Excimer Laser Induced Cryoetching of GaAs and Related Materials

1992 ◽  
Vol 279 ◽  
Author(s):  
Michael B. Freiler ◽  
Ming Chang Shih ◽  
R. Scarmozzino ◽  
R. M. Osgood ◽  
Ie Wei Tao ◽  
...  
Keyword(s):  
Electron Beam ◽  
Excimer Laser ◽  
Electron Beam Lithography ◽  
Low Temperatures ◽  
Structural Damage ◽  
Ridge Waveguide ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Excimer Laser Irradiation ◽  
193 Nm

ABSTRACTWe report highly resolved, damage-free etching of GaAs and related materials. The etching is activated by excimer laser irradiation at 193 nm of samples maintained at low temperatures (∼140 K) in a chlorine atmosphere (∼5 mTorr). Since the etching is chemical in nature, structural damage to the substrate should not be present. Submicrometer resolution has been achieved by the use of electron beam lithography to pattern a Si3N4 contact mask. We have also successfully used our etching in the fabrication of a single-quantum-well, ridge-waveguide semiconductor laser.

Effect of Thermal Annealing on the Photoluminescence Properties of a GaInNAs/GaAs Single Quantum Well

2000 ◽  
Vol 639 ◽  
Author(s):  
Laurent Grenouillet ◽  
Catherine Bru-Chevallier ◽  
Gérard Guillot ◽  
Philippe Gilet ◽  
Philippe Ballet ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Low Temperatures ◽  
Blue Shift ◽  
Emission Peak ◽  
Single Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well ◽  
Peak Energy ◽  
Strong Blue Shift

ABSTRACTWe report on the effect of thermal annealing on the photoluminescence properties of a Ga0.65In0.35N0.02As0.98/GaAs single quantum well. Thermal annealing is shown to decrease the strong nitrogen-induced localization effects observed at low temperatures and to reduce the full width at half maximum of the emission peak. It also induces a strong blue shift of the emission peak energy, which is thought not to arise from an In-Ga interdiffusion alone, as it is much larger than in a nitrogen-free reference single quantum well.

Amorphous Gallium Produced By Pulsed Excimer Laser Irradiation

1985 ◽  
Vol 51 ◽  
Author(s):  
J. Fröhlingsdorf ◽  
B. Stritzker
Keyword(s):  
Transition Temperature ◽  
Energy Density ◽  
Excimer Laser ◽  
Low Temperatures ◽  
Threshold Energy ◽  
Residual Resistivity ◽  
Superconducting Transition ◽  
Β Phase ◽  
Excimer Laser Irradiation ◽  
Vapor Quenching

ABSTRACTPure crystalline Ga films (α-Ga, β-Ga) have been irradiated at low temperatures (≤ 20 K) with an Excimer laser. By measuring the superconducting transition temperature Tc and the residual resistivity ≤o, the resulting Ga phases (α-Ga, β-Ga, a-Ga) can be identified.Both crystalline Ga phases can be transformed into the amorphous phase.The threshold energy density for the β→ a transition depends on the film thickness, whereas the α →. a transition occurs always at about 225 mJ/cm2 This behavior is in agreement with earlier observations that a-Ga can grow on top of the in-phase but not on the β-phase.The results of laser quenching are compared with other non-equilibrium techniques for the production of a-Ga, such as vapor quenching and low temperature ion iradiation.

Two-Photon Absorption Cross Section for Silane Under Pulsed Arf (193 nm) Excimer Laser Irradiation

1987 ◽  
Vol 101 ◽  
Author(s):  
C. Fuchs ◽  
E. Boch ◽  
E. Fogarassy ◽  
B. Aka ◽  
P. Siffert
Keyword(s):  
Excimer Laser ◽  
Cross Section ◽  
Absorption Cross Section ◽  
Incident Light ◽  
Photon Absorption ◽  
Absorption Cross ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Excimer Laser Irradiation ◽  
193 Nm

ABSTRACTWe have determined for the first time, the two-photon absorption cross-section of silane at 193 nm, by measuring directly the fraction of incident light absorbed in the gas phase during the irradiation with a pulsed ArF excimer laser.

Production of Electronically Excited P2 and in from ArF Excimer Laser Irradiation of InP

1986 ◽  
Vol 75 ◽  
Author(s):  
V. M. Donnelly ◽  
V. R. McCrary ◽  
D. Brasen
Keyword(s):  
Excimer Laser ◽  
Laser Frequency ◽  
Laser Exposure ◽  
Resonance Fluorescence ◽  
Thermally Activated ◽  
Ejection Process ◽  
Electronically Excited ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
193 Nm

AbstractWe have investigated the decomposition of single-crystal InP surfaces irradiated by a 193 nm ArF excimer laser. These studies provide insight into mechanisms of thermal decomposition, surface diffusion and epitaxy. Pulsed laser exposure leads to evolution of P2 from the surface which is detected by resonance fluorescence resulting from a fortuitous overlap of the v″ = 0 with the laser frequency. P2-evolution occurs above a threshold fluence of 0.12 J/cm2 and lags the peak laser intensity by ∼20 nsec. These observations are explained by a thermally activated decomposition mechanism, as opposed to any direct, photochemical ejection process. Peak surface temperatures have been calculated and are used to predict P2 yields as a function of fluence and time which are in good agreement with experiments. These findings are also discussed in relation to previous studies of excimer laser stimulated growth of InP.

Laser Irradiation of Ge(100): An Assessment of Surface Order with He Diffraction

1984 ◽  
Vol 35 ◽  
Author(s):  
W. R. Lambert ◽  
P. L. Trevor ◽  
M. T. Schulberg ◽  
M. J. Cardillo ◽  
J. C. Tully
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Low Temperatures ◽  
Thermal Response ◽  
Surface Damage ◽  
Experimental Results ◽  
Excimer Laser Irradiation ◽  
Effects Of Irradiation On ◽  
He Atom

ABSTRACTWe investigate the effects of Nd:YAG and excimer laser irradiation on the Ge(100) surface under UHV conditions over a temperature range 140 < T(K) < 300 using the surface sensitive probe of He atom diffraction. We study the effects of irradiation on surface damage and order using the apparent (2×1) ࢐ c(2×4) transition. We monitor surface contamination in situ. The temporal thermal response is modeled theoretically to aid in assessing the experimental results. The capability to maintain a Ge(100) surface at low temperatures free of contamination and well ordered is demonstrated.

Sign in / Sign up

Export Citation Format

Share Document