Surface Diffusion: Atomistics and Surface Morphology (Summary of MRS Symposium B Panel Discussion)

1992 ◽  
Vol 280 ◽  
Author(s):  
M. H. Grabow ◽  
P. J. Feibelman ◽  
G. H. Gilmer ◽  
B. H. Cooper ◽  
Y. W. Mo
Keyword(s):  
Surface Morphology ◽  
Scanning Tunneling Microscopy ◽  
Computer Modeling ◽  
Surface Diffusion ◽  
Panel Discussion ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Modeling Techniques

ABSTRACTThis paper gives some of the highlights of a panel discussion on surface diffusion held Monday, November 30, 1992 at the Fall MRS Meeting in Boston, Massachusetts. Four invited speakers discussed computer modeling techniques and scanning tunneling microscopy experiments that have been used to provide new understanding of the atomistic processes that occur at surfaces. We present a summary of each of the invited talks, indicate other presentations on surface diffusion in this proceedings, and provide a transcript of the two discussion sessions.

Scanning-tunneling-microscopy study of the surface diffusion of sulfur on Re(0001)

1993 ◽  
Vol 47 (4) ◽  
pp. 2320-2328 ◽  
Author(s):  
J. C. Dunphy ◽  
P. Sautet ◽  
D. F. Ogletree ◽  
O. Dabbousi ◽  
M. B. Salmeron
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Surface Diffusion ◽  
Microscopy Study ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Scanning Tunneling Microscopy Study

Surface morphology of MBE-grown GaAs(001)−(2 × 4) and GaAs(001)-faceted surfaces investigated by scanning tunneling microscopy

1993 ◽  
Vol 287-288 ◽  
pp. 514-519 ◽  
Author(s):  
V. Bressler-Hill ◽  
R. Maboudian ◽  
M. Wassermeier ◽  
X.-S. Wang ◽  
K. Pond ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Scanning Tunneling Microscopy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Stm Observation of Solid Phase Epitaxy Processes of Ar-Sputtered Si(100) Surfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
Katsuhiro Uesugi ◽  
Masamichi Yoshimura ◽  
Takafumi Yao ◽  
Tomoshige Sato ◽  
Takashi Sueyoshi ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Scanning Tunneling Microscopy ◽  
Double Layer ◽  
Solid Phase ◽  
The Other ◽  
Scanning Tunneling ◽  
Nanometer Scale ◽  
Solid Phase Epitaxy ◽  
Tunneling Microscopy ◽  
Partially Observed

ABSTRACTScanning tunneling microscopy (STM) is used to investigate the surface morphology of Ar+-ion bombarded Si(100) surfaces and to elucidate the very beginning stages of solid phase epitaxy (SPE) processes of the Ar+-ion bombarded Si surfaces. The Ar+-ion bombarded Si surface consists of hillocks of 1–2 nm in diameter and 0.35–0.75 nm in height. The onset of SPE initiates at around 590°C, at which temperature a (2×2) structure surrounded by amorphous regions is partially observed on terraces of the surface. During annealing at 590–620°C, the areas of the c(2×2) and c(4×4) reconstruction surrounded by amorphous regions develops. New defect models for the (2×2) and c(4×4) structures are proposed w here alternating arrangements of the buckled dimers together with missing dimer defects are considered. On the other hand, after thermal annealing of the Ar+-ion bombarded Si at 830°C for 10 sec, terraces of (2×1) and (1×2) orientations arc observed on the surface, and pyramidal structures on a nanometer-scale which consists of double-layer step edges (dimer rows perpendicular to terrace edge) arc observed.

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