CW Laser-Induced Removal of Interconnections in Submicron Devices

1992 ◽  
Vol 279 ◽  
Author(s):  
Geoffroy Auvert
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Conducting Material ◽  
Insulating Material ◽  
Submicron Devices ◽  
Ion Laser ◽  
Microelectronics Technology ◽  
Materials Used ◽  
Argon Ion

ABSTRACTThe interaction of a cw argon-ion laser with the materials used in the microelectronics technology is described as a pyrolytic effect. A chemical reaction is induced between the oxide layer and the hot irradiated silicon or aluminum line. By making a cross section of the irradiated area using a focused ion beam, the formation of an unstable insulating material covering the conducting material is observed.

Application of Argon Ion Beam Cross Section Polishing in Material Microstructure Research

2011 ◽  
Vol 492 ◽  
pp. 419-423 ◽  
Author(s):  
Yong Zhe Wang ◽  
Wei Wu ◽  
Zi Wei Liu ◽  
Yi Zeng ◽  
Min Ju Ding ◽  
...  
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Soft Materials ◽  
Beam Cross Section ◽  
Polished Surface ◽  
Material Microstructure ◽  
Argon Ion ◽  
Scanning Electron

Scanning Electron Microscope (SEM) has been widely used in the observation of surface and cross section of materials. So it is important to prepare the cross section of various specimens. In this study, a novel cross section preparation method using argon ion beam (called argon ion beam cross-section polisher or CP) was introduced. This method can not only overcome the problem of artifacts caused by mechanical polishing on the polished surface, but also enable one to prepare a wider area of specimens than the Focused Ion Beam (FIB) method. The soft materials, composite materials with different hardness, multilayer films and powders were all easily polished with few artifacts using this method.

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

Automated Diagonal Slice and View Solution for 3D Device Structure Analysis

2018 ◽  
Author(s):  
Sang Hoon Lee ◽  
Jeff Blackwood ◽  
Stacey Stone ◽  
Michael Schmidt ◽  
Mark Williamson ◽  
...  
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Image Data ◽  
Planar Surface ◽  
Device Structure ◽  
Cross Sectional ◽  
Device Structures ◽  
The Cross ◽  
Planar Analysis

Abstract The cross-sectional and planar analysis of current generation 3D device structures can be analyzed using a single Focused Ion Beam (FIB) mill. This is achieved using a diagonal milling technique that exposes a multilayer planar surface as well as the cross-section. this provides image data allowing for an efficient method to monitor the fabrication process and find device design errors. This process saves tremendous sample-to-data time, decreasing it from days to hours while still providing precise defect and structure data.

Focused Ion Beam Analysis of Low-K Dielectrics

2000 ◽  
Author(s):  
H. J. Bender ◽  
R. A. Donaton
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Step ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Beam Analysis ◽  
Low K ◽  
Scanning Electron

Abstract The characteristics of an organic low-k dielectric during investigation by focused ion beam (FIB) are discussed for the different FIB application modes: cross-section imaging, specimen preparation for transmission electron microscopy, and via milling for device modification. It is shown that the material is more stable under the ion beam than under the electron beam in the scanning electron microscope (SEM) or in the transmission electron microscope (TEM). The milling of the material by H2O vapor assistance is strongly enhanced. Also by applying XeF2 etching an enhanced milling rate can be obtained so that both the polymer layer and the intermediate oxides can be etched in a single step.

BiCMOS Die Sort Yield Improvement from Isolation of a Localized Defect Mechanism and Precision TEM Cross Section

1997 ◽  
Author(s):  
J. Douglass ◽  
T. D. Myers ◽  
F. Tsai ◽  
R. Ketcheson ◽  
J. Errett
Keyword(s):  
Electron Microscopy ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Yield Loss ◽  
Process Analysis ◽  
Ion Beam ◽  
Yield Improvement ◽  
Transmission Electron ◽  
Defect Mechanism ◽  
Water Residue

Abstract This paper describes how the authors used a combination of focused ion beam (FIB) microprobing, transmission electron microscopy (TEM), and data and process analysis to determine that localized water residue was causing a 6% yield loss at die sort.

Site-Specific Low Angle Plasma FIB Milling for Cross-Sectional Electrical Characterization

2019 ◽  
Author(s):  
Chuan Zhang ◽  
Jane Y. Li ◽  
John Aguada ◽  
Howard Marks
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Electrical Characteristic ◽  
Preparation Method ◽  
Ion Beam ◽  
Grazing Angle ◽  
Electrical Characterization ◽  
Sample Preparation Method ◽  
Cross Sectional ◽  
Site Specific

Abstract This paper introduces a novel sample preparation method using plasma focused ion-beam (pFIB) milling at low grazing angle. Efficient and high precision preparation of site-specific cross-sectional samples with minimal alternation of device parameters can be achieved with this method. It offers the capability of acquiring a range of electrical characteristic signals from specific sites on the cross-section of devices, including imaging of junctions, Fins in the FinFETs and electrical probing of interconnect metal traces.

