Microstructural Evolution During Epitaxial Growth of Chemically Derived Ba2YCu307-x. Thin Films

1992 ◽  
Vol 280 ◽  
Author(s):  
Paul C. Mclntyre ◽  
Michael J. Cima
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Rapid Heating ◽  
Substrate Surface ◽  
Ex Situ ◽  
Precursor Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Phase Development ◽  
Crystalline Matrix

ABSTRACTMicrostructure development in thin films of Ba2YCu3O7-x (BYC) synthesized on (001) LaA1O3 using an ex situ process was characterized by TEM and STEM examination of specimens quenched from different points in the growth heat treatment. The microchemistry of the growing oxide films was characterized by EDS in STEM. Phase development was also studied by X-ray diffraction. Several investigators have suggested that growth of BYC during ex situ processing occurs by nucleation and growth of BYC into an amorphous precursor film. Our observations indicate that this process involves growth into a substantially crystalline matrix. X-ray diffraction was used to identify three phases, BaF2, BaCuO2, and CuO, which are present prior to BYC nucleation. Nucleation of both c-axis normal and a-axis normal BYC occurred at approximately 760°C during rapid heating to 830°C in the growth heat treatment. Rapid growth of the c-axis normal material parallel to the substrate surface caused this orientation to become dominant in the fully converted films. Chemical microanalysis of the quenched films suggests that the BYC grows into an overlying layer that, after quenching, is composed of relatively large (25–100 nm diameter) yttrium- and copper-rich particles in a nanocrystalline barium-rich matrix.

scholarly journals Elaboration of nitride thin films by reactive sputtering

2006 ◽  
Vol 59 (2) ◽  
pp. 225-232 ◽  
Author(s):  
Pierre Yves Jouan ◽  
Arnaud Tricoteaux ◽  
Nicolas Horny
Keyword(s):  
Thin Films ◽  
Compressive Stress ◽  
Bias Voltage ◽  
Substrate Surface ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
A Value ◽  
Dc Reactive Magnetron Sputtering ◽  
Nitrogen Contents

The aim of this paper is first a better understanding of DC reactive magnetron sputtering and its implications, such as the hysteresis effect and the process instability. In a second part, this article is devoted to an example of specific application: Aluminium Nitride. AlN thin films have been deposited by reactive triode sputtering. We have studied the effect of the nitrogen contents in the discharge and the RF bias voltage on the growth of AlN films on Si(100) deposited by triode sputtering. Stoichiometry and crystal orientation of AlN films have been characterized by means of Fourier-transform infrared spectroscopy, X-ray diffraction and secondary electron microscopy. Dense and transparent AlN layers were obtained at high deposition rates. These films have a (002) orientation whatever the nitrogen content in the discharge, but the best crystallised ones are obtained at low value (10%). A linear relationship was observed between the AlN lattice parameter "c" (perpendicular to the substrate surface) and the in-plane compressive stress. Applying an RF bias to the substrate leads to a (100) texture, and films become amorphous. Moreover, the film's compressive stress increases up to a value of 8GPa before decreasing slowly as the bias voltage increases.

In situ X-ray diffraction study of crystallization process of GeSbTe thin films during heat treatment

2005 ◽  
Vol 244 (1-4) ◽  
pp. 281-284 ◽  
Author(s):  
Naohiko Kato ◽  
Ichiro Konomi ◽  
Yoshiki Seno ◽  
Tomoyoshi Motohiro
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Diffraction Study ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
X Ray

Influence of deposition parameters on the residual stresses of WC-Wo sputtered thin films

MRS Advances ◽  
2020 ◽  
Vol 5 (23-24) ◽  
pp. 1215-1223
Author(s):  
R.R. Phiri ◽  
O.P. Oladijo ◽  
E.T. Akinlabi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Residual Stresses ◽  
Substrate Surface ◽  
Tribological Performance ◽  
X Ray Diffraction ◽  
X Ray ◽  
Compressive Stresses ◽  
Deposition Parameters ◽  
Cobalt Thin Films

AbstractControl and manipulation of residual stresses in thin films is a key for attaining coatings with high mechanical and tribological performance. It is therefore imperative to have reliable residual stress measurements methods to further understand the dynamics involved. The sin2ψ method of X-ray diffraction was used to investigate the residual stresses on the tungsten carbide cobalt thin films deposited on a mild steel surface to understand the how the deposition parameters influence the generation of residual stresses within the substrate surface. X-ray spectra of the surface revealed an amorphous phase of the thin film therefore the stress measured was of the substrate surface and the effects of sputtering parameters on residual stress were analysed. Compressive stresses were identified within all samples studied. The results reveal that as the sputtering parameters are varied, the residual stresses also change. Optimum deposition parameters in terms of residual stresses were suggested.

