The Micro-Structure and Electron Conduction Mechanism of Hydrogenated Nano-Crystalline Silicon Films

1992 ◽  
Vol 283 ◽  
Author(s):  
Yuliang He ◽  
Yiming Chu ◽  
Hongyi Lin ◽  
Guoguang Qin
Keyword(s):  
Conduction Mechanism ◽  
Crystalline Silicon ◽  
Fiber Texture ◽  
Silicon Films ◽  
Micro Structure ◽  
Electron Conduction ◽  
Nano Crystalline ◽  
Texture Structure ◽  
Fractal Dimention ◽  
Nano Size

ABSTRACTThe hydrogenated nano-crystalline silicon (nc-Si:H) films have been deposited with PECVD method.1–2 The micro-structure of these films has been studied by TEM and HREM. The PECVD nc-Si:H films show fiber texture structure which is exceptional compared with the nano-size materials made by the method of compressing granules method. The fractal dimention of this texture structure has been calculated with a Fourier filtered image. The relationshisps between conductivity and temperature and micro-structure has also been studied and the mechanism of electron conduction is discussed.

Microstructure and Electron Conduction Mechanism of Hydrogenated Nano-crystalline Silicon Films

1993 ◽  
Vol 10 (9) ◽  
pp. 539-542 ◽  
Author(s):  
Yuliang He (Y L He) ◽  
Yiming Chu (Y M Chu) ◽  
Hongyi Lin (H Y Lin) ◽  
Shusheng Jiang (S S Jiang)
Keyword(s):  
Conduction Mechanism ◽  
Crystalline Silicon ◽  
Silicon Films ◽  
Electron Conduction ◽  
Nano Crystalline

Performances of Nano/Amorphous Silicon Films Produced by Hot Wire Plasma Assisted Technique

1998 ◽  
Vol 507 ◽  
Author(s):  
I. Ferreira ◽  
H. Águas ◽  
L. Mendes ◽  
F. Fernandes ◽  
E. Fortunato ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Transport Properties ◽  
Oxygen Content ◽  
Hydrogen Content ◽  
Crystalline Silicon ◽  
Silicon Films ◽  
Hot Wire ◽  
Hydrogen Dilution ◽  
Nano Crystalline ◽  
Doped Silicon

ABSTRACTThis work reports on the performances of undoped and n doped amorphous/nano-crystalline silicon films grown by hot wire plasma assisted technique. The film's structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), the composition (oxygen and hydrogen content) and the transport properties are highly dependent on the filament temperature and on the hydrogen dilution. The undoped films grown under low r.f. power (≍ 4 mWcm−2) and with filament temperatures around 1850 °K have dark conductivities below 10−1Scm−1, optical gaps of about 1.5 eV and photo-sensitivities above 105, (under AM3.5), with almost no traces of oxygen content. N- doped silicon films were also fabricated under the same conditions which attained conductivities of about 10−2Scm−1.

Microstructures and characteristics of nano-size crystalline silicon films

1992 ◽  
Vol 4 (40) ◽  
pp. L509-L512 ◽  
Author(s):  
L C Wang ◽  
D Feng ◽  
Q Li ◽  
Y L He ◽  
Y M Chu
Keyword(s):  
Crystalline Silicon ◽  
Silicon Films ◽  
Nano Size

scholarly journals The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities

Nanomaterials ◽  
2016 ◽  
Vol 6 (12) ◽  
pp. 233 ◽  
Author(s):  
Dan Shan ◽  
Mingqing Qian ◽  
Yang Ji ◽  
Xiaofan Jiang ◽  
Jun Xu ◽  
...  
Keyword(s):  
Electronic Transport ◽  
Crystalline Silicon ◽  
Silicon Films ◽  
Nano Crystalline ◽  
B Doping ◽  
Very High

Interfacial deep levels in nano-crystalline silicon films

1994 ◽  
Author(s):  
Yayi Wei ◽  
Guozhen Zheng ◽  
Yuliang L. He
Keyword(s):  
Crystalline Silicon ◽  
Deep Levels ◽  
Silicon Films ◽  
Nano Crystalline

Luminescent Properties of Nano-crystalline Silicon Films Embedded in SiO 2

1999 ◽  
Vol 16 (9) ◽  
pp. 670-671 ◽  
Author(s):  
Xuan-ying Lin ◽  
Kui-xun Lin ◽  
Ruo-he Yao ◽  
Wang-zhou Shi ◽  
Mei-ya Li ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Luminescent Properties ◽  
Silicon Films ◽  
Nano Crystalline
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