Physical Failure Analysis Techniques for Front-End-of-Line Defect Analysis

2016 ◽  
Author(s):  
Dirk Doyle ◽  
Lawrence Benedict ◽  
Fritz Christian Awitan
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Gate Oxide ◽  
Top Down ◽  
New Techniques ◽  
First Case ◽  
Transmission Electron ◽  
Scanning Transmission

Abstract Novel techniques to expose substrate-level defects are presented in this paper. New techniques such as inter-layer dielectric (ILD) thinning, high keV imaging, and XeF2 poly etch overflow are introduced. We describe these techniques as applied to two different defects types at FEOL. In the first case, by using ILD thinning and high keV imaging, coupled with focused ion beam (FIB) cross section and scanning transmission electron microscopy (STEM,) we were able to judge where to sample for TEM from a top down perspective while simultaneously providing the top down images giving both perspectives on the same sample. In the second case we show retention of the poly Si short after removal of CoSi2 formation on poly. Removal of the CoSi2 exposes the poly Si such that we can utilize XeF2 to remove poly without damaging gate oxide to reveal pinhole defects in the gate oxide. Overall, using these techniques have led to 1) increased chances of successfully finding the defects, 2) better characterization of the defects by having a planar view perspective and 3) reduced time in localizing defects compared to performing cross section alone.

Failure Modes, Reliability Analysis and Case Studies on the Integration of Copper and Low-K Technology

2004 ◽  
Author(s):  
Huixian Wu ◽  
James Cargo ◽  
Huixian Wu ◽  
Marvin White
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Copper Interconnects ◽  
Wet Chemical ◽  
Low K ◽  
Section Analysis

Abstract The integration of copper interconnects and low-K dielectrics will present novel failure modes and reliability issues to failure analysts. This paper discusses failure modes related to Cu/low-K technology. Here, physical failure analysis (FA) techniques including deprocessing and cross-section analysis have been developed. The deprocessing techniques include wet chemical etching, reactive ion etching, chemical mechanical polishing and a combination of these techniques. Case studies on different failure modes related to Cu/low k technology are discussed: copper voiding, copper extrusion; electromigration stress failure; dielectric cracks; delamination-interface adhesion; and FA on circuit-under-pad. For the cross-section analysis of copper/low-K samples, focused ion beam techniques have been developed. Scanning electron microscopy, EDX, and TEM analytical analysis have been used for failure analysis for Cu/low-K technology. Various failure modes and reliability issues have also been addressed.

The Application of FIB Voltage-Contrast Technique Combining with TEM on Subtle Defect Analysis: Via Delamination After TC

1997 ◽  
Author(s):  
X. Yang ◽  
X. Song
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
New Product ◽  
Defect Analysis ◽  
Transmission Electron ◽  
Contrast Technique ◽  
Defect Mechanism ◽  
Open Defect ◽  
Voltage Contrast

Abstract Novel Focused Ion Beam (FIB) voltage-contrast technique combined with TEM has been used in this study to identify a certain subtle defect mechanism that caused reliability stress failures of a new product. The suspected defect was first isolated to a unique via along the row through electrical testing and layout analysis. Static voltage contrast of FIB cross-section was used to confirm the suspected open defect at the via. Precision Transmission Electron Microscope (TEM) was then used to reveal the detail of the defect. Based on the result, proper process changes were implemented. The failure mode was successfully eliminated and the reliability of the product was greatly improved.

Recent Progress in the 3D Experimentation and Simulation of Nanoindents

2007 ◽  
Vol 550 ◽  
pp. 199-204
Author(s):  
N. Zaafarani ◽  
Franz Roters ◽  
Dierk Raabe
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Physically Based Model ◽  
Rotation Direction ◽  
Crystal Rotation ◽  
Crystal Plasticity Model ◽  
Physically Based ◽  
Set Up ◽  
Rotation Map

This work studies the rotations of a (111) Cu single crystal due to the application of a conical nanoindent. With the aid of a joint high-resolution field emission SEM-EBSD set-up coupled with serial sectioning in a focused ion beam (FIB) system in the form of a cross-beam 3D crystal orientation microscope (3D EBSD) a 3D rotation map underneath the indent could be extracted. When analyzing the rotation directions in the cross section planes (11-2) perpendicular to the (111) surface plane below the indenter tip we observe multiple transition regimes with steep orientation gradients and changes in rotation direction. A phenomenological and a physically-based 3D elastic-viscoplastic crystal plasticity model are implemented in two finite element simulations adopting the geometry and boundary conditions of the experiment. While the phenomenological model predicts the general rotation trend it fails to describe the fine details of the rotation patterning with the frequent changes in sign observed in the experiment. The physically-based model, which is a dislocation density based constitutive model, succeeded to precisely predict the crystal rotation map compared with the experiment. Both simulations over-emphasize the magnitude of the rotation field near the indenter relative to that measured directly below the indenter tip. However, out of the two models the physically-based model reveals better crystal rotation angles

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