The Reactivity of HCI and Methyltrichlorosilane with Silicon Carbide Surfaces

1992 ◽  
Vol 282 ◽  
Author(s):  
Mark D. Allendorf ◽  
Duane A. Outka
Keyword(s):  
Silicon Carbide ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Temperature Programmed Desorption ◽  
Stable Surface ◽  
Temperature Programmed

ABSTRACTThis work explores the reactivity of HCI and methyltrichlorosilane (MTS) with polycrystalline β-silicon carbide (SiC) surfaces using temperature-programmed desorption (TPD) and Auger electron spectroscopy. HCl is a corrosive gas that inhibits SiC deposition. The results show that HCl is adsorbed by SiC, forming a stable surface chloride that could inhibit SiC deposition. TPD shows that chlorine desorbs as HCI or SiCl4, confirming that HCl can etch SiC surfaces. Desorption is rate-limited by the breaking of Si-Cl bonds. MTS is also adsorbed by SiC; its desorption is similar to that of HCI.

Surface Chemistry of Dimethylaluminum Hydride and Trimethylaluminum on Aluminum

1989 ◽  
Vol 158 ◽  
Author(s):  
Daniel R. Strongin ◽  
Paul B. Comita
Keyword(s):  
Surface Chemistry ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Temperature Programmed Desorption ◽  
Aluminum Surface ◽  
Desorption Peak ◽  
Carbonaceous Species ◽  
Temperature Programmed ◽  
Dimethylaluminum Hydride

ABSTRACTThe surface chemistry of dimethylaluminum hydride (DMAH) and trimethylaluminum (TMA) on aluminum has been investigated with temperature programmed desorption (TPD), and Auger electron spectroscopy (AES). The TPD spectra of TMA shows a single desorption peak with a peak maximum which shifts from 190 to 200 K for surface coverages of 0.5 and 2.0 monolayers (ML) respectively. DMAH desorbs from an aluminum surface between 198 and 236 K at surface coverages ranging from 0.1 to 4.0 ML. A second DMAH desorption peak is observed at about 200 K (2.0 ML) when the aluminum surface is contaminated with carbonaceous species, resulting from the decomposition of DMAH. Both DMAH and TMA yield methane as a reaction product on the aluminum surface. The surface reactions of DMAH on aluminum also yield TMA as a reaction product.

Thermal Decomposition Study of Dimethylaminoethanol on Si(100) by TPD and AES

2003 ◽  
Vol 10 (04) ◽  
pp. 685-689
Author(s):  
Sungwon Lim ◽  
Kijung Yong
Keyword(s):  
Thermal Decomposition ◽  
Carbon Monoxide ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hydrogen Molecule ◽  
Temperature Programmed Desorption ◽  
Carbon And Nitrogen ◽  
Complete Decomposition ◽  
Temperature Programmed

Thermal decomposition and desorption of dimethylaminoethanol [dmaeH, ( CH 3)2 NC 2 H 4 OH ] on Si(100) was studied using temperature-programmed desorption (TPD) and Auger electron spectroscopy (AES). During heating of the sample up to 1100 K, methyliminoacetaldehyde, ethylene, carbon monoxide and hydrogen molecule were desorbed as the main desorption products from dmaeH on Si(100). After TPD experiments, carbon and nitrogen were detected by AES, indicating that complete decomposition of dmaeH also proceeded on Si(100).

Auger electron spectroscopy study of reactive ion etched silicon carbide

2006 ◽  
Vol 83 (1) ◽  
pp. 12-16 ◽  
Author(s):  
J.H. Xia ◽  
Rusli ◽  
S.F. Choy ◽  
R. Gopalakrishan ◽  
C.C. Tin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Spectroscopy Study ◽  
Etched Silicon

Adsorption and Decomposition of Trimethylarsenic on GaAs(100)

1988 ◽  
Vol 131 ◽  
Author(s):  
J. R. Creighton
Keyword(s):  
Activation Energy ◽  
Electron Irradiation ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Temperature Programmed Desorption ◽  
Methyl Radicals ◽  
Arsenic Compounds ◽  
Group V ◽  
Desorption Activation Energy ◽  
Temperature Programmed

ABSTRACTAlkylated arsenic compounds have shown some promise as alternatives to arsine as the group-V source gas for GaAs MOCVD. However, little is known about the fundamental chemical interactions of these compounds with the GaAs surface. We have investigated the adsorption and reactivity of trimethylarsenic (TMAs) on GaAs(100) using temperature programmed desorption (TPD), Auger electron spectroscopy, and LEED. For the exposures and temperatures studied, TMAs did not pyrolytically decompose on the GaAs(100). TPD results indicate that TMAs chemisorbs, apparently non-dissociatively, and desorbs ≅330 K. Multilayers of TMAs desorb ≅140–160 K. Exposure of adsorbed TMAs to 70 eV electrons results in irreversible decomposition of the molecule. After electron irradiation, TPD shows that methyl radicals desorb at 660 K, which corresponds to a desorption activation energy of ≅40 kcal/mol. At higher temperatures, As2, H2, C2H2, and a smaller amount of methyl radicals desorb, and a small coverage of carbon remains on the surface.

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