Nonradiative recombination processes in nickel- and iron-doped ZnS and ZnSe studied by photoinduced electron-spin resonance

1995 ◽  
Vol 52 (16) ◽  
pp. 11879-11883 ◽  
Author(s):  
M. Surma ◽  
A. J. Zakrzewski ◽  
M. Godlewski
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Nonradiative Recombination ◽  
Spin Resonance ◽  
Recombination Processes ◽  
Iron Doped

Electron Spin Resonance Studies of Amorphous Silicon

1980 ◽  
Vol 3 ◽  
Author(s):  
David K. Biegelsen
Keyword(s):  
Electron Spin Resonance ◽  
Amorphous Silicon ◽  
Electron Spin ◽  
Amorphous Semiconductor ◽  
Experimental Techniques ◽  
Equilibrium Behavior ◽  
Spin Resonance ◽  
Recombination Processes ◽  
Simple Picture ◽  
Non Equilibrium

ABSTRACTElectron spin resonance and related spin dependent measurements have been used to make key contributions to the understanding of amorphous silicon, specifically as probes of the dominant states in the gap, recombination processes and doping. In this paper we give a cursory description of the techniques as they apply to this problem. We then review what has been learned in a-Si:H usually from coupled results of spin resonance and other complementary experimental techniques. The results lead us to a surprisingly simple picture of the equilibrium and non-equilibrium behavior of defects and carriers in this prototypical amorphous semiconductor.

Electron Spin Resonance of Iron‐Doped KTaO3

1968 ◽  
Vol 39 (10) ◽  
pp. 4855-4856 ◽  
Author(s):  
Gunter Wessel ◽  
Howard Goldick
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Spin Resonance ◽  
Iron Doped

Electron Spin Resonance Investigations of Rapid Thermal Oxidized Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
H. Linke ◽  
P. Omling ◽  
B. K. Meyer ◽  
V. Petrova-Koch ◽  
T. Muschik ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Porous Silicon ◽  
Electron Spin ◽  
Nonradiative Recombination ◽  
Minimum Density ◽  
Spin Resonance ◽  
Different Types ◽  
Oxidized Porous Silicon ◽  
Pl Intensity ◽  
Defect Densities

ABSTRACTWe studied the defect properties present in rapid thermal oxidized porous silicon (RTOPS) by Electron Spin Resonance (ESR). Two different types of defects are distinguished, one similar to the ones observed in damaged c-Si, and in a-Si. The second one is probably related to the Pbo center at the Si/SiO2 interface. The minimum density of 1016 cm-3 is observed for the as etched and for the 900°C oxidized samples, but reaches a maximum of 8×1018 cm-3for the 600°C samples. The PL intensity anticorrelates with the defect densities, which shows that nonradiative recombination via defects is a very powerful channel in quenching the PL efficiency.

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