Low Temperature Fabrication of Poly-Si TFTs using in-situ Chemically Cleaning Method

1992 ◽  
Vol 283 ◽  
Author(s):  
Naoki Kono ◽  
Tatsuro Nagahara ◽  
Kenji Fujimoto ◽  
Yusaku Kashiwagi ◽  
Hisashi Kakinoki
Keyword(s):  
Low Temperature ◽  
Film Thickness ◽  
High Performance ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Condition ◽  
Plasma Chemical Vapor Deposition ◽  
Glass Substrates ◽  
Novel Method

ABSTRACTThin film transistors were fabricated using polycrystalline silicon (poly-Si) film which were directly deposited on Corning 7059 glass substrates by plasma chemical vapor deposition method at very low temperature of 450°C. No annealing procedure was carried out in the fabrication process. The dependences of the crystallinity and the electrical properties on the poly-Si film thickness were investigated for three kinds of films deposited under different conditions. These dependences on the film thickness were found to be strongly influenced by the deposition condition, especially the reaction gas pressure. By choosing optimum poly-Si deposition condition carefully, high performance TFTs have been fabricated by this novel method.

Characterization of In Situ P-Type and N-Type Doped Si and GeXSi1−X Films Grown by Low Temperature Remote Plasma Chemical Vapor Deposition

1992 ◽  
Vol 268 ◽  
Author(s):  
S. Thomas ◽  
J. Irby ◽  
D. Kinosky ◽  
R. Qian ◽  
I. Iqbal ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Future Generation ◽  
Doping Profile ◽  
Remote Plasma ◽  
Plasma Chemical Vapor Deposition ◽  
P Type

ABSTRACTLow temperature Si and Si1−xGex epitaxy is one of the major thrusts in the trend towards low temperature Si processing for future generation ULSI circuits and novel Si-based devices. A remote plasma-enhanced chemical vapor deposition (RPCVD) technique has been developed to achieve Si homoepitaxy and Si1−xGex heteroepitaxy at low temperatures (≤450'C). P-type films have been grown by introducing 90 ppm or 5000 ppm B2H6/He into the system during the growth process to achieve in situ electrically active boron doping. A mesa diode structure with minimal thermal budget in the fabrication process has been employed to evaluate the properties of the boron-doped Si and Si1−xGex films grown at 450°C by RPCVD. Leakage current densities are reduced for diodes grown at 14–18 W (40–50 Å/min. growth rates) compared to similar devices grown at 6.6 W (5 Å/min.). N-type films have been grown by the introduction of 50 ppm PH3/He. Secondary ion mass spectroscopy (SIMS) has been employed to analyze the boron and phosphorus incorporation efficiencies and doping profiles under different conditions. Boron and phosphorus doping profile transitions as sharp as 50–100 Å/decade have been achieved. Transmission electron microscopy (TEM) has been used to investigate the microstructure of the B-doped films.

scholarly journals The changing of silicon suboxide film thickness as a result of high temperature annealing

2019 ◽  
Vol 196 ◽  
pp. 00053
Author(s):  
Alexandr Zamchiy ◽  
Evgeniy Baranov
Keyword(s):  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
Flow Rates ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Suboxide ◽  
Deposited Films ◽  
Electron Beam Plasma

The a-SiOx:H thin films were deposited by the gas-jet electron beam plasma chemical vapor deposition method with different stoichiometry (x=0.15-1.0) for different SiH4 flow rates. The concentration of hydrogen in the films increases with the growth rate in ranges from 1.5 to 4.8 at.%. Further annealing leads to the effusion of hydrogen from the structure of the material and the compression of the structure, which leads to a reduction in the thickness for all films. X-ray diffraction measurements showed that the as-deposited films crystallized to form nc-Si about 4-8 nm in size after annealing at 1000°C.

Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively-Coupled Plasma Chemical Vapor Deposition

1999 ◽  
Vol 573 ◽  
Author(s):  
J. W. Lee ◽  
K. D. Mackenzie ◽  
D. Johnson ◽  
S. J. Pearton ◽  
F. Ren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Silicon Dioxide Films

ABSTRACTHigh-density plasma technology is becoming increasingly attractive for the deposition of dielectric films such as silicon nitride and silicon dioxide. In particular, inductively-coupled plasma chemical vapor deposition (ICPCVD) offers a great advantage for low temperature processing over plasma-enhanced chemical vapor deposition (PECVD) for a range of devices including compound semiconductors. In this paper, the development of low temperature (< 200°C) silicon nitride and silicon dioxide films utilizing ICP technology will be discussed. The material properties of these films have been investigated as a function of ICP source power, rf chuck power, chamber pressure, gas chemistry, and temperature. The ICPCVD films will be compared to PECVD films in terms of wet etch rate, stress, and other film characteristics. Two different gas chemistries, SiH4/N2/Ar and SiH4/NH3/He, were explored for the deposition of ICPCVD silicon nitride. The ICPCVD silicon dioxide films were prepared from SiH4/O2/Ar. The wet etch rates of both silicon nitride and silicon dioxide films are significantly lower than films prepared by conventional PECVD. This implies that ICPCVD films prepared at these low temperatures are of higher quality. The advanced ICPCVD technology can also be used for efficient void-free filling of high aspect ratio (3:1) sub-micron trenches.

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