REALIZATION AND CHARACTERIZATION OF e-BEAM COMPLETELY EVAPORATED BSCCO THIN FILMS

1991 ◽  
Vol 05 (18) ◽  
pp. 1203-1211 ◽  
Author(s):  
C. ATTANASIO ◽  
L. MARITATO ◽  
A. NIGRO ◽  
S. PRISHEPA ◽  
R. SCAFURO
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Single Crystal ◽  
Critical Current ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Reliable Technique ◽  
X Ray ◽  
Eds Analysis

BSCCO thin films with T c (R = 0) higher than 80 K have been routinely prepared using a simple and reliable technique in which we completely electron beam evaporated weighted amounts of bulk pellets. The films were grown on MgO single crystal (100) substrates and showed, after an ex-situ annealing at high temperatures (840–880° C) for several hours, a strong preferential orientation with the c-axis perpendicular to the plane of the substrate. The films were characterized by Θ − 2Θ X-ray diffraction and EDS analysis and by paraconductivity and critical current measurements.

STUDY OF SUPERCONDUCTING Y-BA-CU-O THIN FILMS WITH ZERO RESISTANCE TEMPERATURE AT 77K

1987 ◽  
Vol 01 (02) ◽  
pp. 571-574
Author(s):  
Jia-qi Zheng ◽  
Guo-guang Zheng ◽  
Dong-qi Li ◽  
Wei Wang ◽  
Jin-min Xue ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Electron Beam ◽  
High Vacuum ◽  
Vacuum System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zero Resistance

Y-Ba-Cu-O thin films are deposited onto severval kinds of substrates by electron beam evaporating in a high vacuum system. After the heat treatment at 850–890°c for 1hr the Y-Ba-Cu-O films on the BaF2 substrates show superconducting behaviors with the midpoint Tc around 87K and zero resistance temperature at 77K. The composition and stucture analysis of these films have been studied by AES, XRFS and x-ray diffraction.

Surface Structural Characterization and Mechanical Testing by Nanoindentation Measurements of Hybrid Polymer/clay Nanostructured Multilayer Films

2002 ◽  
Vol 17 (7) ◽  
pp. 1622-1633 ◽  
Author(s):  
Xiaowu Fan ◽  
Mi-Kyoung Park ◽  
Chuanjun Xia ◽  
Rigoberto Advincula
Keyword(s):  
Thin Films ◽  
Quartz Crystal ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Diallyldimethylammonium Chloride

Nanostructured montmorillonite/poly(diallyldimethylammonium chloride) multilayer thin films were fabricated up to 100 layers thick by stepwise alternating polyelectrolyte and clay deposition from solution. The structure and morphology of the films were characterized by x-ray diffraction, ellipsometry, atomic force microscopy, and quartz crystal microbalance ex situ and in situ measurements. The mechanical properties were tested by nanoindentation. The hardness of the multilayer thin film was 0.46 GPa. The thin film's modulus was correlated to its ordering and anisotropic structure. Both hardness and modulus of this composite film were higher than those of several other types of polymer thin films.

scholarly journals Chlorosubstituted Copper Phthalocyanines: Spectral Study and Structure of Thin Films

Molecules ◽  
2020 ◽  
Vol 25 (7) ◽  
pp. 1620 ◽  
Author(s):  
Alexandr Sukhikh ◽  
Dmitry Bonegardt ◽  
Darya Klyamer ◽  
Pavel Krasnov ◽  
Tamara Basova
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Substrate Surface ◽  
X Ray Diffraction ◽  
Amorphous Films ◽  
X Ray ◽  
Disordered Films ◽  
Copper Phthalocyanines ◽  
First Time ◽  
Ir And Raman

In this work, the tetra-, octa- and hexadecachloro-substituted copper phthalocyanines CuPcClx (where x can equal 4, 8 or 16) were investigated by the methods of vibrational (IR and Raman) spectroscopy and X-ray diffraction. The assignment of the most intense bands, both in IR and Raman spectra, was carried out on the basis of DFT calculations. The structure of a CuPcCl4 single crystal grown by sublimation in vacuum was refined for the first time. The effect of chloro-substitution on the structure of CuPcClx thin films deposited in a vacuum onto a glass substrate at 50 and 200 °C was studied. It was shown that CuPcCl4 formed polycrystalline films with the preferential orientation of the (100) crystallographic plane of crystallites parallel to the substrate surface when deposited on a substrate at 50 °C. Introduction of more Cl-substituents into the phthalocyanine macrocycle leads to the formation of amorphous films on the substrates at 50 °C. At the elevated substrate temperature, the growth of polycrystalline disordered films was observed for all three copper phthalocyanines.

