Microstructure - Roughness Interelation in Ru/C and Ru/B4C X-RAY Multilayers

1992 ◽  
Vol 280 ◽  
Author(s):  
Tai D. Nguyen ◽  
Ronald Gronsky ◽  
Jeffrey B. Kortricht
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Diffuse Component ◽  
Interfacial Roughness ◽  
Cross Sectional ◽  
X Ray ◽  
Specular Scattering ◽  
Transmission Electron ◽  
Hrtem Observation

ABSTRACTX-ray specular and non-specular scattering, and high-resolution transmission electron microscopy (HRTEM) were performed to study the evolution of the microstructures and interfacial roughness in Ru/C and RU/B4C multilayers upon annealing. The microstructure of the approximately 1.4 nm thick Ru layers in the as-prepared 3.5 nm period multilayers is predominantly amorphous. The Ru layers in the Ru/B4C multilayer show RuB2nano-crystallites after annealing at 600°C for one hour, while those in the Ru/C multilayer crystallize to form hexagonal Ru crystallites. Cross-sectional HRTEM of the annealed Ru/C multilayer also shows agglomeration of the Ru layers. Non-specular measurements of the Ru/C multilayers indicate an enhanced uncorrelated roughness upon annealing. The diffuse component in the as-prepared and annealed RU/B4C multilayers shows insignificant changes. The increase in interfacial roughness in the Ru/C multilayer results from agglomeration of the Ru after annealing, consistent with HRTEM observation.

A High Resolution Study of G.P. Zones in Aluminum - 4.2 at % Silver

1982 ◽  
Vol 40 ◽  
pp. 722-723 ◽  
Author(s):  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulations ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Resolution Study

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.

scholarly journals High Resolution Transmission Electron Microscopy of Metallic Film/Laser-Irradiated Alumina Couples.

1994 ◽  
Vol 357 ◽  
Author(s):  
A. J. Pedraza ◽  
Siqi Cao ◽  
L. F. Allard ◽  
D. H. Lowndes
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Copper Film ◽  
Interfacial Structure ◽  
Diffuse Interface ◽  
Cross Sectional ◽  
Polycrystalline Alumina ◽  
Near Surface ◽  
Transmission Electron

AbstractA near-surface thin layer is melted when single crystal alumina (sapphire) is pulsed laserirradiated in an Ar-4%H2 atmosphere. γ-alumina grows epitaxially from the (0001) face of axalumina (sapphire) during the rapid solidification of this layer that occurs once the laser pulse is over. Cross sectional high resolution transmission electron microscopy (HRTEM) reveals that the interface between unmelted sapphire and γ-alumina is atomistically flat with steps of one to a few close-packed oxygen layers; however, pronounced lattice distortions exist in the resolidified γ-alumina. HRTEM also is used to study the metal-ceramic interface of a copper film deposited on a laser-irradiated alumina substrate. The observed changes of the interfacial structure relative to that of unexposed substrates are correlated with the strong enhancement of film-substrate bonding promoted by laser irradiation. HRTEM shows that a thin amorphous film is produced after irradiation of 99.6% polycrystalline alumina. Formation of a diffuse interface and atomic rearrangements that can take place in metastable phases contribute to enhance the bonding strength of copper to laser-irradiated alumina.

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

scholarly journals Microstructure and Stability Comparison of Nanometer Period W/C, Wc/C, and Ru/C Multilayer Structures

1990 ◽  
Vol 187 ◽  
Author(s):  
Tai D. Nguyen ◽  
Ronald Gronsky ◽  
Jeffrey B. Kortright
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Layered Structures ◽  
Multilayer Structures ◽  
X Ray ◽  
Transmission Electron

AbstractMultilayer structures of W/C, WC/C, and Ru/C, of various periods were prepared and studied by high-resolution transmission electron microscopy. Comparison of the phases in the layered structures is made for as-prepared and annealed samples. Both as-prepared and annealed WC/C multilayers are predominantly amorphous, while the phases in the W/C depend on the periods. The 2 nm period W/C multilayer remains amorphous after annealing, and the longer periods recrystallize to form W2C. The layered microstructures of W/C and WC/C are stable on annealing at all periods, while the amorphous Ru-rich layers in the 2 nm period Ru/C multilayer agglomerate upon annealing to form elemental hexagonal Ru crystallites. Larger period Ru/C multilayers show stable layered structures, and indicate hexagonal Ru in the Ru-rich layers. X-ray measurements show that the multilayer periods expand on annealing for all metal-carbon multilayers studied.

Effect of Ge-rich Si1−zGez Segregation on the Morphological Stability of NiSi1−uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer

2004 ◽  
Vol 810 ◽  
Author(s):  
H.B. Yao ◽  
D.Z. Chi ◽  
S. Tripathy ◽  
S.Y. Chow ◽  
W.D. Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Grain Boundary ◽  
Surface Morphology ◽  
Morphological Stability ◽  
Triple Junctions ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Segregation Process

ABSTRACTThe germanosilicidation of Ni on strained (001) Si0.8Ge0.2, particularly Ge segregation, grain boundary grooving, and surface morphology, during rapid thermal annealing (RTA) was studied. High-resolution cross-sectional transmission electron microscopy (HRXTEM) suggested that Ge-rich Si1−zGez segregation takes place preferentially at the germanosilicide/Si1−xGex interface, more specifically at the triple junctions between two adjacent NiSi1−uGeu grains and the underlying epi Si1−xGex, and it is accompanied with thermal grooving process. The segregation process accelerates the thermal grooving of NiSi1−uGeu grain boundaries at the interface. The segregation-accelerated grain boundary grooving has significant effect on the surface morphology of NiSi1−uGeu films in Ni-SiGe system.

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