
Laser Doping ◽  
Si Films

ABSTRACTA simple low-temperature excimer-laser doping process employing phosphosilicate glass (PSG) and borosilicate glass (BSG) films as dopant sources is proposed in order to form source and drain regions for polycrystalline silicon thin film transistors (poly-Si TFTs). We have successfully controlled sheet resistance and dopant depth profile of doped poly-Si films by varying PH3/SiH4 flow ratio, laser energy density and the number of laser pulses. The penetration depth and the surface concentration of dopants were increased with increasing laser energy density and the number of laser pulses. The minimum sheet resistance of 450ω/ for phosphorus (P) doping and 1100ω/ for boron (B) doping were successfully obtained. Our experimental results show that the proposed laser-doping process is suitable for source/drain formation of poly-Si TFTs.

Self-similar solutions for high-energy density radiative transfer with separate ion and electron temperatures

2021 ◽  
Vol 477 (2249) ◽  
Author(s):  
William Bennett ◽  
Ryan G. McClarren
Keyword(s):  
Energy Density ◽  
Coupling Coefficient ◽  
External Source ◽  
High Energy ◽  
High Energy Density ◽  
Equilibrium Plasma ◽  
Self Similar ◽  
Similar Solutions ◽  
High Energy Density Plasmas ◽  
Density Regime

We consider a non-equilibrium plasma radiatively heated by an external source in the high-energy density regime. It is shown that self-similar solutions resembling the classic Marshak wave exist for the ion and electron temperatures, if the electron–ion coupling coefficient scales inversely proportional to either the time from when the heating begins or to the square of the distance from the surface of the plasma. We discuss how such a coupling coefficient may arise, and demonstrate that these solutions are also useful for verifying simulation codes that treat radiation–electron–ion coupling in high-energy density plasmas.

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