Powder X-Ray Diffraction Characterization of Laser Deposited Ferroelectric Thin Films

1991 ◽  
Vol 35 (A) ◽  
pp. 211-220
Author(s):  
W. Wong-Ng ◽  
T.C. Huang ◽  
L.P. Cook ◽  
P.K. Schenck ◽  
M.D. Vaudin ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Analytical Techniques ◽  
Surface Strain ◽  
Tetragonal Symmetry ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Splitting ◽  
Pzt Films ◽  
Diffraction Patterns

AbstractThin films of BaTiO3 and Pb(Zr53 Ti47)O3 (PZT) have been deposited on Pt and Pt-coated silicon substrates using both Nd-YAG and excimer lasers. The BaTiO3 films were prepared using heated substrates and were crystalline. The PZT films were deposited at room temperature and were amorphous; on annealing, they crystallized and gave rise to well-defined powder x-ray diffraction patterns.To compare and correlate the properties and processing conditions of these thin films, characterizations were performed using a variety of analytical techniques including x-ray diffraction, TEM, SEM/EDX and ferroelectric and dielectric property measurements. The x-ray diffraction technique was used for identifying the various phases formed and also for analyzing the profiles of the diffraction peaks. Both the PZT films annealed below 800°C and the BaTiO3 films typically show polycrystalline x-ray diffraction patterns corresponding to a pseudo-cubic structure (i.e no peak splitting) instead of the tetragonal patterns characteristic of the target materials. It was found that for the BaTiO3 films the pseudosymmetry was due to crystallographic alignment of the longer c-axis In the substrate surface to relieve strain. In the FZT films annealed below 900°C, it is suggested that the residual surface strain and/or small crystallite size of these materials may have precluded the peak splitting; at higher annealing temperatures, the tetragonal symmetry was recovered.

SYNTHESIS AND CHARACTERIZATION OF HG-BASED SUPERCONDUCTING THIN FILMS PRODUCED STARTING FROM LASER-DEPOSITED PRECURSORS

2000 ◽  
Vol 14 (25n27) ◽  
pp. 2731-2736 ◽  
Author(s):  
M. BINDI ◽  
F. FUSO ◽  
N. PUCCINI ◽  
E. ARIMONDO ◽  
A. TAMPIERI ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Deposition ◽  
Precursor Film ◽  
Superconducting Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electron Microscopy Analysis ◽  
Zero Resistance ◽  
Microscopy Analysis

Correctly c-axis oriented HgBa 2 CaCu 2 O 6+δ thin films have been produced on (100) MgO single crystal substrates and characterized. Pulsed laser deposition has been exploited to deposit Hg-free Re-doped precursor which then underwent synthesis in evacuated and sealed quartz tubes. X-ray diffraction pattern of the precursor target shows the expected composition of oxides. Scanning electron microscopy analysis have been performed on the surface of the precursor film. Hg-1212 films have been analyzed by θ-2θ Bragg-Brentano X-ray diffractometry. The patterns show little contributions in composition of Hg-1223 phase. The films exhibit a transition temperature >120 K with zero-resistance at around 115 K.

Electrodeposition of lithium phthalocyanine thin films: Part I. Structure and morphology

1999 ◽  
Vol 14 (5) ◽  
pp. 2162-2172 ◽  
Author(s):  
M. Brinkmann ◽  
S. Graff ◽  
C. Chaumont ◽  
J-J. André
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Indium Tin Oxide ◽  
Film Growth ◽  
Oxidation Potential ◽  
Thin Film Growth ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
X Ray ◽  
Film Synthesis

A new thin film synthesis route based on the electrochemical oxidation of PcLi2 and deposition of lithium phthalocyanine (PcLi) onto indium tin oxide (ITO) substrate is demonstrated. The effects on the thin film morphology of various parameters such as the electrolysis time, the nature of the solvent, and the oxidation potential are investigated. The thin film growth is studied via x-ray diffraction, potential step experiments, and ex situ scanning electron microscopy. Various morphologies of the x-form thin films are observed for different electrolysis times and solvents. Thin films grown in acetonitrile of thickness above 1 μm consist in unidirectionally oriented needle-shaped crystallites.

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